Growth kinetics of ultrathin SiO2films fabricated by rapid thermal oxidation of Si substrates in N2O

1991 ◽  
Vol 70 (2) ◽  
pp. 1072-1074 ◽  
Author(s):  
W. Ting ◽  
H. Hwang ◽  
J. Lee ◽  
D. L. Kwong
Keyword(s):  
Thermal Oxidation ◽  
Growth Kinetics ◽  
Si Substrates ◽  
Rapid Thermal Oxidation ◽  
Kinetics Of

Silicon Transport in Lateral Silicide Growth of CrSi2

1986 ◽  
Vol 71 ◽  
Author(s):  
L. R. Zheng ◽  
L. R. Doolittle ◽  
J. W. Mayer
Keyword(s):  
Growth Kinetics ◽  
Lateral Diffusion ◽  
Diffusion Couples ◽  
Si Substrates ◽  
Impurity Segregation ◽  
Silicide Growth ◽  
Device Geometry ◽  
Metal Layers ◽  
Kinetics Of ◽  
Influence Of Impurities

AbstractSilicide formation and growth are studied in three geometries: conventional planar thin films, lateral diffusion couples formed by depositing metal layers on Si islands, and device geometry couples formed by depositing metal on oxide-patterned Si substrates. The influence of impurities is studied by implanting arsenic and krypton into conventional and device geometry structures.Here we present growth kinetics of CrSi2 where the presence of impurities has a strong influence. Si transport dominates in disilicide formation and leads to erosion of contacts around the periphery of oxide windows. Implantation of arsenic suppresses CrSi 2 formation; with krypton implantation, the growth kinetics shifts from linear to square-root in character. We attribute these results to impurity segregation at interfaces or grain boundaries.

Oxidation kinetics of Si and SiGe by dry rapid thermal oxidation, in-situ steam generation oxidation and dry furnace oxidation

2017 ◽  
Vol 121 (24) ◽  
pp. 245308 ◽  
Author(s):  
Fabien Rozé ◽  
Olivier Gourhant ◽  
Elisabeth Blanquet ◽  
François Bertin ◽  
Marc Juhel ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Oxidation Kinetics ◽  
Steam Generation ◽  
Rapid Thermal Oxidation ◽  
Kinetics Of

Kinetics of Rapid Thermal Oxidation

1989 ◽  
Vol 136 (9) ◽  
pp. 2673-2676 ◽  
Author(s):  
C. A. Paz de Araujo ◽  
R. W. Gallegos ◽  
Y. P. Huang
Keyword(s):  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
Kinetics Of

Composition and Growth Kinetics of the Interfacial Layer for MOCVD HfO[sub 2] Layers on Si Substrates

2004 ◽  
Vol 151 (4) ◽  
pp. F77 ◽  
Author(s):  
S. Van Elshocht ◽  
M. Caymax ◽  
S. De Gendt ◽  
T. Conard ◽  
J. Pétry ◽  
...  
Keyword(s):  
Growth Kinetics ◽  
Interfacial Layer ◽  
Si Substrates ◽  
Kinetics Of

Kinetics of Rapid Thermal Oxidation of Silicon

1992 ◽  
Vol 31 (Part 1, No. 10) ◽  
pp. 3436-3439 ◽  
Author(s):  
Hisashi Fukuda ◽  
Makoto Yasuda ◽  
Toshiyuki Iwabuchi
Keyword(s):  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
Kinetics Of

Kinetics of Rapid Thermal Oxidation of Silicon

1987 ◽  
Vol 92 ◽  
Author(s):  
Stephan E. Lassig ◽  
Thomas J. Debolske ◽  
John L. Crowley
Keyword(s):  
Activation Energy ◽  
Thermal Oxidation ◽  
Kinetic Data ◽  
Halogen Lamp ◽  
Heating Source ◽  
Rapid Thermal Oxidation ◽  
Set Up ◽  
Lamp Source ◽  
Kinetics Of ◽  
Tungsten Halogen Lamp

ABSTRACTThis paper presents kinetic data for the rapid thermal oxidation (RTO) of <100 silicon using a wall stabilized low pressure arc lamp as the heating source. The data shows a single activation energy of 1.31 eV over the temperature range of 900°C to 1200°C and times of 60 seconds to 240 seconds. Comparisons are made with published kinetic data of RTO using tungsten-halogen lamp source [1] and with furnace oxidation kinetics for short times (<240 sec.) [2]. “Wet” oxidation results using O2:H2 as the oxidizing ambient reveal a lower activation energy and preexponential coefficient than the dry oxidation. Also presented are results using an experimental set-up which exhibits ultraviolet enhanced oxidation.

Microstructure and Kinetic Analysis of the Initial Stages of SiC Formation in a Rapid Thermal Processor

1991 ◽  
Vol 224 ◽  
Author(s):  
Ki-Bum Kim ◽  
Jimmy C. Liao ◽  
Brad J. Burrow ◽  
Eileen A. Sullivan
Keyword(s):  
Growth Rate ◽  
High Resolution ◽  
Growth Kinetics ◽  
Kinetic Data ◽  
Carbon Layer ◽  
Cross Sectional ◽  
Si Substrates ◽  
Growth Modes ◽  
Reaction Proceeds ◽  
Kinetics Of

AbstractWe have investigated the evolution of the microstructure, growth modes, and growth kinetics of β-SiC in a rapid thermal processor using FTIR, ESCA, and TEM. SiC layers were formed by reacting C2H4 with Si substrates between 900 and 1300°C at 5 torr. We found that SiC forms discrete nuclei at 900°C, a mixture of discrete nuclei with a thin β-SiC layer in between those nuclei at around 1000°C, and a continuous β-SiC layer above 1100°C. In all cases, β-SiC grows epitaxially on Si substrates. In addition, we identified that a graphitic carbon layer is formed on top of a continuous β-SiC layer. The thickness of the SiC layer was deduced from the integrated absorption spectra of FTIR and measured from the high resolution cross-sectional TEM micrographs. Kinetic data indicate that SiC grows rapidly at the initial stages of reaction. The growth rate, however, is retarded significantly as the reaction proceeds.

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