Correlated transmission electron microscopy and photoluminescence studies of the Se+‐ion implantation of a GaAs/(Al,Ga)As multiple quantum well

1990 ◽  
Vol 67 (3) ◽  
pp. 1279-1287 ◽  
Author(s):  
E. G. Bithell ◽  
W. M. Stobbs ◽  
C. Phillips ◽  
R. Eccleston ◽  
R. Gwilliam
1998 ◽  
Vol 545 ◽  
Author(s):  
S. B. Cronin ◽  
T. Koga ◽  
X. Sun ◽  
Z. Ding ◽  
S.-C. Huang ◽  
...  

AbstractAn enhanced thermoelectric figure of merit, ZT, has been predicted for Bi2Te3 in the form of 2-dimensional quantum wells. A new approach to making multiple quantum well (MQW) structures for thermoelectric applications utilizing a chemical intercalation technique is proposed and investigated. It is proposed that by starting from Li intercalated Bi2Te3 and Bi2Se3, the layers of these materials can be separated by chemical means. The layers of Bi2Te3 or Bi2 Se3 can then be restacked, by self-assembly, forming a non-periodic array of quantum wells. These chemically prepared MQWs are characterized by X-ray diffraction, SEM (scanning electron microscopy) and TEM (transmission electron microscopy) at various stages in the sample preparation to assess the degree to which the actual samples match the proposal. Experimental measurements of the Seebeck coefficient (S) and the electrical conductivity (σ) were performed over a range of temperatures for the initial bulk materials. It is found that some of the steps in the proposed fabrication have been achieved but still much improvement is needed before any practical thermoelectric 2D-system can be provided.


2019 ◽  
Vol 963 ◽  
pp. 399-402 ◽  
Author(s):  
Cristiano Calabretta ◽  
Massimo Zimbone ◽  
Eric G. Barbagiovanni ◽  
Simona Boninelli ◽  
Nicolò Piluso ◽  
...  

In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminescence (PL), Raman spectroscopy and transmission electron microscopy (TEM). The aim of this work was to test the effectiveness of double step annealing to reduce the density of point defects generated during the annealing of a P implanted 4H-SiC epitaxial layer. The outcome of this work evidences that neither the first 1 hour isochronal annealing at 1650 - 1700 - 1750 °C, nor the second one at 1500 °C for times between 4 hour and 14 hour were able to recover a satisfactory crystallinity of the sample and achieve dopant activations exceeding 1%.


2019 ◽  
Vol 53 (14) ◽  
pp. 1914-1917 ◽  
Author(s):  
L. I. Goray ◽  
E. V. Pirogov ◽  
E. V. Nikitina ◽  
E. V. Ubyivovk ◽  
L. G. Gerchikov ◽  
...  

1998 ◽  
Vol 533 ◽  
Author(s):  
Glenn G. Jernigan ◽  
Conrad L. Silvestre ◽  
Mohammad Fatemi ◽  
Mark E. Twigg ◽  
Phillip E. Thompson

AbstractThe use of Sb as a surfactant in suppressing Ge segregation during SiGe alloy growth was investigated as a function of Sb surface coverage, Ge alloy concentration, and alloy thickness using xray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy. Unlike previous studies where Sb was found to completely quench Ge segregation into a Si capping layer, we find that Sb can not completely prevent Ge segregation while Si and Ge are being co-deposited. This results in the production of a non-square quantum well with missing Ge at the beginning and extra Ge at the end of the alloy. We also found that Sb does not relieve strain in thin films but does result in compositional or strain variations within thick alloy layers.


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