Characterization of Epitaxial CoSi2 Films Grown on Si

AbstractX-ray rocking curves and backscattering spectrometry with channeling have been employed to investigate epitaxial CoSi2 films grown on <111> Si substrates. Several preparation techniques were used: sputter cleaning, chemical cleaning, chemical cleaning with subsequent high temperature annealing, and e-gun evaporation on a cold or hot Si substrate, in situ annealing between 550–750°C for 30 min. Best results were obtained with chemical cleaning and pre-annealing at 925°C for 10 min, Co and Si codeposition on a 580'C hot substrate. For such samples, a typical x-ray perpendicular strain is -2.08%, and parallel strain is -0.11%. This parallel strain implies that the growth has been accommodated by dislocations with a spacing of ,∼ 2000 Å. The values of strain are consistent with the published lattice constants of Si and CoSi2 and Poisson's ratio of 0.28. The minimum yield in the channeling spectra of these films is. ∼ 3.6%, which is only slightly higher than that of <111> virgin Si.

Download Full-text

Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

MRS Proceedings ◽

10.1557/proc-0891-ee03-14 ◽

2005 ◽

Vol 891 ◽

Author(s):

Tomohiko Takeuchi ◽

Suzuka Nishimura ◽

Tomoyuki Sakuma ◽

Satoru Matumoto ◽

Kazutaka Terashima

Keyword(s):

Epitaxial Layer ◽

Careful Analysis ◽

X Ray Diffraction ◽

Si Substrate ◽

Cross Sectional ◽

X Ray ◽

Si Substrates ◽

Impurity Doping ◽

Hall Effect Measurements

ABSTRACTBoronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2 μm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm−3(on n-Si) and 63cm2/Vs and 1.9×1019cm−3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE.

Download Full-text

Characterization of High Ge Content SiGe Heterostructures and Graded Alloy Layers Using Spectroscopic Ellipsometry

MRS Proceedings ◽

10.1557/proc-358-993 ◽

1994 ◽

Vol 358 ◽

Cited By ~ 1

Author(s):

A. R. Heyd ◽

S. A. Alterovitz ◽

E. T. Croke

Keyword(s):

Spectroscopic Ellipsometry ◽

Alloy Composition ◽

Compressive Strain ◽

Energy Shift ◽

X Ray Diffraction ◽

Si Substrate ◽

X Ray ◽

Si Substrates ◽

Graded Layers

ABSTRACTSixGe1–x heterostructures on Si substrates have been widely studied due to the maturity of Si technology. However, work on SixGe1–x heterostructures on Ge substrates has not received much attention. A SixGe1–x: layer on a Si substrate is under compressive strain while SixGe1–x on Ge is under tensile strain; thus the critical points will behave differently. In order to accurately characterize high Ge content SixGe1–x layers the energy shift algorithm, which is used to calculate alloy compositions, has been modified. These results have been used along with variable angle spectroscopic ellipsometry (VASE) measurements to characterize SixGe1–x/Ge superlattices grown on Ge substrates. The results are found to agree closely with high resolution x-ray diffraction measurements made on the same samples.The modified energy shift algorithm also allows the VASE analysis to be upgraded in order to characterize linearly graded layers. In this work VASE has been used to characterize graded SixGe1–x layers in terms of the total thickness, and the start and end alloy composition. Results are presented for a 1 µm SixGe1–x layer linearly graded in the range 0.5 ≤ x ≤ 1.0.

Download Full-text

Characterization of Single-Crystal 3C-SIC Epitaxial Layers on SI Substrates

MRS Proceedings ◽

10.1557/proc-535-107 ◽

1998 ◽

Vol 535 ◽

Cited By ~ 5

Author(s):

S. E. Saddow ◽

M. E. Okhusyen ◽

M. S. Mazzola ◽

M. Dudley ◽

X. R. Huang ◽

...

Keyword(s):

Crystal Structure ◽

Cross Section ◽

Epitaxial Layers ◽

Si Substrate ◽

Strain Fields ◽

X Ray ◽

Si Substrates ◽

Sic Film

AbstractIn this paper we discuss the growth and characterization of 3C-SiC epitaxial layers grown on both a Si substrate as well as on a novel substrate. The growth uses a typical three step process. First an etch of the Si surface is performed, second the surface of the Si is carbonized and third 3C-SiC is grown on the carbonized surface. Several characterization techniques were used to verify the quality of the 3C-SiC film. Microscopy was used to investigate the surface morphology, X-ray and electron diffraction were used to determine crystal structure, cross section TEM was used to verify crystal structure and highlight twinning, and x-ray topography was used to measure the strain fields induced in Si substrate at the 3C-SiC/Si interface.

Download Full-text

The Use of Advanced Analytical Techniques for Characterization of the Chemical, Physical, and Crystallographic Nature of a Surface

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100071107 ◽

1973 ◽

Vol 31 ◽

pp. 132-133 ◽

Cited By ~ 1

Author(s):

R. E. Herfert

Keyword(s):

Surface Characterization ◽

Analytical Techniques ◽

X Ray Diffraction ◽

Depth Of Penetration ◽

X Ray ◽

The Past ◽

Transmission Electron ◽

Scanning Electron

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.

Download Full-text

In-situ characterization of highly reversible phase transformation by synchrotron X-ray Laue microdiffraction

Applied Physics Letters ◽

10.1063/1.4951001 ◽

2016 ◽

Vol 108 (21) ◽

pp. 211902 ◽

Cited By ~ 8

Author(s):

Xian Chen ◽

Nobumichi Tamura ◽

Alastair MacDowell ◽

Richard D. James

Keyword(s):

Phase Transformation ◽

In Situ Characterization ◽

X Ray ◽

Reversible Phase ◽

Laue Microdiffraction

Download Full-text

Structural Characterization of Heterodinuclear ZnII-LnIII Complexes (Ln = Pr, Nd) with a Ring-Contracted H2valdien-Derived Schiff Base Ligand

Journal of Chemical Crystallography ◽

10.1007/s10870-021-00891-4 ◽

2021 ◽

Author(s):

Shabana Noor ◽

Richard Goddard ◽

Fehmeeda Khatoon ◽

Sarvendra Kumar ◽

Rüdiger W. Seidel

Keyword(s):

Molecular Structure ◽

Schiff Base ◽

Structural Characterization ◽

Schiff Base Ligand ◽

Crystal And Molecular Structure ◽

X Ray ◽

X Ray Crystallography ◽

Imidazoline Ring

AbstractSynthesis and structural characterization of two heterodinuclear ZnII-LnIII complexes with the formula [ZnLn(HL)(µ-OAc)(NO3)2(H2O)x(MeOH)1-x]NO3 · n H2O · n MeOH [Ln = Pr (1), Nd (2)] and the crystal and molecular structure of [ZnNd(HL)(µ-OAc)(NO3)2(H2O)] [ZnNd(HL)(OAc)(NO3)2(H2O)](NO3)2 · n H2O · n MeOH (3) are reported. The asymmetrical compartmental ligand (E)-2-(1-(2-((2-hydroxy-3-methoxybenzylidene)amino)-ethyl)imidazolidin-2-yl)-6-methoxyphenol (H2L) is formed from N1,N3-bis(3-methoxysalicylidene)diethylenetriamine (H2valdien) through intramolecular aminal formation, resulting in a peripheral imidazoline ring. The structures of 1–3 were revealed by X-ray crystallography. The smaller ZnII ion occupies the inner N2O2 compartment of the ligand, whereas the larger and more oxophilic LnIII ions are found in the outer O2O2’ site. Graphic Abstract Synthesis and structural characterization of two heterodinuclear ZnII-LnIII complexes (Ln = Pr, Nd) bearing an asymmetrical compartmental ligand formed in situ from N1,N3-bis(3-methoxysalicylidene)diethylenetriamine (H2valdien) through intramolecular aminal formation are reported.

Download Full-text

In situsmall-angle X-ray scattering characterization of X-ray-induced local heating

Journal of Applied Crystallography ◽

10.1107/s1600576714020159 ◽

2014 ◽

Vol 47 (6) ◽

pp. 2078-2080 ◽

Cited By ~ 4

Author(s):

Monika Witala ◽

Jun Han ◽

Andreas Menzel ◽

Kim Nygård

Keyword(s):

Local Heating ◽

Liquid Mixtures ◽

Glass Capillary ◽

Sample Container ◽

X Ray ◽

X Ray Scattering ◽

Synchrotron Light ◽

Ray Scattering

It is shown that small-angle X-ray scattering from binary liquid mixtures close to the critical point of demixing can be used forin situcharacterization of beam-induced heating of liquid samples. For demonstration purposes, the proposed approach is applied on a well studied critical mixture of water and 2,6-lutidine. Given a typical incident X-ray flux at a third-generation synchrotron light source and using a 1.5 mm-diameter glass capillary as sample container, a beam-induced local temperature increase of 0.45 ± 0.10 K is observed.

Download Full-text

Anin situatomic force microscope for normal-incidence nanofocus X-ray experiments

Journal of Synchrotron Radiation ◽

10.1107/s1600577516011437 ◽

2016 ◽

Vol 23 (5) ◽

pp. 1110-1117 ◽

Cited By ~ 3

Author(s):

M. V. Vitorino ◽

Y. Fuchs ◽

T. Dane ◽

M. S. Rodrigues ◽

M. Rosenthal ◽

...

Keyword(s):

Thin Film ◽

Atomic Force Microscope ◽

High Speed ◽

Normal Incidence ◽

Organic Thin Film ◽

X Ray ◽

Atomic Force ◽

Synchrotron Beamlines

A compact high-speed X-ray atomic force microscope has been developed forin situuse in normal-incidence X-ray experiments on synchrotron beamlines, allowing for simultaneous characterization of samples in direct space with nanometric lateral resolution while employing nanofocused X-ray beams. In the present work the instrument is used to observe radiation damage effects produced by an intense X-ray nanobeam on a semiconducting organic thin film. The formation of micrometric holes induced by the beam occurring on a timescale of seconds is characterized.

Download Full-text

Surface Reactions of Metal Catalysts for Carbon Nanotubes on an Oxide Thin Layer/Si Substrates Studied by in-situ Micro X-ray Adsorption Spectroscopy using SPELEEM

MRS Proceedings ◽

10.1557/proc-0967-u05-03 ◽

2006 ◽

Vol 967 ◽

Author(s):

Fumihiko Maeda ◽

Hiroki Hibino ◽

Satoru Suzuki ◽

FangZhun Guo ◽

Yoshio Watanabe

Keyword(s):

Electron Microscopy ◽

Oxide Layer ◽

X Ray ◽

Si Substrates ◽

Microscopy Image ◽

Special Surface ◽

Void Area ◽

Low Energy Electron ◽

Photoemission Electron

ABSTRACTTo clarify the reaction process of Co and Fe with a oxide layer on Si substrates, the annealing processes were analyzed using spectroscopic photoemission and low-energy electron microscopy for a special surface where oxide areas and clean substrate areas (voids) coexist closely in a micrometer-order view. From analyses of XAS spectra and edge jump ratios obtained from the photoemission electron microscopy image, we clarified that Co atoms in the void area remain because of the formation of silicides, but that those on the oxide layer disappear because metallic Co atoms easily diffuse. In contrast, in the case of Fe, we found the formation of various silicides and their gradual diffusion into Si substrate even in the form of silicides.

Download Full-text