Influence of dc bias voltage on the refractive index and stress of carbon‐diamond films deposited from a CH4/Ar rf plasma

This research presents a technique of an electro optic effect for enhancement the an accomplishment of an electro optics switch using Mat lab simulation program . this technique includes design a mathematical model for evaluate the effect of different parameters such as refractive index (n), distance of separation between waveguides (d), length of electrodes (L), relative refractive index (Δn), and switching voltage (V), on the DC bias voltage of an electro optics switch. In this work the investigation of performance of an electro optics switch by analysis of an effect of distance between waveguides and the changing of refractive index on the bias voltage (V), and which optimizes when the wavelength is from 1300 into 1550 nm. Finally, an electro-optic active switch is designed and optimized, using the analytical model and which considers important device in the modern optical communication system.

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Characterization of homoepitaxial diamond films by Electron microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088713 ◽

1991 ◽

Vol 49 ◽

pp. 880-881

Author(s):

D.P. Malta ◽

S.A. Willard ◽

R.A. Rudder ◽

G.C. Hudson ◽

J.B. Posthill ◽

...

Keyword(s):

Electron Microscopy ◽

Surface Defects ◽

Substrate Surface ◽

Diamond Films ◽

Chemical Vapor ◽

Polycrystalline Diamond ◽

Large Degree ◽

Rf Plasma ◽

Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

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Investigation of the Carrier Movement through the Tunneling Junction in the InGaP/GaAs Dual Junction Solar Cell Using the Electrically and Optically Biased Photoreflectance Spectroscopy

Energies ◽

10.3390/en14030638 ◽

2021 ◽

Vol 14 (3) ◽

pp. 638

Author(s):

Sanam SaeidNahaei ◽

Hyun-Jun Jo ◽

Sang Jo Lee ◽

Jong Su Kim ◽

Sang Jun Lee ◽

...

Keyword(s):

Solar Cell ◽

Electric Field ◽

Electric Fields ◽

Bias Voltage ◽

Tunnel Junction ◽

Photogenerated Carrier ◽

Internal Electric Field ◽

Junction Solar Cell ◽

Photoreflectance Spectroscopy ◽

Dc Bias

For examining the carrier movements through tunnel junction, electrically and optically-biased photoreflectance spectroscopy (EBPR and OBPR) were used to investigate the internal electric field in the InGaP/GaAs dual junction solar cell at room temperature. At InGaP and GaAs, the strength of p-n junction electric fields (Fpn) was perturbed by the external DC bias voltage and CW light intensity for EBPR and OBPR experiments, respectively. Moreover, the Fpn was evaluated using the Fast Fourier Transform (FFT) of the Franz—Keldysh oscillation from PR spectra. In the EBPR, the electric field decreased by increasing the DC bias voltage, which also decreased the potential barrier. In OBPR, when incident CW light is absorbed by the top cell, the decrement of the Fpn in the GaAs cell indicates that the photogenerated carriers are accumulated near the p-n junction. Photogenerated carriers in InGaP can pass through the tunnel junction, and the PR results show the contribution of the modification of the electric field by the photogenerated carriers in each cell. We suggest that PR spectroscopy with optical-bias and electrical-bias could be analyzed using the information of the photogenerated carrier passed through the tunnel junction.

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DC-bias-voltage dependence of degradation of aluminum electrolytic capacitors

Microelectronics Reliability ◽

10.1016/j.microrel.2018.02.012 ◽

2018 ◽

Vol 83 ◽

pp. 115-118 ◽

Cited By ~ 4

Author(s):

K. Hasegawa ◽

K. Tsuzaki ◽

S. Nishizawa

Keyword(s):

Bias Voltage ◽

Voltage Dependence ◽

Electrolytic Capacitors ◽

Dc Bias ◽

Bias Voltage Dependence ◽

Aluminum Electrolytic Capacitors

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Doped Nanocrystalline Diamond Films as Reflective Layers for Fiber-Optic Sensors of Refractive Index of Liquids

Materials ◽

10.3390/ma12132124 ◽

2019 ◽

Vol 12 (13) ◽

pp. 2124 ◽

Cited By ~ 4

Author(s):

Monika Kosowska ◽

Daria Majchrowicz ◽

Kamatchi J. Sankaran ◽

Mateusz Ficek ◽

Ken Haenen ◽

...

Keyword(s):

Refractive Index ◽

Fiber Optic ◽

Microwave Plasma ◽

Diamond Films ◽

Chemical Vapor ◽

Fiber Optic Sensors ◽

Nanocrystalline Diamond ◽

Silicon Substrates ◽

Boron Doped ◽

Interferometric Sensor

This paper reports the application of doped nanocrystalline diamond (NCD) films—nitrogen-doped NCD and boron-doped NCD—as reflective surfaces in an interferometric sensor of refractive index dedicated to the measurements of liquids. The sensor is constructed as a Fabry–Pérot interferometer, working in the reflective mode. The diamond films were deposited on silicon substrates by a microwave plasma enhanced chemical vapor deposition system. The measurements of refractive indices of liquids were carried out in the range of 1.3 to 1.6. The results of initial investigations show that doped NCD films can be successfully used in fiber-optic sensors of refractive index providing linear work characteristics. Their application can prolong the lifespan of the measurement head and open the way to measure biomedical samples and aggressive chemicals.

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Frequency and dc bias voltage dependent dielectric properties and electrical conductivity of BaTiO3SrTiO3/(SiO2)x nanocomposites

Ceramics International ◽

10.1016/j.ceramint.2019.03.092 ◽

2019 ◽

Vol 45 (9) ◽

pp. 11989-12000 ◽

Cited By ~ 29

Author(s):

Y. Slimani ◽

B. Unal ◽

E. Hannachi ◽

A. Selmi ◽

M.A. Almessiere ◽

...

Keyword(s):

Electrical Conductivity ◽

Dielectric Properties ◽

Bias Voltage ◽

Voltage Dependent ◽

Dc Bias

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Critical Parameters and Influence on Dynamic Behaviours of Nonlinear Electrostatic Force in a Micromechanical Vibrating Gyroscope

Shock and Vibration ◽

10.1155/2020/8880124 ◽

2020 ◽

Vol 2020 ◽

pp. 1-15

Author(s):

Shuying Hao ◽

Yulun Zhu ◽

Yuhao Song ◽

Qichang Zhang ◽

Jingjing Feng ◽

...

Keyword(s):

Numerical Simulation ◽

Bias Voltage ◽

Electrostatic Force ◽

Dynamic Performance ◽

Great Influence ◽

Critical Parameters ◽

Multiple Time Scales ◽

Multiple Time ◽

Element Analysis ◽

Dc Bias

The electrostatic force nonlinearity caused by fringe effects of the microscale comb will affect the dynamic performance of the micromechanical vibrating gyroscopes (MVGs). In order to reveal the influence mechanism, a class of four-degree-of-freedom (4-DOF) electrostatically driven MVG is considered. The influence of DC bias voltage and comb spacing on the nonlinearity of electrostatic force and the dynamic response of the MVG by using multiple time scales method and numerical simulation are discussed. The results indicate that the electrostatic force nonlinearity causes the system to show stiffness softening. The softening characteristics of the electrostatic force cause the offset of the resonance frequency and a decrease in sensitivity. Although the electrostatic nonlinearity has a great influence on the dynamic behaviour, its influence can be avoided by the reasonable design of the comb spacing and DC bias voltage. There exists a critical value for comb spacing and DC bias voltage. In this paper, determining the critical values is demonstrated by nonlinear dynamics analysis. The results can be supported by the finite element analysis and numerical simulation.

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