Influence of sintering temperature on electrical properties of ZnO varistors

1993 ◽  
Vol 74 (1) ◽  
pp. 695-703 ◽  
Author(s):  
Shr‐Nan Bai ◽  
Tseung‐Yuen Tseng
Keyword(s):  
Electrical Properties ◽  
Sintering Temperature ◽  
Zno Varistors

Effect of Technological Parameters on the Microstructure and Electrical Properties of ZnO Varistors

2013 ◽  
Vol 820 ◽  
pp. 208-211
Author(s):  
Li Li ◽  
Qi Bin Liu
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Leakage Current ◽  
Sintering Temperature ◽  
Voltage Gradient ◽  
Technological Parameters ◽  
Reaction Route ◽  
Conventional Solid State Reaction ◽  
Zno Varistors ◽  
Solid State Reaction Route

To improve voltage-gradient and to reduce the sintering temperature of ZnO varistors, high voltage-gradient ZnO varistors were synthesized with a conventional solid state reaction route. By means of SEM and DC parameter instrument for varistor, the influence of different technological parameters on microstructure, voltage-gradient and leakage current of ZnO varistors was investigated. The experimental results show that by using the process that presintering the additives at 850°C, the density is improved, the voltage-gradient is increased, and the leakage current is decreased. The optimum voltage-gradient and leakage current are 371V/mm and 3μA, respectively.

Study on Microstructure and Electrical Properties of ZnO Varistor Ceramics

2011 ◽  
Vol 415-417 ◽  
pp. 2008-2011 ◽  
Author(s):  
Chang Qi Xia ◽  
Qi Bin Liu ◽  
Mo He
Keyword(s):  
Electrical Properties ◽  
Sintering Temperature ◽  
Spinel Phase ◽  
Voltage Gradient ◽  
X Rays ◽  
Sintering Process ◽  
Varistor Ceramic ◽  
Zno Varistor ◽  
Zno Varistors ◽  
Ceramic Sintering

To obtain ZnO varistors with high voltage gradient, ZnO varistors were fabricated by traditional ceramic sintering technique, which were sintered from 1135 to 1155 °C, the microstructure and properties of varistors were characterized by SEM, X-rays diffraction and DC parameter instrument for varistors. The experimental results show that the spinel phase Zn7Sb2O12 generated during sintering process, very thin amorphous Bi rich films are formed between the ZnO/ZnO grain boundaries, with increasement of sintering temperature, the grain size of ZnO varistor ceramic becomes bigger, the voltage gradient of varistor decreases and the density is improved. The optimized parameters are that when the sintering temperature is at 1140 °C, the voltage gradient of varistor is 301V/mm, the leakage current is 4μA and the density is 96.6%, the comprehensive electrical properties of ZnO varistors reach maximum.

Synthesis of Pr6O11 Doped Zinc Varistors by High-Energy Milling

2010 ◽  
Vol 105-106 ◽  
pp. 314-316
Author(s):  
Guo Quan Qi ◽  
Jian Feng Zhu ◽  
Hai Bo Mao ◽  
Yang Wu ◽  
Hai Bo Yang ◽  
...  
Keyword(s):  
Grain Size ◽  
Electrical Properties ◽  
Milling Time ◽  
Sintering Temperature ◽  
Raw Materials ◽  
High Energy ◽  
Linear Coefficient ◽  
High Energy Milling ◽  
Zno Varistors ◽  
Doped Zno

High voltage zinc varistors was synthesized by high energy milling with Pr6O11 doped ZnO-Bi2O3 system as raw materials. The effects of milling time and sintering temperature on the electrical properties were investigated. The results show that high-energy milling decreases the sintering temperature of the ZnO varistors. The material derived from high-energy milling exhibit high density and good electrical properties at the sintering temperature from 1080 to 1180°C. The samples sintered at 1100 °C have average crystalline grain size of about 5 µm with the optimum values of electrical properties, gradient voltage V1mA is 371 V/mm, leakage current IL is 0.62 µA, non linear coefficient α is 60.

Effect of Sintering Temperature on Electrical Properties of ZnO Varistor Ceramics

2012 ◽  
Vol 442 ◽  
pp. 31-34
Author(s):  
Chang Qi Xia ◽  
Qi Bin Liu ◽  
Mo He
Keyword(s):  
Grain Size ◽  
Electrical Properties ◽  
Leakage Current ◽  
High Voltage ◽  
Sintering Temperature ◽  
Voltage Gradient ◽  
Varistor Ceramic ◽  
Zno Varistor ◽  
Zno Varistors ◽  
Ceramic Sintering

To obtain ZnO varistors with high voltage gradient, ZnO varistors were fabricated by traditional ceramic sintering technique, the effect of different sintering temperature (1135～1155 °C) on electrical properties of ZnO varistors were investigated. The experimental results show that with increasement of sintering temperature, the grain size of ZnO varistor ceramic becomes bigger, the voltage gradient of varistor decreases and the density is improved. When the sintering temperature is at 1135 °C, the voltage gradient of varistor is up to 329V/mm, the leakage current is 8μA and the density is 96.4%. When the sintering temperature is at 1140 °C, the voltage gradient of varistor is 301V/mm, the leakage current is 4μA and the density is 96.6%. Compared the results at 1135 °C with 1140 °C , it is found that the comprehensive electrical properties of ZnO varistors reach maximum at 1140 °C.

Effects of Different Sintering Temperature on the Microstructure and Piezoelectric Properties of Pb(Nb2/3Zn1/3)x(Zr52Ti48)1-XO3 Ceramics

2014 ◽  
Vol 1061-1062 ◽  
pp. 83-86
Author(s):  
Hong Wu ◽  
De Yi Zheng
Keyword(s):  
Electrical Properties ◽  
Electromechanical Coupling ◽  
Piezoelectric Properties ◽  
Sintering Temperature ◽  
Electromechanical Coupling Coefficient ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ceramic Samples ◽  
Xrd Patterns ◽  
The Relationship

In this paper, the effects of different sintering temperature on the microstructure and piezoelectric properties of Pb(Nb2/3Zn1/3)0.03(Zr52Ti48)0.97O3(PNZZT) ceramic samples were investigated. The Pb(Nb2/3Zn1/3)0.03(Zr52Ti48)0.97O3 ceramics materials was prepared by a conventional mixed oxide method. In the period of the experiment, the relationship between crystallographic phase and microstructure were analyzed by X-ray diffraction(XRD) and scanning electron microscopy(SEM) respectively. The XRD patterns shows that all of the ceramic samples are with a tetragonal perovskite structure. Along with sintering temperature increased and the x is 0.03, the grain size gradually become big. Through this experiment, it has been found that when the x is 0.03 and sintered at 1130°C for 2 h, the grains grow well, the grain-boundary intersection of the sample combined well and the porosity of the ceramics decreased, an excellent comprehensive electrical properties of the Pb(Nb2/3Zn1/3)0.03(Zr52Ti48)0.97O3 samples can be obtained. Its best electrical properties are as follows: dielectric constant (ε) is 1105, dielectric loss(tg) is 0.017, electromechanical coupling coefficient (Kp) is 0.287, piezoelectric constant(d33) is 150PC/N

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