Fiber-optics Low-coherence Integrated Metrology for In-Situ Non-contact Characterization of Wafer Curvature for Wafers Having Non-uniform Substrate and Thin Film Thickness

2005 ◽  
Vol 875 ◽  
Author(s):  
Wojciech J. Walecki ◽  
Alexander Pravdivtsev ◽  
Kevin Lai ◽  
Manuel Santos ◽  
Georgy Mikhaylov ◽  
...  

Abstract. We propose novel stress metrology technique for measurement of local values stress tensor components in the coated wafers. New metrology is based on fiber-optic low coherence interferometry and can be applied to study stress not only in semicondiuctor wafers but in wide variety applications spanning from semiconductor to construction industry where measurements of plates covered by thin film encountered in flat panel displayes, solar cells, modern windows.

Author(s):  
Silvia Fabiani ◽  
Marco Farina ◽  
Andrea Di Donato ◽  
Agnese Lucesoli ◽  
Tullio Rozzi

2016 ◽  
Vol 23 (5) ◽  
pp. 1110-1117 ◽  
Author(s):  
M. V. Vitorino ◽  
Y. Fuchs ◽  
T. Dane ◽  
M. S. Rodrigues ◽  
M. Rosenthal ◽  
...  

A compact high-speed X-ray atomic force microscope has been developed forin situuse in normal-incidence X-ray experiments on synchrotron beamlines, allowing for simultaneous characterization of samples in direct space with nanometric lateral resolution while employing nanofocused X-ray beams. In the present work the instrument is used to observe radiation damage effects produced by an intense X-ray nanobeam on a semiconducting organic thin film. The formation of micrometric holes induced by the beam occurring on a timescale of seconds is characterized.


2018 ◽  
Vol 411 ◽  
pp. 27-32 ◽  
Author(s):  
Y. Liu ◽  
R. Strum ◽  
D. Stiles ◽  
C. Long ◽  
A. Rakhman ◽  
...  

2004 ◽  
Vol 19 (6) ◽  
pp. 1762-1767
Author(s):  
Nicholas W. Botterill ◽  
David M. Grant ◽  
Jianxin Zhang ◽  
Clive J. Roberts

A novel approach in determining the transition temperatures of NiTi shape memory alloys was investigated and compared with conventional techniques. The technique is based on microthemal analysis using a scanning thermal microscope (SThM). In particular, this method has the potential to allow the transformation temperatures of thin films to be investigated in situ. Thin film shape memory alloys have potential applications, such as microactuators, where conventional analysis techniques are either not directly applicable to such samples or are difficult to perform.


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