Transmission Electron Microscopy and Spectroscopic Ellipsometry Studies of Damage Layer Induced by Large Tilt Angle Ion Implantation

1996 ◽  
Vol 143 (8) ◽  
pp. 2636-2640
Author(s):  
Zhiping He ◽  
Filadelfo Cristiano ◽  
Zuyao Zhou ◽  
Youhua Qian ◽  
Liangyao Chen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Spectroscopic Ellipsometry ◽  
Tilt Angle ◽  
Damage Layer ◽  
Transmission Electron

scholarly journals Thermal Annealing of High Dose P Implantation in 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 399-402 ◽  
Author(s):  
Cristiano Calabretta ◽  
Massimo Zimbone ◽  
Eric G. Barbagiovanni ◽  
Simona Boninelli ◽  
Nicolò Piluso ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Epitaxial Layer ◽  
Point Defects ◽  
High Dose ◽  
Double Step ◽  
Post Annealing ◽  
Transmission Electron

In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminescence (PL), Raman spectroscopy and transmission electron microscopy (TEM). The aim of this work was to test the effectiveness of double step annealing to reduce the density of point defects generated during the annealing of a P implanted 4H-SiC epitaxial layer. The outcome of this work evidences that neither the first 1 hour isochronal annealing at 1650 - 1700 - 1750 °C, nor the second one at 1500 °C for times between 4 hour and 14 hour were able to recover a satisfactory crystallinity of the sample and achieve dopant activations exceeding 1%.

Ultra-Shallow P+/N Junctions Formed by SiF4 Preamorphization and BF3 Implantation Using Plasma Immersion Ion Implantation

1992 ◽  
Vol 279 ◽  
Author(s):  
Erin C. Jones ◽  
Seongil Im ◽  
Nathan W. Cheung
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Amorphous Region ◽  
Electrical Characteristics ◽  
Applied Bias ◽  
Rapid Thermal Anneal ◽  
Transmission Electron ◽  
Plasma Immersion Ion Implantation ◽  
Si Wafer

ABSTRACTSub-100 nm P+/N junctions are fabricated by implanting wafers in the plasma immersion ion implantation system (PIII). Ions from SiF4 and BF3 plasmas are implanted at energies from 4–6 keV and 2 keV, respectively. The amorphous region formed by SiF4 im-plantion is shown to be effective in slowing B diffusion during a 10 sec, 1060°C rapid thermal anneal step. Channeling and transmission electron microscopy studies show the recrys-tallized amorphous region is comparable in quality to an unprocessed Si wafer, and the implantation and annealing sequence has no detrimental effects on the physical or electrical characteristics of fabricated devices. Diodes have forward ideality factors of 1.05 to 1.06 and reverse leakage as low as 2 nA/cm2 in the diode bulk at -5 V applied bias.

scholarly journals Transmission Electron Microscopy of Ultramicrotome Samples of Porous InSb formed by Ion Implantation

2006 ◽  
Vol 12 (S02) ◽  
pp. 640-641
Author(s):  
DJ Llewellyn ◽  
SM Kluth ◽  
MC Ridgway
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Transmission Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005

Characterization of the ZnSe/GaAs Interface Layer by Tem and Spectroscopic Ellipsometry

1992 ◽  
Vol 280 ◽  
Author(s):  
R. Dahmani ◽  
L. Salamanca-Riba ◽  
D. P. Beesabathina ◽  
N. V. Nguyen ◽  
D. Chandler-Horowitz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Spectroscopic Ellipsometry ◽  
Interface Layer ◽  
Transmission Electron ◽  
Three Phase ◽  
Znse Thin Films ◽  
Microscopy Images

ABSTRACTThe interface between ZnSe thin films and GaAs substrates is characterized by High Resolution Transmission Electron Microscopy and room temperature Spectroscopic Ellipsometry. The films were grown on (001) GaAs by Molecular Beam Epitaxy. A three-phase model is used in the reduction of the ellipsometric data, from which the presence of a transition layer of Ga2Se3, with a thickness of less than 1 nm, is confirmed. These results corroborate the high resolution transmission electron microscopy images obtained from the same samples.

Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium

2007 ◽  
Vol 131-133 ◽  
pp. 101-106
Author(s):  
Marie-Laure David ◽  
Frédéric Pailloux ◽  
Michèl Drouet ◽  
Marie France Beaufort ◽  
Jean François Barbot ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Roughness ◽  
Ion Implantation ◽  
Intermediate Temperature ◽  
Hydrogen Ions ◽  
Layer Transfer ◽  
Implantation Temperature ◽  
Transmission Electron

(001) n-type Ge has been implanted at given fluence and intermediate temperature with hydrogen ions using two processes: conventional in-line implantation and plasma based ion implantation. The as-created microstructure has been compared using transmission electron microscopy. In particular, it has been shown that the major differences observed are due to the implantation temperature, much higher during the PBII process. This suggests that plasma based ion implantation could be used for layer transfer in spite of a higher surface roughness observed after the PBII process.

Cut Surface Damage to Metals from Diamond Knife Ultramicrotomy

1967 ◽  
Vol 25 ◽  
pp. 360-361
Author(s):  
J. A. Hugo ◽  
V. A. Phillips
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Recent Work ◽  
Light Microscope ◽  
Cumulative Effect ◽  
Surface Damage ◽  
Damage Layer ◽  
Transmission Electron ◽  
Cut Surface ◽  
Diamond Knife

Recent work in our laboratory has shown that cut surfaces which are perfect when viewed in the light microscope may be prepared by ultramicrotomy using a diamond knife. Alloys successfully examined include Pb-Sn, Sn-Bi, Al-Mg, Cu-Al, and Cu-Co. After a normal etch, a Sn-5% Bi alloy showed no damage by replication electron microscopy over extensive areas. Although the cut surface may be flat, the question of whether or not there is an internally damaged layer remains unanswered. This is particularly pertinent to the use of ultramicrotomed slices for transmission electron microscopy, since damage left on the cut surface would be incorporated in the next slice cut, furthermore, if the damage layer were deep there could be a cumulative effect, so that damage from two or more previous cuts could be incorporated in a slice, in addition to that resulting from the shear during cutting.

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