Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect

2009 ◽  
Vol 94 (17) ◽  
pp. 171117 ◽  
Author(s):  
Z. Chen ◽  
Y. Pei ◽  
S. Newman ◽  
D. Brown ◽  
R. Chung ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Double Heterojunction ◽  
Heterojunction Field Effect Transistors

Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors

2008 ◽  
Vol 600-603 ◽  
pp. 1329-1332
Author(s):  
Mitsuaki Shimizu ◽  
Masaki Inada ◽  
Shuichi Yagi ◽  
Akira Nakajima ◽  
Hajime Okumura ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Current Collapse ◽  
Double Heterojunction ◽  
Heterojunction Field Effect Transistors

The current collapse of normally-off mode AlGaN/GaN/AlGaN double heterojunction field effect transistors was investigated in comparison with the normal AlGaN/GaN heterojunction filed effect transistors.

Normally-off operation in AlGaN/GaN/AlGaN double heterojunction field effect transistors

2007 ◽  
Vol 4 (7) ◽  
pp. 2674-2677
Author(s):  
Mitsuaki Shimizu ◽  
Masaki Inada ◽  
Shuichi Yagi ◽  
Guanxi Piao ◽  
Hajime Okumura ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Double Heterojunction ◽  
Heterojunction Field Effect Transistors

scholarly journals Polythiophene–perylene diimide heterojunction field-effect transistors

2013 ◽  
Vol 1 (13) ◽  
pp. 2433 ◽  
Author(s):  
Sreenivasa Reddy Puniredd ◽  
Adam Kiersnowski ◽  
Glauco Battagliarin ◽  
Wojciech Zajączkowski ◽  
Wallace W. H. Wong ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Perylene Diimide ◽  
Heterojunction Field Effect Transistors

SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

2018 ◽  
Vol 57 (6S3) ◽  
pp. 06KA03
Author(s):  
Kenta Watanabe ◽  
Daiki Terashima ◽  
Mikito Nozaki ◽  
Takahiro Yamada ◽  
Satoshi Nakazawa ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Heterojunction Field Effect Transistors

scholarly journals Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: Effects of field and temperature

2013 ◽  
Vol 103 (16) ◽  
pp. 163504 ◽  
Author(s):  
C. Y. Zhu ◽  
F. Zhang ◽  
R. A. Ferreyra ◽  
V. Avrutin ◽  
Ü. Özgür ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Stress Effects ◽  
Electrical Stress ◽  
Heterojunction Field Effect Transistors
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