Strain measured in a silicon-on-insulator, complementary metal-oxide-semiconductor device channel induced by embedded silicon-carbon source/drain regions

Applied Physics Letters ◽

10.1063/1.3079656 ◽

2009 ◽

Vol 94 (6) ◽

pp. 063502 ◽

Author(s):

Conal E. Murray ◽

Z. Ren ◽

A. Ying ◽

S. M. Polvino ◽

I. C. Noyan ◽

...

Keyword(s):

Carbon Source ◽

Metal Oxide ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

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Heterogeneous integration and precise alignment of InP-based photonic crystal lasers to complementary metal-oxide semiconductor fabricated silicon-on-insulator wire waveguides

Journal of Applied Physics ◽

10.1063/1.3319667 ◽

2010 ◽

Vol 107 (6) ◽

pp. 063103 ◽

Author(s):

T. J. Karle ◽

Y. Halioua ◽

F. Raineri ◽

P. Monnier ◽

R. Braive ◽

...

Keyword(s):

Photonic Crystal ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Heterogeneous Integration

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Protecting against electrostatic discharge (ESD) in complementary metal oxide semiconductor (CMOS) integrated circuits (ICs) manufactured using silicon-on-insulator (SOI) technology

Silicon-On-Insulator (SOI) Technology ◽

10.1533/9780857099259.1.243 ◽

2014 ◽

pp. 243-271

Author(s):

M.G. Khazhinsky

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Electrostatic Discharge ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Cmos Integrated Circuits ◽

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Silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) circuits for ultralow power (ULP) applications

Silicon-On-Insulator (SOI) Technology ◽

10.1533/9780857099259.2.318 ◽

2014 ◽

pp. 318-357

Author(s):

N. Sugii

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Cmos Circuits ◽

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Evaluation and Resolution for Nonideal Characteristics of Complementary Metal–Oxide–Semiconductor Devices Fabricated on Silicon-on-Insulator

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.4408 ◽

2008 ◽

Vol 47 (6) ◽

pp. 4408-4412

Author(s):

Seongjae Cho ◽

Il Han Park ◽

Jung Hoon Lee ◽

Jong Duk Lee ◽

Byung-Gook Park

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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Epitaxial Gd2O3 on strained Si1−xGex layers for next generation complementary metal oxide semiconductor device application

Applied Physics Letters ◽

10.1063/1.4824422 ◽

2013 ◽

Vol 103 (15) ◽

pp. 153501 ◽

Author(s):

Kankat Ghosh ◽

Sudipta Das ◽

A. Fissel ◽

H. J. Osten ◽

Apurba Laha

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Next Generation ◽

Device Application

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Polarization-Independent Photodetectors With Enhanced Responsivity in a Standard Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Process

Journal of Lightwave Technology ◽

10.1109/jlt.2009.2030343 ◽

2009 ◽

Vol 27 (21) ◽

pp. 4892-4896 ◽

Author(s):

N. Moll ◽

T. Morf ◽

M. Fertig ◽

T. Stoferle ◽

B. Trauter ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Polarization Independent ◽

Semiconductor Process

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Integrated Active Magnetic Probe in Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.6878 ◽

2006 ◽

Vol 45 (9A) ◽

pp. 6878-6883

Author(s):

Satoshi Aoyama ◽

Shoji Kawahito ◽

Masahiro Yamaguchi

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Magnetic Probe ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Semiconductor Technology

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A silicon-on-insulator complementary-metal-oxide-semiconductor compatible flexible electronics technology

Applied Physics Letters ◽

10.1063/1.4739937 ◽

2012 ◽

Vol 101 (5) ◽

pp. 052106 ◽

Author(s):

Hongen Tu ◽

Yong Xu

Keyword(s):

Metal Oxide ◽

Flexible Electronics ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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Single event transients in a 0.18 m partially-depleted silicon-on-insulator complementary metal oxide semiconductor circuit

Acta Physica Sinica ◽

10.7498/aps.64.136102 ◽

2015 ◽

Vol 64 (13) ◽

pp. 136102

Author(s):

Zhao Xing ◽

Mei Bo ◽

Bi Jin-Shun ◽

Zheng Zhong-Shan ◽

Gao Lin-Chun ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Single Event ◽

Single Event Transients

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Demonstration of Y1Ba2Cu3O7−δand complementary metal‐oxide‐semiconductor device fabrication on the same sapphire substrate

Applied Physics Letters ◽

10.1063/1.109758 ◽

1993 ◽

Vol 63 (9) ◽

pp. 1282-1284 ◽

Author(s):

M. J. Burns ◽

P. R. de la Houssaye ◽

S. D. Russell ◽

G. A. Garcia ◽

S. R. Clayton ◽

...

Keyword(s):

Metal Oxide ◽

Sapphire Substrate ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Device Fabrication ◽

Oxide Semiconductor

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