Oxide-Voltage and Its Polarity Dependence of Interface-State-Generation Efficiency in (100) n-Si Metal/Oxide/Semiconductor Capacitors

1996 ◽  
Vol 35 (Part 1, No. 12A) ◽  
pp. 5921-5924 ◽  
Author(s):  
Masao Inoue ◽  
Akihiro Shimada ◽  
Junji Shirafuji
Keyword(s):  
Metal Oxide ◽  
Interface State ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Generation Efficiency ◽  
State Generation

Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors

2012 ◽  
Vol 101 (13) ◽  
pp. 133505 ◽  
Author(s):  
Wen-Hung Lo ◽  
Ting-Chang Chang ◽  
Jyun-Yu Tsai ◽  
Chih-Hao Dai ◽  
Ching-En Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Interface State ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Positive Bias ◽  
Bias Stress ◽  
State Generation

Interface state‐induced shift of the oxide and semiconductor core levels for metal–oxide–semiconductor devices

1996 ◽  
Vol 80 (3) ◽  
pp. 1578-1582 ◽  
Author(s):  
H. Kobayashi ◽  
K. Namba ◽  
Y. Yamashita ◽  
Y. Nakato ◽  
T. Komeda ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Interface State ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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