Interface state generation associated with hole transport in metal‐oxide‐semiconductor structures

Journal of Applied Physics ◽

10.1063/1.337618 ◽

1986 ◽

Vol 60 (1) ◽

pp. 448-449 ◽

Author(s):

H. E. Boesch ◽

F. B. McLean

Keyword(s):

Metal Oxide ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Hole Transport ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

State Generation

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Extra interface state generation enhanced by fluorine in tungsten‐polycided metal‐oxide‐semiconductor devices with nitrided oxide gate dielectric

Applied Physics Letters ◽

10.1063/1.114493 ◽

1995 ◽

Vol 67 (10) ◽

pp. 1456-1458 ◽

Author(s):

C. W. Chen ◽

Y. K. Fang ◽

G. Y. Lee ◽

J. C. Hsieh ◽

M. S. Liang

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

State Generation

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Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance

Journal of Applied Physics ◽

10.1063/1.3673572 ◽

2012 ◽

Vol 111 (1) ◽

pp. 014502 ◽

Author(s):

Hironori Yoshioka ◽

Takashi Nakamura ◽

Tsunenobu Kimoto

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Accurate Evaluation ◽

Semiconductor Structures

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Transconductance degradation and interface state generation in metal‐oxide‐semiconductor field‐effect transistors with oxynitride gate dielectrics under hot‐carrier stress

Applied Physics Letters ◽

10.1063/1.102819 ◽

1990 ◽

Vol 56 (3) ◽

pp. 250-252 ◽

Author(s):

G. Q. Lo ◽

W. C. Ting ◽

D. K. Shih ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress ◽

State Generation

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Interface State Generation in p-Type Si Metal/ Oxide/ Semiconductor Capacitors due to Fowler-Nordheim Tunneling Current Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l1315 ◽

1995 ◽

Vol 34 (Part 2, No. 10B) ◽

pp. L1315-L1317 ◽

Author(s):

Masao Inoue ◽

Junji Shirafuji

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Stress ◽

State Generation ◽

P Type ◽

Nordheim Tunneling

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The effects of a hydrogen ambient on the interface state energy distribution of gamma irradiated and charge injected metal‐oxide‐semiconductor structures fabricated on germanium/boron doped silicon

Journal of Applied Physics ◽

10.1063/1.349815 ◽

1991 ◽

Vol 70 (11) ◽

pp. 6902-6907 ◽

Author(s):

O. Hashemipour ◽

S. S. Ang ◽

W. D. Brown ◽

J. R. Yeargan ◽

L. West

Keyword(s):

Metal Oxide ◽

Energy Distribution ◽

State Energy ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Boron Doped ◽

Doped Silicon ◽

Gamma Irradiated

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Charge trapping and interface state generation in metal‐oxide‐semiconductor capacitors due to Fowler–Nordheim tunneling injection at low temperatures

Journal of Applied Physics ◽

10.1063/1.345082 ◽

1990 ◽

Vol 67 (11) ◽

pp. 6903-6907 ◽

Author(s):

M. Sakashita ◽

S. Zaima ◽

Y. Yasuda

Keyword(s):

Metal Oxide ◽

Low Temperatures ◽

Charge Trapping ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

State Generation ◽

Tunneling Injection ◽

Nordheim Tunneling

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Interface state density of SiO2/p-type 4H-SiC ( 0001), ( 112¯0), ( 11¯00) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes

Applied Physics Letters ◽

10.1063/1.4946863 ◽

2016 ◽

Vol 108 (15) ◽

pp. 152108 ◽

Author(s):

Takuma Kobayashi ◽

Seiya Nakazawa ◽

Takafumi Okuda ◽

Jun Suda ◽

Tsunenobu Kimoto

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

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Oxide-Voltage and Its Polarity Dependence of Interface-State-Generation Efficiency in (100) n-Si Metal/Oxide/Semiconductor Capacitors

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.5921 ◽

1996 ◽

Vol 35 (Part 1, No. 12A) ◽

pp. 5921-5924 ◽

Author(s):

Masao Inoue ◽

Akihiro Shimada ◽

Junji Shirafuji

Keyword(s):

Metal Oxide ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Generation Efficiency ◽

State Generation

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Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing

Applied Physics Letters ◽

10.1063/1.126103 ◽

2000 ◽

Vol 76 (12) ◽

pp. 1585-1587 ◽

Author(s):

K. Fukuda ◽

S. Suzuki ◽

T. Tanaka ◽

K. Arai

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Hydrogen Annealing ◽

Semiconductor Structures

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Response to “Comment on ‘Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing’ ” [Appl. Phys. Lett. 78, 4043 (2001)]

Applied Physics Letters ◽

10.1063/1.1379979 ◽

2001 ◽

Vol 78 (25) ◽

pp. 4045-4045 ◽

Author(s):

K. Fukuda ◽

K. Arai ◽

S. Suzuki ◽

T. Tanaka

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Hydrogen Annealing ◽

Semiconductor Structures

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