Synthesis of gallium nitride film and gallium oxide nano-ribbons by plasma immersion ion implantation of nitrogen into gallium arsenide

AbstractThe reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.

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Growth and optical properties of gallium nitride film on glass substrates

physica status solidi (c) ◽

10.1002/pssc.201510207 ◽

2015 ◽

Vol 13 (5-6) ◽

pp. 200-204 ◽

Cited By ~ 4

Author(s):

Pingbo An ◽

Lixia Zhao ◽

Shuo Zhang ◽

Lei Liu ◽

Ruifei Duan ◽

...

Keyword(s):

Optical Properties ◽

Gallium Nitride ◽

Nitride Film ◽

Glass Substrates ◽

Gallium Nitride Film

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Preparation of gallium nitride (GaN) and related compounds by plasma immersion ion implantation and rapid thermal annealing

Surface and Coatings Technology ◽

10.1016/s0257-8972(00)01044-6 ◽

2001 ◽

Vol 136 (1-3) ◽

pp. 142-145 ◽

Cited By ~ 8

Author(s):

Aaron H.P Ho ◽

Dixon T.K Kwok ◽

X.C Zeng ◽

Chung Chan ◽

Paul K Chu

Keyword(s):

Gallium Nitride ◽

Ion Implantation ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Plasma Immersion Ion Implantation ◽

Related Compounds

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A novel crystal defect in epitaxial wurtzite gallium nitride film

Materials Letters ◽

10.1016/s0167-577x(98)00159-1 ◽

1999 ◽

Vol 38 (3) ◽

pp. 202-207 ◽

Cited By ~ 1

Author(s):

S.Q Wang ◽

C.P Liu

Keyword(s):

Gallium Nitride ◽

Crystal Defect ◽

Nitride Film ◽

Gallium Nitride Film

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Formation of Gallium Nitride (GaN) Transition Layer by Plasma Immersion Ion Implantation and Rapid Thermal Annealing

MRS Proceedings ◽

10.1557/proc-618-309 ◽

2000 ◽

Vol 618 ◽

Author(s):

D. T. K. Kwok ◽

A. H. P. Ho ◽

X. C. Zeng ◽

C. Chan ◽

P. K. Chu ◽

...

Keyword(s):

Gallium Nitride ◽

Ion Implantation ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Ion Beam ◽

Chemical Vapor ◽

Crystal Form ◽

Organic Chemical ◽

Plasma Immersion Ion Implantation ◽

Amorphous Surface

ABSTRACTRecent advances in the preparation of gallium nitride (GaN) and related compounds have made possible the production of blue semiconductor laser. Conventional preparation involves growing GaN thin films on lattice-mismatching sapphire using metal-organic chemical vapor deposition (MOCVD). In this article, we describe an alternative method to produce a lattice-matching strained layer in GaAs for subsequent GaN growth by plasma immersion ion implantation (PIII) followed by rapid thermal annealing. Our novel approach uses broad ion impact energy distribution and multiple implant voltages to form a spread-out nitrogen depth profile and an amorphous surface layer. This approach circumvents the retained dose and low nitrogen content problems associated with ion beam implantation at fix energy. Based on our Raman study, the resulting structure after PIII and rapid thermal annealing is strained and contains some GaN possibly in crystal form

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