Kinetics of Rapid Thermal Oxidation of Silicon

1987 ◽  
Vol 92 ◽  
Author(s):  
Stephan E. Lassig ◽  
Thomas J. Debolske ◽  
John L. Crowley
Keyword(s):  
Activation Energy ◽  
Thermal Oxidation ◽  
Kinetic Data ◽  
Halogen Lamp ◽  
Heating Source ◽  
Rapid Thermal Oxidation ◽  
Set Up ◽  
Lamp Source ◽  
Kinetics Of ◽  
Tungsten Halogen Lamp

ABSTRACTThis paper presents kinetic data for the rapid thermal oxidation (RTO) of <100 silicon using a wall stabilized low pressure arc lamp as the heating source. The data shows a single activation energy of 1.31 eV over the temperature range of 900°C to 1200°C and times of 60 seconds to 240 seconds. Comparisons are made with published kinetic data of RTO using tungsten-halogen lamp source [1] and with furnace oxidation kinetics for short times (<240 sec.) [2]. “Wet” oxidation results using O2:H2 as the oxidizing ambient reveal a lower activation energy and preexponential coefficient than the dry oxidation. Also presented are results using an experimental set-up which exhibits ultraviolet enhanced oxidation.

Oxidation kinetics of Si and SiGe by dry rapid thermal oxidation, in-situ steam generation oxidation and dry furnace oxidation

2017 ◽  
Vol 121 (24) ◽  
pp. 245308 ◽  
Author(s):  
Fabien Rozé ◽  
Olivier Gourhant ◽  
Elisabeth Blanquet ◽  
François Bertin ◽  
Marc Juhel ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Oxidation Kinetics ◽  
Steam Generation ◽  
Rapid Thermal Oxidation ◽  
Kinetics Of

Kinetics of Rapid Thermal Oxidation

1989 ◽  
Vol 136 (9) ◽  
pp. 2673-2676 ◽  
Author(s):  
C. A. Paz de Araujo ◽  
R. W. Gallegos ◽  
Y. P. Huang
Keyword(s):  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
Kinetics Of

Kinetics of Rapid Thermal Oxidation of Silicon

1992 ◽  
Vol 31 (Part 1, No. 10) ◽  
pp. 3436-3439 ◽  
Author(s):  
Hisashi Fukuda ◽  
Makoto Yasuda ◽  
Toshiyuki Iwabuchi
Keyword(s):  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
Kinetics Of

Effect of Tackifier on Thermal Oxidation Kinetics and Effective Storage Time of Raw Natural Rubber

2014 ◽  
Vol 898 ◽  
pp. 102-106
Author(s):  
Bei Long Zhang ◽  
Hong Hai Huang ◽  
Wei Yong Deng ◽  
Yong Zhou Wang ◽  
Li Ding ◽  
...  
Keyword(s):  
Activation Energy ◽  
Natural Rubber ◽  
Thermal Oxidation ◽  
Oxidation Kinetics ◽  
Storage Time ◽  
Hydrazine Sulfate ◽  
Accelerated Storage ◽  
Thermal Oxidation Kinetics ◽  
Storage Times ◽  
Kinetics Of

The thermal oxidation kinetics of natural rubber containing hydrazine dihydrochloride or hydrazine sulfate used as tackifier were studied, and the effective storage time of natural rubber containing tackifier was predicted with a method of heat accelerated storage aging. The results show that the thermal oxidation activation energy of natural rubber containing hydrazine dihydrochloride is 105.6kJ/ mol, being a little higher than that (104.7 kJ/ mol) of the control. The thermal oxidation activation energy of natural rubber containing hydrazine sulfate is 103.1kJ/ mol, being a little lower than that of the control. The effective storage time of natural rubber containing hydrazine dihydrochloride is 13.4 years at 30°C,27.0years at 25°C, and 55.9years at 20°C. The effective storage time of natural rubber containing hydrazine sulfate is 11.6years at 30°C,23.0 at 25°C, and 46.8years at 20°C.The effective storage times of natural rubber containing two tackifiers hydrazine dihydrochloride or hydrazine sulfate are higher than that of the control at the same condition.

The Kinetics of Low Pressure Rapid Thermal Oxidation of Silicon

1989 ◽  
Vol 146 ◽  
Author(s):  
Stephan E Lassig ◽  
John L
Keyword(s):  
Activation Energy ◽  
Thermal Oxidation ◽  
Rate Constant ◽  
Linear Dependence ◽  
Oxidation Kinetics ◽  
Parabolic Rate Constant ◽  
Parabolic Model ◽  
Parabolic Rate ◽  
Kinetics Of ◽  
Short Times

ABSTRACTA study of the oxidation kinetics of lightly doped (100) silicon in dry oxygen has been carried out at different pressures (0.03 atm. to 1.0 atm.) and temperatures (900ºC to 1200ºC) for short times (< 500 seconds). The data can be fit equally well to the parabolic model as it can to the linearparabolic or parallel oxidation models. The activation energy derived from analysis of the parabolic rate constant is 0.94 eVand is the same at 1.0 and 0.1 atmosphere dry O2. It was also found that the parabolic rate constant displayed a linear dependence on the O2 pressure.

Optical, Electrical, and Mechanical Characterization of Rapid Thermal Oxidation

1994 ◽  
Vol 342 ◽  
Author(s):  
C. B. Yarling ◽  
W. A. Keenan
Keyword(s):  
Thermal Oxidation ◽  
Minority Carrier ◽  
Measurement Techniques ◽  
Minority Carrier Lifetime ◽  
Oxide Thickness ◽  
Beam Profile ◽  
Halogen Lamp ◽  
Rapid Thermal Oxidation ◽  
Optical Inspection ◽  
P Type

ABSTRACTIn this study, 6-150mm p-type <100> wafers were cleaned, laser-scribed, and pre-process measured for stress. The wafers were then processed in a tungsten-halogen lamp RTP system with a target Rapid Thermal Oxidation (RTO) thickness of 100Å. Three categories of whole-wafer measurement techniques were used to characterize these wafers: optical, electrical, and mechanical. Optical inspection techniques included spectroscopic reflectometry (reflectivity), and a combination of beam profile reflectometry and beam profile ellipsometry (thickness). Electrical techniques included C-V plotting with a mercury probe (oxide thickness from Cmax, breakdown voltage, and interface trap density) as well as laser-induced photo-current scanning (minority carrier lifetime, minority-carrier diffusion-length). Mechanical inspection included wafer warpage and stress measurements as well as optical imaging inspection using the magic mirror method (damage and defects). Wafer measurements from these instruments (i.e., contour and 3-d maps) are used to characterize integrity of the RTO process.

The kinetics of the thermal insertion reaction of tin(II) halides with cyclopentadienyliron dicarbonyl dimer

1970 ◽  
Vol 48 (21) ◽  
pp. 3300-3303 ◽  
Author(s):  
P. F. Barrett ◽  
Kenneth K. W. Sun
Keyword(s):  
Activation Energy ◽  
Kinetic Data ◽  
Activation Enthalpy ◽  
Visible Spectrum ◽  
Nucleophilic Attack ◽  
Insertion Reaction ◽  
Activation Entropy ◽  
Kcal Mole ◽  
Metal Metal ◽  
Kinetics Of

The kinetics of the thermal insertion reaction of SnBr2 and SnCl2 with the metal–metal bonded dimer [π-C5H3Fe(CO)2]2 have been studied by following the change in the visible spectrum. The kinetic data are consistent with a two-stage mechanism involving the formation of a carbonyl-bridged intermediate followed by nucleophilic attack by the halides on this intermediate. The formation of the intermediate requires an activation enthalpy of 38.0 ± 1.0 kcal/mole, and an activation entropy of 45.5 + 1.5 cal mole−1 deg−1. The activation energy required to break the Fe—Fe bond is estimated to be about 32 kcal/mole.

Oxidation Kinetics of Ge+-Ion Implanted Si

1987 ◽  
Vol 105 ◽  
Author(s):  
O. W. Holland ◽  
C. W. White ◽  
D. Fathy
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Oxidation Kinetics ◽  
Kinetic Data ◽  
Anomalous Behavior ◽  
Steam Oxidation ◽  
Oxidation Rates ◽  
Kinetics Of ◽  
Ion Implanted

AbstractKinetic data are provided for oxidation of Ge+-ion implanted Si over a range of temperature and oxidation ambient. Oxidation rates were enhanced in implanted Si and, over most of the range studied, found to be consistent with a modified reaction at the oxide/Si interface. However, this reaction is shown to be more complex than in virgin Si and could not be represented by a single activation energy. An anomalous behavior is exhibited at low-temperature for steam oxidation. This behavior is characterized and the mechanisms which are responsible are discussed.

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