Simultaneous measurement of substrate temperature and thin-film thickness on SiO2/Si wafer using optical-fiber-type low-coherence interferometry

2009 ◽  
Vol 105 (1) ◽  
pp. 013110 ◽  
Author(s):  
Takayuki Ohta ◽  
Chishio Koshimizu ◽  
Kanta Kawasaki ◽  
Keigo Takeda ◽  
Masafumi Ito
Keyword(s):  
Thin Film ◽  
Optical Fiber ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Simultaneous Measurement ◽  
Fiber Type ◽  
Thin Film Thickness ◽  
Low Coherence ◽  
Low Coherence Interferometry ◽  
Si Wafer

Simultaneous measurement of dynamic force and spatial thin film thickness between deformable and solid surfaces by integrated thin liquid film force apparatus

Soft Matter ◽  
2016 ◽  
Vol 12 (44) ◽  
pp. 9105-9114 ◽  
Author(s):  
Xurui Zhang ◽  
Plamen Tchoukov ◽  
Rogerio Manica ◽  
Louxiang Wang ◽  
Qingxia Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Liquid Film ◽  
Simultaneous Measurement ◽  
Thin Liquid Film ◽  
Solid Surfaces ◽  
Dynamic Force ◽  
Thin Film Thickness

Temperature Measurement of Si Substrate Using Optical-Fiber-Type Low-Coherence Interferometry Employing Supercontinuum Light

2013 ◽  
Vol 52 (2R) ◽  
pp. 026602 ◽  
Author(s):  
Takehiro Hiraoka ◽  
Takayuki Ohta ◽  
Tetsunori Kageyama ◽  
Masafumi Ito ◽  
Norihiko Nishizawa ◽  
...  
Keyword(s):  
Optical Fiber ◽  
Temperature Measurement ◽  
Fiber Type ◽  
Si Substrate ◽  
Low Coherence ◽  
Low Coherence Interferometry

Fiber-optics Low-coherence Integrated Metrology for In-Situ Non-contact Characterization of Wafer Curvature for Wafers Having Non-uniform Substrate and Thin Film Thickness

2005 ◽  
Vol 875 ◽  
Author(s):  
Wojciech J. Walecki ◽  
Alexander Pravdivtsev ◽  
Kevin Lai ◽  
Manuel Santos ◽  
Georgy Mikhaylov ◽  
...  
Keyword(s):  
Thin Film ◽  
Construction Industry ◽  
Fiber Optics ◽  
Fiber Optic ◽  
Flat Panel ◽  
Thin Film Thickness ◽  
Low Coherence ◽  
Low Coherence Interferometry

Abstract. We propose novel stress metrology technique for measurement of local values stress tensor components in the coated wafers. New metrology is based on fiber-optic low coherence interferometry and can be applied to study stress not only in semicondiuctor wafers but in wide variety applications spanning from semiconductor to construction industry where measurements of plates covered by thin film encountered in flat panel displayes, solar cells, modern windows.

Thin-film thickness profile measurement using a Mirau-type low-coherence interferometer

2013 ◽  
Vol 24 (7) ◽  
pp. 075002 ◽  
Author(s):  
Young-Sik Ghim ◽  
Hyug-Gyo Rhee ◽  
Ho-Soon Yang ◽  
Yun-Woo Lee
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Profile Measurement ◽  
Thin Film Thickness ◽  
Low Coherence ◽  
Thickness Profile

In-situ simultaneous measurement of temperature and thin film thickness with ultrasonic techniques

1996 ◽  
Author(s):  
Butrus T. Khuri-Yakub ◽  
Jun Pei ◽  
F. Levent Degertekin ◽  
Krishna C. Saraswat
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Simultaneous Measurement ◽  
Thin Film Thickness ◽  
Ultrasonic Techniques

Temperature-Measurement System Using Optical Fiber-Type Low-Coherence Interferometry for MultiLayered Substrate

2004 ◽  
Vol 43 (11A) ◽  
pp. 7737-7741 ◽  
Author(s):  
Keigo Takeda ◽  
Yutaka Tomekawa ◽  
Tatsuo Shiina ◽  
Masafumi Ito ◽  
Yasuyuki Okamura ◽  
...  
Keyword(s):  
Optical Fiber ◽  
Temperature Measurement ◽  
Measurement System ◽  
Fiber Type ◽  
Low Coherence ◽  
Low Coherence Interferometry ◽  
Temperature Measurement System

Improved Optical Model for SiO2/Si Ultra-Thin Film Thickness Determination by Spectroscopic Ellipsometry

2014 ◽  
Vol 915-916 ◽  
pp. 803-807
Author(s):  
Jiang Wei Fan ◽  
Qin Lei Sun ◽  
Mei Quan Liu
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Optical Model ◽  
Traditional Model ◽  
Thin Film Thickness ◽  
Theoretical Simulation ◽  
Improved Model ◽  
Si Thin Film ◽  
Si Wafer ◽  
Ultra Thin Film

Different optical models were adopted to fit theoretical simulation curves of a SiO2 ultra-thin film with a density of 2.2 g/cm3 and a thickness of 6nm grown on Si wafer. The results indicate that thickness obtained from fitting decrease linearly with increase of film density. An improved optical model (density of thin film of 2.4g/cm3, roughness of surface of 0.4nm, roughness of surface of 0.3nm) was obtained according to the above analysis and the GIXRR results of our previous work. The improved model could give more accurate thickness value of ultrathin film with thickness less than 10nm. It was employed in the thickness fitting for thermal oxidized SiO2/Si thin film with nominal thicknesses of 2, 4, 6, 8 and 10nm. The results were 2.61, 4.07, 6.02, 7.41 and 9.43nm, decreased by 13.8%10.3%8.1%7.3% and 6.6%, respectively, compared with the results calculated from the traditional model.

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