SimultaneousIn situMeasurement of Silicon Substrate Temperature and Silicon Dioxide Film Thickness during Plasma Etching of Silicon Dioxide Using Low-Coherence Interferometry

A versatile fabrication process that allows users to quickly construct micromachined structures using a one metal, one silicon dioxide film stack on a silicon wafer is presented. This simplified process, which we have labeled Mock CMOS or M-CMOS, (a) starts from pre-processed wafers and requires only one photolithography step, (b) provides a conductor material for actuating electrostatic and thermal devices, (c) avoids electrical shorting between metal microstructures or to the silicon substrate by using silicon dioxide as an insulator, and (d) allows quick prototyping of true CMOS-MEMS structures similar to those designed at Carnegie Mellon University (CMU). Devices successfully microfabricated with M-CMOS include surface-normal and lateral electrostatic and thermal actuators, the majority of which were designed by forty students in an Introduction to MEMS course in Fall 2001 at Carnegie Mellon University.

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Ion Beam Alignment Procedures using a Faraday Cup or a Silicon Dioxide Film on Silicon Substrate with Auger Electron Microscope

Journal of Surface Analysis ◽

10.1384/jsa.14.124 ◽

2007 ◽

Vol 14 (2) ◽

pp. 124-130

Author(s):

N. Urushihara ◽

N. Sanada ◽

D. Paul ◽

M. Suzuki

Keyword(s):

Electron Microscope ◽

Silicon Dioxide ◽

Silicon Substrate ◽

Auger Electron ◽

Ion Beam ◽

Silicon Dioxide Film ◽

Faraday Cup ◽

Dioxide Film

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Residual Stress Measurement in Silicon Substrate After Local Thermal Oxidation Using Microscopic Raman Spectroscopy

MRS Proceedings ◽

10.1557/proc-226-345 ◽

1991 ◽

Vol 226 ◽

Cited By ~ 3

Author(s):

Hideo Miura ◽

Hiroshi Sakata ◽

Shinji Sakata Merl

Keyword(s):

Residual Stress ◽

Raman Spectroscopy ◽

Tensile Stress ◽

Oxide Film ◽

Film Thickness ◽

Silicon Dioxide ◽

Thermal Oxidation ◽

Silicon Substrate ◽

Nitride Film ◽

Oxide Film Thickness

AbstractThe residual stress in silicon substrates after local thermal oxidation is discussed experimentally using microscopic Raman spectroscopy. The stress distribution in the silicon substrate is determined by three main factors: volume expansion of newly grown silicon–dioxide, deflection of the silicon–nitride film used as an oxidation barrier, and mismatch in thermal expansion coefficients between silicon and silicon dioxide.Tensile stress increases with the increase of oxide film thickness near the surface of the silicon substrate under the oxide film without nitride film on it. The tensile stress is sometimes more than 100 MPa. On the other hand, a complicated stress change is observed near the surface of the silicon substrate under the nitride film. The tensile stress increases initially, as it does in the area without nitride film on it. However, it decreases with the increase of oxide film thickness, then the compressive stress increases in the area up to 170 MPa. This stress change is explained by considering the drastic structural change of the oxide film under the nitride film edge during oxidation.

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