scholarly journals Effects of strain energy on the preferred orientation of TiN thin films

1993 ◽  
Vol 74 (3) ◽  
pp. 1692-1696 ◽  
Author(s):  
U. C. Oh ◽  
Jung Ho Je
Keyword(s):  
Thin Films ◽  
Strain Energy ◽  
Preferred Orientation ◽  
Tin Thin Films

Change of the critical thickness in the preferred orientation of TiN films

1995 ◽  
Vol 10 (3) ◽  
pp. 634-639 ◽  
Author(s):  
U.C. Oh ◽  
Jung Ho Je ◽  
Jeong Y. Lee
Keyword(s):  
Strain Energy ◽  
Unit Volume ◽  
Critical Thickness ◽  
Preferred Orientation ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Working Pressure ◽  
Cross Sectional ◽  
Tin Films ◽  
Tin Thin Films

Recently it was observed through cross-sectional TEM that the preferred orientation of the TiN thin film was changed from (200) to (111) with thickness. In this study, the process of the change in the preferred orientation was studied near the critical thickness by x-ray diffraction, and the value of the critical thickness could be estimated. The change of the critical thickness was also investigated with the strain energy per unit volume. The strain energy could be changed by controlling the energy of the bombarding particle, i.e., by adjusting the rf power, the working pressure, and the substrate bias in sputtering. The critical thickness was decreased monotonically in all cases as the energy of the bombarding particle or the strain energy per unit volume was increased. These results surely show the dependence of the change of the preferred orientation on the strain energy in the TiN thin films.

Nano-Structured TiN Thin Films Deposited by Single Ion Beam Reactive Sputtering

2007 ◽  
Vol 555 ◽  
pp. 303-308
Author(s):  
Ž. Bogdanov ◽  
N. Popović ◽  
M. Zlatanović ◽  
B. Goncić ◽  
Z. Rakočević ◽  
...  
Keyword(s):  
Thin Films ◽  
Partial Pressure ◽  
Ion Beam ◽  
Ion Source ◽  
Preferred Orientation ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Substrate Current ◽  
Tin Thin Films ◽  
Negative Substrate Bias

The reactive sputter deposition of TiN thin films onto glass substrate at the ambient temperature using a homemade broad beam argon ion source was investigated in order to deposit the films with nanostructural characteristics. While constant Ar beam energy of 2 keV was used, the N2 partial pressure and the substrate current, adjusted by different accelerator grid potentials (Vacc) were varied. A negative substrate bias voltage (100 V) was additionally applied. The TiN film structure was investigated by XRD and STM methods. All deposited films exhibited (220) preferred orientation, and the change in normalized peak intensity (I220/d), lattice spacing (d220) and full-with at half-maximum (FWHM) were investigated. As a result of higher energy bombardment with 100 V negative substrate bias, compared to the substrate current change with Vacc, nearly constant (220) peak broadening with the increase of N2 partial pressure was obtained. The measured grain diameter (STM and XRD) confirms that the grain size is less than 12 nm, and the (220) preferred orientation was disturbed but not destructed.

Two critical thicknesses in the preferred orientation of TiN thin film

1998 ◽  
Vol 13 (5) ◽  
pp. 1225-1229 ◽  
Author(s):  
U. C. Oh ◽  
Jung Ho Je ◽  
Jeong Y. Lee
Keyword(s):  
Strain Energy ◽  
Strong Dependence ◽  
Middle Layer ◽  
Bottom Layer ◽  
Columnar Structure ◽  
Preferred Orientation ◽  
Cross Sectional ◽  
Tin Film ◽  
Tin Thin Films ◽  
The Cross

The preferred orientation of the TiN film grown by sputter-deposition was studied by the cross-sectional TEM. The preferred orientation was changed from the (200) through the (110), and then finally to the (111) with the film thickness. The cross-sectional microstructure also shows that the film consists of three layers which are all columnar structure. The (111) preferred orientation was observed in the top layer, and the (110) in the middle layer, and finally the (200) in the bottom layer. It is very surprising that the (110) preferred orientation could be observed in a medium thickness region and there are two kinds of critical thicknesses. These results surely show the strong dependence of the change in the preferred orientation on the strain energy in TiN thin films.

scholarly journals Consideration of Deformation of TiN Thin Films with Preferred Orientation Prepared by Ion-Beam-Assisted Deposition.

2001 ◽  
Vol 44 (1) ◽  
pp. 94-99 ◽  
Author(s):  
Toshiyuki HAYASHI ◽  
Akihito MATSUMURO ◽  
Tomohiko WATANABE ◽  
Toshihiko MORI ◽  
Yutaka TAKAHASHI ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Preferred Orientation ◽  
Ion Beam Assisted Deposition ◽  
Tin Thin Films

Ion Beam Assisted Deposition of TiN Thin Films on Si Substrate

2006 ◽  
Vol 518 ◽  
pp. 155-160
Author(s):  
V. Milinović ◽  
M. Milosavljević ◽  
M. Popović ◽  
M. Novaković ◽  
D. Peruško ◽  
...  
Keyword(s):  
Thin Films ◽  
Partial Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Incident Angle ◽  
Ion Beam ◽  
Preferred Orientation ◽  
Thin Layers ◽  
Phase Identification ◽  
Ion Energy ◽  
Tin Thin Films

In this paper we present a study of the formation of TiN thin films during the IBAD process. We have analyzed the effects of process parameters such as Ar+ ion energy, ion incident angle, Ti evaporation rates and partial pressure of N2 on preferred orientation and resistivity of TiN layers. TiN thin films were grown by evaporation of Ti in the presence of N2 and simultaneously bombarded with Ar+ ions. Base pressure in the IBAD chamber was 1⋅10-6 mbar. The partial pressure of Ar during deposition was (3.1 – 6.6)⋅10-6 mbar and partial pressure of N2 was 6.0⋅10-6 - 1.1⋅10-5 mbar. The substrates used were Si (100) wafers. TiN thin layers were deposited to a thickness of 85 – 360 nm at deposition rates of Ti from 0.05 to 0.25nm/s. Argon ion energy was varied from 1.5 to 2.0 keV and the angle of ion beam incidence from 0 to 30o. All samples were analyzed by Rutherford backscattering spectrometry (RBS). The changes in concentration profiles of titanium, nitrogen and silicon were determined with 900 keV He++ ion beam. The RBS spectra were analyzed with the demo version of WiNDF code. We have also used X-ray diffraction (XRD) for phase identification. The resistivity of samples was measured with four-point probe method. The results clearly show that TiN thin layer grows with (111) and (200) preferred orientation, depending on the IBAD deposition parameters. Consequently, the formation of TiN thin layers with wellcontrolled crystalline orientation occurs. Also, it was found that the variations in TiN film resistivity could be mainly attributed to the ion beam induced damage during the IBAD process.

scholarly journals Pressure and Temperature Effects on Stoichiometry and Microstructure of Nitrogen-Rich TiN Thin Films Synthesized via Reactive Magnetron DC-Sputtering

2008 ◽  
Vol 2008 ◽  
pp. 1-9 ◽  
Author(s):  
E. Penilla ◽  
J. Wang
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Xrd Analysis ◽  
Preferred Orientation ◽  
Reactive Magnetron ◽  
Sem Images ◽  
Cross Sectional ◽  
X Ray ◽  
Dc Sputtering ◽  
Tin Thin Films

Nitrogen-rich titanium nitride (TiN) thin films containing excess nitrogen up to 87.0 at.% were produced on (100) Si substrates via the reactive magnetron DC-sputtering of a commercially available 99.995 at.% pure Ti target within an argon-nitrogen (Ar-N2) atmosphere with a 20-to-1 gas ratio. The process pressure (PP) and substrate temperature (TS) at which deposition occurred were varied systematically between 0.26 Pa–1.60 Pa and between15.0∘C–600∘C, respectively, and their effects on the chemical composition, surface morphology, and preferred orientation were characterized by energy dispersive X-ray spectroscopy (EDS), field emission scanning electron microscopy (FE-SEM), and X-ray diffraction (XRD). The EDS analysis confirms increasing nitrogen content with increasingPPandTS. The SEM images reveal a uniform and crystallized surface morphology as well as a closely packed cross-sectional morphology for all crystalline films and a loosely packed cross-sectional morphology for amorphous films. Films produced at lowerPPandTShave a pyramidal surface morphology which transitions to a columnar and stratified structure asPPandTSincrease. The XRD analysis confirms the existence of only theδ-TiN phase and the absence of other nitrides, oxides, and/or sillicides in all cases. It also indicates that at lowerPPandTS, the preferred orientation relative to the substrate is along the (111) planes, and that it transitions to a random orientation along the (200), (220), and (311) planes asPPandTSincrease and these results correlate with and qualify those observed by SEM.

scholarly journals Consideration of Deformation of TiN Thin Films with Preferred Orientation Prepared by lon-beam-assisted Deposition.

1999 ◽  
Vol 65 (636) ◽  
pp. 1818-1823
Author(s):  
Toshiyuki HAYASHI ◽  
Akihito MATSUMURO ◽  
Tomohiko WATANABE ◽  
Toshihiko MORI ◽  
Yutaka TAKAHASHI ◽  
...  
Keyword(s):  
Thin Films ◽  
Preferred Orientation ◽  
Tin Thin Films
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