gallium nitride film
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Author(s):  
Jiale Tang ◽  
Yongjie Hu ◽  
Yudong Zhang ◽  
Zhiqiang Gu ◽  
Dongchen Che ◽  
...  

2019 ◽  
Vol 127 (7) ◽  
pp. 42
Author(s):  
Н.Н. Новикова ◽  
В.А. Яковлев ◽  
С.А. Климин ◽  
Т.В. Малин ◽  
А.М. Гилинский ◽  
...  

AbstractThe reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.


2018 ◽  
Vol 54 (1) ◽  
pp. 26-31
Author(s):  
Yu. Ya. Tomashpolsky ◽  
V. M. Matyuk ◽  
N. V. Sadovskaya

2017 ◽  
Vol 109 ◽  
pp. 750-757
Author(s):  
Lifei Tian ◽  
Guoan Cheng ◽  
Ruiting Zheng ◽  
Kun Tian ◽  
Xiaolu Yan ◽  
...  

2015 ◽  
Vol 13 (5-6) ◽  
pp. 200-204 ◽  
Author(s):  
Pingbo An ◽  
Lixia Zhao ◽  
Shuo Zhang ◽  
Lei Liu ◽  
Ruifei Duan ◽  
...  

2012 ◽  
Vol 51 (1) ◽  
pp. 01AF02 ◽  
Author(s):  
K. Scott A. Butcher ◽  
Brad W. Kemp ◽  
Ilian B. Hristov ◽  
Penka Terziyska ◽  
Peter W. Binsted ◽  
...  

2012 ◽  
Vol 51 (1S) ◽  
pp. 01AF02 ◽  
Author(s):  
K. Scott A. Butcher ◽  
Brad W. Kemp ◽  
Ilian B. Hristov ◽  
Penka Terziyska ◽  
Peter W. Binsted ◽  
...  

2007 ◽  
Vol 43 (7) ◽  
pp. 2270-2275 ◽  
Author(s):  
Dirk Ehrentraut ◽  
Yuji Kagamitani ◽  
Akira Yoshikawa ◽  
Naruhiro Hoshino ◽  
Hirohisa Itoh ◽  
...  

2005 ◽  
Vol 82 (3) ◽  
pp. 479-483 ◽  
Author(s):  
K. Obata ◽  
K. Sugioka ◽  
K. Midorikawa ◽  
T. Inamura ◽  
H. Takai

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