Reverse current-voltage characteristics of indium tin oxide/silicon solar cells under illumination

1980 ◽  
Vol 51 (4) ◽  
pp. 2164 ◽  
Author(s):  
P. Smith ◽  
R. Singh ◽  
J. DuBow
Keyword(s):  
Solar Cells ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Reverse Current ◽  
Silicon Solar Cells ◽  
Current Voltage ◽  
Current Voltage Characteristics

Influence of copper contamination on the illuminated forward and dark reverse current-voltage characteristics of multicrystalline p-type silicon solar cells

2014 ◽  
Vol 11 (11-12) ◽  
pp. 1697-1702 ◽  
Author(s):  
Tleuzhan Turmagambetov ◽  
Sébastien Dubois ◽  
Jean-Paul Garandet ◽  
Benoit Martel ◽  
Nicolas Enjalbert ◽  
...  
Keyword(s):  
Solar Cells ◽  
Reverse Current ◽  
Silicon Solar Cells ◽  
Copper Contamination ◽  
Type Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

scholarly journals Transparent p-n Heterojunction Thin Film Diodes

2001 ◽  
Vol 666 ◽  
Author(s):  
M. K. Jayaraj ◽  
A. D. Draeseke ◽  
J. Tate ◽  
R. L. Hoffman ◽  
J. F. Wager
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Interfacial Layer ◽  
Optical Transmission ◽  
Visible Region ◽  
Reverse Current ◽  
Total Thickness ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Diode Current

ABSTRACTTransparent p-n heterojunction diodes are fabricated using p-type CuYO2:Ca and n-type ZnO:Al thin films on a glass substrate coated with indium-tin oxide (ITO). The contact between the n-ZnO:Al / p-CuYO2:Ca heterojunction is found to be rectifying, while the ITO / ZnO:Al contact is ohmic. The typical ratio of forward to reverse current is 15 in the range -3 to 3V. The diode current-voltage characteristics are dominated by the flow of space charge limited current, which is ascribed to the existence of an insulating ZnO interfacial layer. The diode structure has a total thickness of 0.85 μm and an optical transmission of 40%-50% in the visible region.

Contact fault characterisation of complex silicon solar cells: a guideline based on current voltage characteristics and luminescence imaging

2015 ◽  
Vol 24 (3) ◽  
pp. 326-339 ◽  
Author(s):  
Milan Padilla ◽  
Christian Reichel ◽  
Nikolaus Hagedorn ◽  
Andreas Fell ◽  
Roman Keding ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Luminescence Imaging ◽  
Current Voltage ◽  
Current Voltage Characteristics

ITO-free carrier-selective contact for crystalline silicon solar cells

2019 ◽  
Vol 7 (5) ◽  
pp. 2192-2199 ◽  
Author(s):  
Deokjae Choi ◽  
Hyun Yoon ◽  
Ka-Hyun Kim ◽  
Han-Don Um ◽  
Kwanyong Seo
Keyword(s):  
Solar Cells ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Crystalline Silicon ◽  
Free Carrier ◽  
Silicon Solar Cells ◽  
Grid Electrode ◽  
Crystalline Silicon Solar Cells ◽  
Micro Grid

Indium Tin Oxide (ITO)-free carrier-selective contact for crystalline silicon solar cells is developed by the integration of a micro-grid electrode.

scholarly journals Enhanced angular characteristics of indium tin oxide nanowhisker-coated silicon solar cells

2011 ◽  
Vol 19 (S3) ◽  
pp. A219 ◽  
Author(s):  
Chia-Hua Chang ◽  
Min-Hsiang Hsu ◽  
Ping-Cheng Tseng ◽  
Peichen Yu ◽  
Wei-Lun Chang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Silicon Solar Cells

Influence of Nickel Film Thicknesses on Dark Current-Voltage Characteristics of Silicon Solar Cells

2011 ◽  
Vol 694 ◽  
pp. 672-675
Author(s):  
Tao Li ◽  
Chun Lan Zhou ◽  
Zhen Gang Liu ◽  
Wen Jing Wang ◽  
Yang Song ◽  
...  
Keyword(s):  
Solar Cells ◽  
Dark Current ◽  
Nickel Silicide ◽  
Nickel Film ◽  
Silicon Solar Cells ◽  
Voltage Range ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Current Voltage Characteristics

In this paper, the dark current-voltage characteristics of p-n junction of silicon solar cells are analysed, with different nickel film thicknesses of 200nm, 400nm and 600nm. The formation of nickel silicide is obtained after the thermal annealing process for 1min, 5min and 10min. The dark current-voltage curves obtained by three kinds of annealing temperature as a function of time are achieved in experiment. The improvement of series resistance extracted from the dark current-voltage curve in the upper voltage range is observed. The influence of nickel film thicknesses on dark current-voltage characteristics of silicon solar cells is confirmed.

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