Charge trapping and interface state generation in metal‐oxide‐semiconductor capacitors due to Fowler–Nordheim tunneling injection at low temperatures

1990 ◽  
Vol 67 (11) ◽  
pp. 6903-6907 ◽  
Author(s):  
M. Sakashita ◽  
S. Zaima ◽  
Y. Yasuda
Keyword(s):  
Metal Oxide ◽  
Low Temperatures ◽  
Charge Trapping ◽  
Interface State ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
State Generation ◽  
Tunneling Injection ◽  
Nordheim Tunneling

Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors

2012 ◽  
Vol 101 (13) ◽  
pp. 133505 ◽  
Author(s):  
Wen-Hung Lo ◽  
Ting-Chang Chang ◽  
Jyun-Yu Tsai ◽  
Chih-Hao Dai ◽  
Ching-En Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Interface State ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Positive Bias ◽  
Bias Stress ◽  
State Generation
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