Crucial integration of high work-function metal gate and high-k blocking oxide on charge-trapping type flash memory device

2008 ◽  
Vol 93 (25) ◽  
pp. 252902 ◽  
Author(s):  
Ping-Hung Tsai ◽  
Kuei-Shu Chang-Liao ◽  
Dong-Wei Yang ◽  
Yuan-Bin Chung ◽  
Tien-Ko Wang ◽  
...  
Keyword(s):  
Work Function ◽  
Flash Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Metal Gate ◽  
High Work Function ◽  
High K ◽  
High Work

scholarly journals Nb2O5 and Ti-Doped Nb2O5 Charge Trapping Nano-Layers Applied in Flash Memory

Nanomaterials ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 799 ◽  
Author(s):  
Jer Wang ◽  
Chyuan Kao ◽  
Chien Wu ◽  
Chun Lin ◽  
Chih Lin
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Dielectric Constants ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Hysteresis Curve ◽  
Band Shift ◽  
K Value ◽  
High K

High-k material charge trapping nano-layers in flash memory applications have faster program/erase speeds and better data retention because of larger conduction band offsets and higher dielectric constants. In addition, Ti-doped high-k materials can improve memory device performance, such as leakage current reduction, k-value enhancement, and breakdown voltage increase. In this study, the structural and electrical properties of different annealing temperatures on the Nb2O5 and Ti-doped Nb2O5(TiNb2O7) materials used as charge-trapping nano-layers in metal-oxide-high k-oxide-semiconductor (MOHOS)-type memory were investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM). Analysis of the C-V hysteresis curve shows that the flat-band shift (∆VFB) window of the TiNb2O7 charge-trapping nano-layer in a memory device can reach as high as 6.06 V. The larger memory window of the TiNb2O7 nano-layer is because of a better electrical and structural performance, compared to the Nb2O5 nano-layer.

High work function metal gate and reliability improvement for MOS device by integration of TiN/MoN and HfAlO dielectric

2010 ◽  
Vol 54 (10) ◽  
pp. 1160-1165 ◽  
Author(s):  
Chung-Hao Fu ◽  
Kuei-Shu Chang-Liao ◽  
Hsueh-Yueh Lu ◽  
Chen-Chien Li ◽  
Tien-Ko Wang
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
High Work Function ◽  
Reliability Improvement ◽  
High Work ◽  
Mos Device
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