Gallium arsenide transferred‐electron devices by low‐level ion implantation

ABSTRACTThis review emphasizes controlled shallow doping of GaAs by ion implantation for state-of-art GaAs IC technology. Electrical activation behavior of Si+ and SiF+ implanted GaAs after RTA under capless and PECVD Si3N4-capped conditions will be compared. It will be demonstrated that a remarkable improvement (> 20 %) both in carrier activation and as well mobility can be achieved by co-implanting low doses (< 1013 cm−2 of Al+ into n-dopant (including Si, Se and Te) implanted GaAs and subsequently annealing the material under capless RTA conditions. The maximum improvement in the electrical results with Al+ co-implants occurs for doses (e.g. < 1013 cm−2 for 30 keV Si+) which are used for fabricating shallow channels for submicron GaAs MESFETs. Complex dopant-annealing environment interactions during a buried p layer formation (using either Mg+ or Be+) will be discussed.

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The Effect of Mass Resolution During Ion Implantation on Defect Formation and Electrical Properties in Gallium Arsenide.

MRS Proceedings ◽

10.1557/proc-316-337 ◽

1993 ◽

Vol 316 ◽

Author(s):

Craig Jasper ◽

Scott Klingbeil ◽

K.S. Jones ◽

H.G. Robinson

Keyword(s):

Gallium Arsenide ◽

Electrical Properties ◽

Ion Implantation ◽

Threshold Voltage ◽

Defect Formation ◽

Mass Resolution ◽

Resolving Power ◽

Cross Contamination ◽

Mass Resolving Power ◽

Aperture Opening

ABSTRACTControl of threshold voltage during gallium arsenide (GaAs) Metal Semiconductor Field Effect Transistor (MESFET) processing is critical. Channel formation typically is done using ion implantation of 29Si+ from a SiF4 source. The use of Si+ presents a variety of potential cross-contamination problems. 28Si+ and 30Si+ beams can become contaminated with 28N2+, 28CO+, and 30NO+. While 29Si+ is relatively pure, the abundance of 29Si+ in the mass spectrum is 4.67%, thus reducing the potential beam current. This study investigates the effects of varying the mass resolving power of an Eaton 6200AV implanter on the electrical parameters and defect formation. The mass resolving power was adjusted by changing the mean path size through the slit of the aperture opening and magnetic separator current. Electrical device characterization measured a small shift in saturated source-drain current (Idss) and break down voltage, while threshold voltage shifts of approximately 80 mV were observed, with the various mass resolution powers. Transmission Electron Microscopy (TEM) showed that there is minimal change in the extended defect density with changes in isotope and aperture opening. Secondary Ion Mass Spectrometry (SIMS) measured the amount of cross contamination and these results correlated well with the observed changes in device electrical properties.

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Transient Annealing of Ion Implanted Gallium Arsenide

MRS Proceedings ◽

10.1557/proc-13-621 ◽

1982 ◽

Vol 13 ◽

Cited By ~ 8

Author(s):

J.S. Williams

Keyword(s):

Gallium Arsenide ◽

Liquid Phase ◽

Electrical Properties ◽

Ion Implantation ◽

Solid Phase ◽

Dopant Activation ◽

Implantation Damage ◽

Dopant Redistribution ◽

Ion Implanted

ABSTRACTThis paper provides a brief overview of the application of transient annealing to the removal of ion implantation damage and dopant activation in GaAs. It is shown that both the liquid phase and solid phase annealing processes are more complex in GaAs than those observed in Si. Particular attention is given to observations of damage removal, surface dissociation, dopant redistribution, solubility and the electrical properties of GaAs. The various annealing mechanisms are discussed and areas in need of further investigation are identified.

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