Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire

2010 ◽  
Vol 96 (5) ◽  
pp. 051109 ◽  
Author(s):  
Ji-Hao Cheng ◽  
YewChung Sermon Wu ◽  
Wei-Chih Liao ◽  
Bo-Wen Lin
Keyword(s):  
Light Emitting Diodes ◽  
Crystal Quality ◽  
Light Emitting ◽  
And Performance

scholarly journals In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 126
Author(s):  
Abdul Kareem K. Soopy ◽  
Zhaonan Li ◽  
Tianyi Tang ◽  
Jiaqian Sun ◽  
Bo Xu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gas Sensors ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Crystal Quality ◽  
Porous Structures ◽  
Light Emitting ◽  
Photochemical Etching ◽  
Recent Advances ◽  
Low Dimensional

This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

scholarly journals Improving the Stability and Performance of Perovskite Light-Emitting Diodes by Thermal Annealing Treatment

2016 ◽  
Vol 28 (32) ◽  
pp. 6906-6913 ◽  
Author(s):  
Jae Choul Yu ◽  
Dae Woo Kim ◽  
Da Bin Kim ◽  
Eui Dae Jung ◽  
Jong Hyun Park ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Light Emitting Diodes ◽  
Annealing Treatment ◽  
Light Emitting ◽  
Thermal Annealing Treatment ◽  
And Performance ◽  
The Stability

Enhanced stability and performance of light-emitting diodes based on in situ fabricated FAPbBr3 nanocrystals via ligand compensation with n-octylphosphonic acid

2020 ◽  
Vol 8 (29) ◽  
pp. 9936-9944 ◽  
Author(s):  
Yanan Wu ◽  
Lihui Liu ◽  
Wei Wang ◽  
Wenzhu Zhang ◽  
Hongtao Yu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Perovskite Nanocrystals ◽  
Device Efficiency ◽  
Improved Stability ◽  
And Performance ◽  
Enhanced Stability

Dual ligands are introduced for the in situ fabrication of perovskite nanocrystals, leading to higher crystallinity, improved stability and device efficiency.

scholarly journals Amine-Based Passivating Materials for Enhanced Optical Properties and Performance of Organic–Inorganic Perovskites in Light-Emitting Diodes

2017 ◽  
Vol 8 (8) ◽  
pp. 1784-1792 ◽  
Author(s):  
Seungjin Lee ◽  
Jong Hyun Park ◽  
Bo Ram Lee ◽  
Eui Dae Jung ◽  
Jae Choul Yu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
And Performance

Preparation and Performance Optimization of a Full Color Organic Light-Emitting Diodes Display Device

2012 ◽  
Vol 476-478 ◽  
pp. 1258-1263
Author(s):  
Shi Jun Cheng ◽  
Hua Jing Zheng ◽  
Quan Jiang ◽  
Gang Yang
Keyword(s):  
Performance Optimization ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Display Device ◽  
Light Emitting ◽  
Full Color ◽  
Organic Light ◽  
Average Luminance ◽  
And Performance ◽  
Driving Circuit

A full color 2.2″ passive matrix organic light-emitting diodes (OLEDs) with 128 (RGB) * 160 pixels was developed. The display features that driving circuit can transform 18 bits gray-scale data from a PC to the OLED panel via a DVI channel. The size of the pixel was 240μm240μm, while that of mono sub-pixel is 190μm45μm. The lifetime of panel was estimated over 5000h because of the use of dual-scan driving technology, and the power consumption of the display was 300mw about when the average luminance of panel reach 40cd/m2.

Reliability and Performance of Pseudomorphic Ultraviolet Light Emitting Diodes on Bulk Aluminum Nitride Substrates

2009 ◽  
Vol 1202 ◽  
Author(s):  
Shawn R. Gibb ◽  
James R. Grandusky ◽  
Yongjie Cui ◽  
Mark C. Mendrick ◽  
Leo J. Schowalter
Keyword(s):  
Dislocation Density ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Device Structure ◽  
Light Emitting ◽  
Bulk Crystal Growth ◽  
Low Dislocation Density ◽  
Piezoelectric Effects ◽  
And Performance ◽  
Pseudomorphic Growth

AbstractLow dislocation density epitaxial layers of AlxGa1-xN can be grown pseudomorphically on c-face AlN substrates prepared from high quality, bulk crystals. Here, we will report on initial characterization results from deep ultraviolet (UV) light emitting diodes (LEDs) which have been fabricated and packaged from these structures. As reported previously, pseudomorphic growth and atomically smooth surfaces can be achieved for a full LED device structure with an emission wavelength between 250 nm and 280 nm.A benefit of pseudomorphic growth is the ability to run the devices at high input powers and current densities. The high aluminum content AlxGa1-xN (x∼70%) epitaxial layer can be doped n-type to obtain sheet resistances < 200 Ohms/sq/μm due to the low dislocation density. Bulk crystal growth allows for the ability to fabricate substrates of both polar and non-polar orientations. Non-polar substrates are of particular interest for nitride growth because they eliminate electric field due to spontaneous polarization and piezoelectric effects which limit device performance. Initial studies of epitaxial growth on non-polar substrates will also be presented.

Traps and performance of MEH-PPV/CdSe(ZnS) nanocomposite-based organic light-emitting diodes

2008 ◽  
Vol 19 (45) ◽  
pp. 455202 ◽  
Author(s):  
Chih-Wen Lee ◽  
Cedric Renaud ◽  
Chain-Shu Hsu ◽  
Thien-Phap Nguyen
Keyword(s):  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
And Performance
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