Decreasing Beam Auto Tuning Interruption Events with In-Situ Chemical Cleaning on Axcelis GSD

2008 ◽  
Author(s):  
Dieter Fuchs ◽  
Stefan Spreitzer ◽  
Josef Vogl ◽  
Steve Bishop ◽  
David Eldridge ◽  
...  
Keyword(s):  
Chemical Cleaning ◽  
Auto Tuning

Research on in situ continuous off-line chemical cleaning in full-scale membrane bioreactors

2018 ◽  
Vol 4 ◽  
pp. 186-192 ◽  
Author(s):  
Liwei Liu ◽  
Jin Tian ◽  
Chunhui Luo ◽  
Chunsheng Chen ◽  
Jicheng Liu ◽  
...  
Keyword(s):  
Membrane Bioreactors ◽  
Full Scale ◽  
Chemical Cleaning

scholarly journals Optimization of In Situ Backwashing Frequency for Stable Operation of Anaerobic Ceramic Membrane Bioreactor

Processes ◽  
2020 ◽  
Vol 8 (5) ◽  
pp. 545 ◽  
Author(s):  
Rathmalgodage Thejani Nilusha ◽  
Tuo Wang ◽  
Hongyan Wang ◽  
Dawei Yu ◽  
Junya Zhang ◽  
...  
Keyword(s):  
Membrane Fouling ◽  
Membrane Filtration ◽  
Membrane Bioreactor ◽  
Ceramic Membrane ◽  
Pure Water ◽  
Ex Situ ◽  
Stable Operation ◽  
Chemical Cleaning ◽  
Cake Layer

The cost-effective and stable operation of an anaerobic ceramic membrane bioreactor (AnCMBR) depends on operational strategies to minimize membrane fouling. A novel strategy for backwashing, filtration and relaxation was optimized for stable operation of a side stream tubular AnCMBR treating domestic wastewater at the ambient temperature. Two in situ backwashing schemes (once a day at 60 s/day, and twice a day at 60 s × 2/day) maintaining 55 min filtration and 5 min relaxation as a constant were compared. A flux level over 70% of the initial membrane flux was stabilized by in situ permeate backwashing irrespective of its frequency. The in situ backwashing by permeate once a day was better for energy saving, stable membrane filtration and less permeate consumption. Ex situ chemical cleaning after 60 days’ operation was carried out using pure water, sodium hypochlorite (NaOCl), and citric acid as the order. The dominant cake layer was effectively reduced by in situ backwashing, and the major organic foulants were fulvic acid-like substances and humic acid-like substances. Proteobacteria, Firmucutes, Epsilonbacteria and Bacteroides were the major microbes attached to the ceramic membrane fouling layer which were effectively removed by NaOCl.

In-situ AFM study of the crystallization and pH-dependent stability of ZnO(0001)-Zn surfaces

2007 ◽  
Vol 1035 ◽  
Author(s):  
Markus Valtiner ◽  
Guido Grundmeier
Keyword(s):  
Electrolyte Solutions ◽  
Ex Situ ◽  
Chemical Cleaning ◽  
Single Crystalline ◽  
Afm Imaging ◽  
Wide Range ◽  
Wet Chemical ◽  
Ph Dependent ◽  
Crystalline Surfaces

AbstractPolar ZnO(0001)-Zn surfaces can be prepared as very well defined and single crystalline surfaces by hydroxide stabilization simply by introducing hydroxides via a wet chemical cleaning step. Within this proceeding we present an in-situ AFM imaging of the crystallization process. The pH dependent stability of the resulting hydroxide-stabilized surfaces was further investigated by means of an ex-situ LEED approach. These investigations show, that it is possible to obtain high quality single crystalline ZnO(0001)-Zn surfaces in a simple way. Moreover, these surfaces turned out to be very stable within a wide range of pH values between 11 and 3 of NaClO4 based 1mM electrolyte solutions.

Bootstrapping in-situ workflow auto-tuning via combining performance models of component applications

2021 ◽  
Author(s):  
Tong Shu ◽  
Yanfei Guo ◽  
Justin Wozniak ◽  
Xiaoning Ding ◽  
Ian Foster ◽  
...  
Keyword(s):  
Performance Models ◽  
Auto Tuning

Characterization of Epitaxial CoSi2 Films Grown on Si

1984 ◽  
Vol 41 ◽  
Author(s):  
A. H. Hamdi ◽  
M-A. Nicolet ◽  
Y. C. Kao ◽  
M. Tejwani ◽  
K. L. Wang
Keyword(s):  
High Temperature Annealing ◽  
Si Substrate ◽  
Chemical Cleaning ◽  
X Ray ◽  
Lattice Constants ◽  
Si Substrates ◽  
Preparation Techniques ◽  
Minimum Yield

AbstractX-ray rocking curves and backscattering spectrometry with channeling have been employed to investigate epitaxial CoSi2 films grown on <111> Si substrates. Several preparation techniques were used: sputter cleaning, chemical cleaning, chemical cleaning with subsequent high temperature annealing, and e-gun evaporation on a cold or hot Si substrate, in situ annealing between 550–750°C for 30 min. Best results were obtained with chemical cleaning and pre-annealing at 925°C for 10 min, Co and Si codeposition on a 580'C hot substrate. For such samples, a typical x-ray perpendicular strain is -2.08%, and parallel strain is -0.11%. This parallel strain implies that the growth has been accommodated by dislocations with a spacing of ,∼ 2000 Å. The values of strain are consistent with the published lattice constants of Si and CoSi2 and Poisson's ratio of 0.28. The minimum yield in the channeling spectra of these films is. ∼ 3.6%, which is only slightly higher than that of <111> virgin Si.

Cleaning of Silicon Surfaces for Nanotechnology

2008 ◽  
Vol 573-574 ◽  
pp. 77-117 ◽  
Author(s):  
Oliver Senftleben ◽  
Hermann Baumgärtner ◽  
Ignaz Eisele
Keyword(s):  
Surface Roughness ◽  
High Mobility ◽  
Crystal Defects ◽  
Silicon Surfaces ◽  
Ex Situ ◽  
Chemical Cleaning ◽  
Gas Atmosphere ◽  
Wet Chemical ◽  
Device Properties

An overview of various cleaning procedures for silicon surfaces is presented. Because in-situ cleaning becomes more and more important for nanotechnology the paper concentrates on physical and dry chemical techniques. As standard ex-situ wet chemical cleaning has a significant impact on surface quality und thus device properties, its influence on further processes is also considered. Oxygen and carbon are unavoidable contaminations after wet chemical treatment and therefore we discuss their in-situ removal as one of the main goals of modern silicon substrate cleaning. As surface roughness strongly influences the electrical quality of interfaces for epitaxy and dielectric growth, we concentrate on techniques, which meet this requirement. It will be shown that multi-step thermal sequences in combination with simultaneous passivation of the clean surface are necessary in order to avoid recontamination. This can be achieved not only for ultra hich vacuum but also for inert gas atmosphere. In this case the process gases have to be extremely purified and the residual partial pressure of contaminats such as oxygen and carbon has to be negligible. It will be demonstrated that 800°C is an upper limit for thermal treatment of silicon surfaces in the presence of carbon because at this temperature SiC formation in combination with a high mobility of silicon monomers leads to surface roughness. In addition mechanical stress causes dislocations and crystal defects.

Implanter Source Life and Stability Improvement Using In-Situ Chemical Cleaning

2008 ◽  
Author(s):  
Terry Romig ◽  
Doug Newman ◽  
Mike Mitchell ◽  
Kevin Ditzler ◽  
David Eldridge ◽  
...  
Keyword(s):  
Chemical Cleaning

Dry Surface Cleaning of Plasma-Etched Hemts

1992 ◽  
Vol 282 ◽  
Author(s):  
S. J. Pearton ◽  
F. Ren ◽  
A. Katz ◽  
U. K. Chakrabarti ◽  
E. Lane ◽  
...  
Keyword(s):  
Electron Cyclotron Resonance ◽  
High Electron Mobility Transistors ◽  
Surface Cleaning ◽  
High Electron ◽  
Chemical Cleaning ◽  
Electron Mobility Transistors ◽  
Short Period ◽  
Wet Chemical ◽  
Dry Etch

ABSTRACTFabrication of sub-micron high electron mobility transistors (HEMTs) involves dry etch removal of GaAs from an underlying AlGaAs or InGaAs stop layer. The etch selectivity is achieved by formation of AlF3 on AlGaAs, or InCl3 and InF3 on InGaAs, which must be removed before processing can proceed. Wet chemical cleaning has difficulty in such a situation because of surface tension effects. We have investigated use of Electron Cyclotron Resonance (ECR) H2 or Ar discharges, or hexafluoroacetylacetone (HFAC) vapor, for in-situ dry etch cleaning of HEMTs exposed to low bias BCl3/SF6 discharges. The HFAC vapor can remove most of the remnant fluorine, but is effective only when the sample is heated above ∼250°C. This relatively high temperature is not compatible with in-situ cleaning of the etched device. Low-bias(−75V) sputter cleaning with an Ar discharge removes all remnant Cl and ∼40% of the F, but dc biases above -125V are required for complete cleaning, and this ion bombardment can lead to damage in the HEMT. ECR H2 discharge exposure is effective in removing all Cl- and F-related residues in a short period (∼5 mins) with low dc biases (−25 V) on the sample.

scholarly journals Impact of in situ physical and chemical cleaning on PVDF membrane properties and performances

2015 ◽  
Vol 122 ◽  
pp. 426-435 ◽  
Author(s):  
M.F. Rabuni ◽  
N.M. Nik Sulaiman ◽  
M.K. Aroua ◽  
Ching Yern Chee ◽  
N. Awanis Hashim
Keyword(s):  
Membrane Properties ◽  
Chemical Cleaning ◽  
Pvdf Membrane ◽  
Physical And Chemical
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