Electron diffusion lengths in liquid‐phase epitaxialp‐GaAs:Ge layers determined by electron‐beam‐induced current method

1982 ◽  
Vol 53 (2) ◽  
pp. 1236-1237 ◽  
Author(s):  
C. C. Shen ◽  
K. P. Pande ◽  
G. L. Pearson
1993 ◽  
Vol 46 (2) ◽  
pp. 317 ◽  
Author(s):  
KSA Butcher ◽  
D Alexiev ◽  
TL Tansley

Measurements of minority carrier diffusion lengths for p-type and n-type GaAs were carried out using an electron beam induced current (EBIC) technique. The GaAs material was grown by liquid phase epitaxy (LPE) at the Australian Nuclear Science and Technology Organisation. The diffusion lengths measured for high purity p-type and n-type LPE-GaAs samples were observed to be longer than any previously reported.


1980 ◽  
Vol 51 (10) ◽  
pp. 5375 ◽  
Author(s):  
J. Piekoszewski ◽  
L. Castaner ◽  
J. J. Loferski ◽  
J. Beall ◽  
W. Giriat

2016 ◽  
Vol 119 (6) ◽  
pp. 065302 ◽  
Author(s):  
Takuto Kojima ◽  
Tomihisa Tachibana ◽  
Yoshio Ohshita ◽  
Ronit R. Prakash ◽  
Takashi Sekiguchi ◽  
...  

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