scholarly journals Transparent p-n Heterojunction Thin Film Diodes

2001 ◽  
Vol 666 ◽  
Author(s):  
M. K. Jayaraj ◽  
A. D. Draeseke ◽  
J. Tate ◽  
R. L. Hoffman ◽  
J. F. Wager
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Interfacial Layer ◽  
Optical Transmission ◽  
Visible Region ◽  
Reverse Current ◽  
Total Thickness ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Diode Current

ABSTRACTTransparent p-n heterojunction diodes are fabricated using p-type CuYO2:Ca and n-type ZnO:Al thin films on a glass substrate coated with indium-tin oxide (ITO). The contact between the n-ZnO:Al / p-CuYO2:Ca heterojunction is found to be rectifying, while the ITO / ZnO:Al contact is ohmic. The typical ratio of forward to reverse current is 15 in the range -3 to 3V. The diode current-voltage characteristics are dominated by the flow of space charge limited current, which is ascribed to the existence of an insulating ZnO interfacial layer. The diode structure has a total thickness of 0.85 μm and an optical transmission of 40%-50% in the visible region.

scholarly journals Silicon carbide of 4H-SiC type Schottky diode current-voltage characteristics in small-sized type metal-polymeric package SOT-89

2021 ◽  
Vol 2086 (1) ◽  
pp. 012065
Author(s):  
S V Sedykh ◽  
S B Rybalka ◽  
A A Demidov ◽  
E A Kulchenkov
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Barrier Height ◽  
Reverse Current ◽  
Forward Direction ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Ideal Diode ◽  
Diode Current ◽  
The Ideal

Abstract The forward and reverse current–voltage characteristics of Ti/Al/4H-SiC Schottky diode type DDSH411A91 in modern small-sized (SOT-89) type metal-polymeric package have been obtained. In forward direction (current up to 2 A) on the basis of analysis it is shown that Schottky diode corresponds to the "ideal" diode with ideality factor n=1.12 and effective Schottky barrier height φB =1.2 eV. It is shown that reverse current-voltage characteristics (breakdown voltage 1200 V) can be well approximated by mechanism of field dependence of barrier height lowering by the presence of the intermediate layer in the form of oxide on the 4H-SiC surface.

scholarly journals Wavelength dependent photosensitivity modulation of Aluminium/Lead sulphide/Indium tin oxide back-to-back diode

2020 ◽  
Vol 22 ◽  
pp. 1-7
Author(s):  
Abhijit Banerjee ◽  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Electronic Devices ◽  
Lead Sulphide ◽  
Carrier Generation ◽  
Current Voltage ◽  
Photo Sensor ◽  
Capacitance Voltage ◽  
Definite Improvement ◽  
Current Voltage Characteristics

The photosensitivity of aluminium (Al)/lead sulphide (PbS)/indium tin oxide (ITO) thin layered structure is investigated considering the photon wavelength dependent current-voltage and capacitance-voltage characteristics of the device. The current-voltage characteristics of the test structure are analyzed adopting the back-to-back Schottky barrier diode model. The diode possesses low dark current in contrast to the high value of photocurrents measured under different illumination wavelengths. The change in photocurrents with different illumination wavelengths clearly indicates the change in photo-sensitivity of the device. The capacitance-voltage characteristics of Al/PbS/ITO structure demonstrate a definite improvement of the device capacitance with the higher wavelength exposures. The matter is explained in terms of the additional capacitance owing to the excess carrier generation within the device under illumination. The photosensitivity modulation of the device can be exploited in photo-sensor or photo-detector applications in various electronic devices.

scholarly journals Arrayed CdTeMicrodots and Their Enhanced Photodetectivity via Piezo-Phototronic Effect

Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 178 ◽  
Author(s):  
Dong Lee ◽  
G. Mohan Kumar ◽  
P. Ilanchezhiyan ◽  
Fu Xiao ◽  
Sh.U. Yuldashev ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Normal Condition ◽  
Indium Tin Oxide ◽  
Schottky Barrier Height ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Current Voltage ◽  
Ito Glass ◽  
Ultrahigh Sensitivity ◽  
Current Voltage Characteristics

In this paper, a photodetector based on arrayed CdTe microdots was fabricated on Bi coated transparent conducting indium tin oxide (ITO)/glass substrates. Current-voltage characteristics of these photodetectors revealed an ultrahigh sensitivity under stress (in the form of force through press) while compared to normal condition. The devices exhibited excellent photosensing properties with photoinduced current increasing from 20 to 76 μA cm−2 under stress. Furthermore, the photoresponsivity of the devices also increased under stress from 3.2 × 10−4 A/W to 5.5 × 10−3 A/W at a bias of 5 V. The observed characteristics are attributed to the piezopotential induced change in Schottky barrier height, which actually results from the piezo-phototronic effect. The obtained results also demonstrate the feasibility in realization of a facile and promising CdTe microdots-based photodetector via piezo-phototronic effect.

Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

1996 ◽  
Vol 39 (1) ◽  
pp. 83-87 ◽  
Author(s):  
Enise Ayyildiz ◽  
Abdulmecit Türüt ◽  
Hasan Efeoğlu ◽  
Sebahattin Tüzemen ◽  
Mustafa Sağlam ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics
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