Defect engineering in GaAs using high energy light ion irradiation: Role of electronic energy loss

2011 ◽  
Vol 109 (3) ◽  
pp. 033701 ◽  
Author(s):  
D. Kabiraj ◽  
Subhasis Ghosh
Keyword(s):  
Energy Loss ◽  
Ion Irradiation ◽  
High Energy ◽  
Electronic Energy ◽  
Defect Engineering

scholarly journals Ion tracks in silicon formed by much lower energy deposition than the track formation threshold

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
H. Amekura ◽  
M. Toulemonde ◽  
K. Narumi ◽  
R. Li ◽  
A. Chiba ◽  
...  
Keyword(s):  
Nuclear Energy ◽  
Energy Deposition ◽  
Ion Irradiation ◽  
High Energy ◽  
Electronic Energy ◽  
Synergy Effect ◽  
Ion Tracks ◽  
Track Formation ◽  
Low Energies ◽  
High Energy Ions

AbstractDamaged regions of cylindrical shapes called ion tracks, typically in nano-meters wide and tens micro-meters long, are formed along the ion trajectories in many insulators, when high energy ions in the electronic stopping regime are injected. In most cases, the ion tracks were assumed as consequences of dense electronic energy deposition from the high energy ions, except some cases where the synergy effect with the nuclear energy deposition plays an important role. In crystalline Si (c-Si), no tracks have been observed with any monomer ions up to GeV. Tracks are formed in c-Si under 40 MeV fullerene (C60) cluster ion irradiation, which provides much higher energy deposition than monomer ions. The track diameter decreases with decreasing the ion energy until they disappear at an extrapolated value of ~ 17 MeV. However, here we report the track formation of 10 nm in diameter under C60 ion irradiation of 6 MeV, i.e., much lower than the extrapolated threshold. The diameters of 10 nm were comparable to those under 40 MeV C60 irradiation. Furthermore, the tracks formed by 6 MeV C60 irradiation consisted of damaged crystalline, while those formed by 40 MeV C60 irradiation were amorphous. The track formation was observed down to 1 MeV and probably lower with decreasing the track diameters. The track lengths were much shorter than those expected from the drop of Se below the threshold. These track formations at such low energies cannot be explained by the conventional purely electronic energy deposition mechanism, indicating another origin, e.g., the synergy effect between the electronic and nuclear energy depositions, or dual transitions of transient melting and boiling.

scholarly journals A coupled effect of nuclear and electronic energy loss on ion irradiation damage in lithium niobate

2016 ◽  
Vol 105 ◽  
pp. 429-437 ◽  
Author(s):  
P. Liu ◽  
Y. Zhang ◽  
H. Xue ◽  
K. Jin ◽  
M.L. Crespillo ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Energy Loss ◽  
Ion Irradiation ◽  
Electronic Energy ◽  
Irradiation Damage ◽  
Coupled Effect

Understanding High-Energy 75-MeV Sulfur-Ion Irradiation-Induced Degradation in GaN-Based Heterostructures: The Role of the GaN Channel Layer

2021 ◽  
Vol 68 (1) ◽  
pp. 24-28
Author(s):  
Seshagiri Rao Challa ◽  
Nahuel A. Vega ◽  
Nahuel A. Mueller ◽  
Christian Kristukat ◽  
Mario E. Debray ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
High Energy ◽  
Channel Layer

Electronic energy loss-induced effects in Fe85B15amorphous: Alloys irradiated by high energy heavy ions

1989 ◽  
Vol 110 (1-2) ◽  
pp. 109-112 ◽  
Author(s):  
A. Audouard ◽  
E. Balanzat ◽  
J. C. Jousset ◽  
G. Fuchs ◽  
D. Lesueur ◽  
...  
Keyword(s):  
Energy Loss ◽  
Heavy Ions ◽  
High Energy ◽  
Electronic Energy

Epitaxial Crystallisation of Doped Amorphous Silicon

1983 ◽  
Vol 27 ◽  
Author(s):  
R.G. Elliman ◽  
S.T. Johnson ◽  
K.T. Short ◽  
J.S. Williams
Keyword(s):  
Energy Loss ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Irradiation ◽  
Electronic Energy ◽  
Epitaxial Regrowth ◽  
Ion Implanted

ABSTRACTThis paper outlines a model to account for the influence of doping and electronic processes on the solid phase epitaxial regrowth rate of ion implanted (100) silicon. In addition we present data which illustrates good quality epitaxial crystallisation of silicon at 400°C induced by He+ ion irradiation. We tentatively suggest that electronic energy-loss processes may be responsible for this behaviour.

scholarly journals Synergistic effects of nuclear and electronic energy loss in KTaO3 under ion irradiation

AIP Advances ◽  
2017 ◽  
Vol 7 (1) ◽  
pp. 015016 ◽  
Author(s):  
Eva Zarkadoula ◽  
Ke Jin ◽  
Yanwen Zhang ◽  
William J. Weber
Keyword(s):  
Energy Loss ◽  
Ion Irradiation ◽  
Synergistic Effects ◽  
Electronic Energy

High-Energy Heavy-Ion Irradiations of Fe 85 B 15 Amorphous Alloy: Evidence for Electronic Energy Loss Effect

1987 ◽  
Vol 3 (3) ◽  
pp. 327-331 ◽  
Author(s):  
A Audouard ◽  
E Balanzat ◽  
G Fuchs ◽  
J. C Jousset ◽  
D Lesueur ◽  
...  
Keyword(s):  
Amorphous Alloy ◽  
Energy Loss ◽  
Heavy Ion ◽  
High Energy ◽  
Electronic Energy ◽  
Loss Effect
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