Change of the critical thickness in the preferred orientation of TiN films

1995 ◽  
Vol 10 (3) ◽  
pp. 634-639 ◽  
Author(s):  
U.C. Oh ◽  
Jung Ho Je ◽  
Jeong Y. Lee
Keyword(s):  
Strain Energy ◽  
Unit Volume ◽  
Critical Thickness ◽  
Preferred Orientation ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Working Pressure ◽  
Cross Sectional ◽  
Tin Films ◽  
Tin Thin Films

Recently it was observed through cross-sectional TEM that the preferred orientation of the TiN thin film was changed from (200) to (111) with thickness. In this study, the process of the change in the preferred orientation was studied near the critical thickness by x-ray diffraction, and the value of the critical thickness could be estimated. The change of the critical thickness was also investigated with the strain energy per unit volume. The strain energy could be changed by controlling the energy of the bombarding particle, i.e., by adjusting the rf power, the working pressure, and the substrate bias in sputtering. The critical thickness was decreased monotonically in all cases as the energy of the bombarding particle or the strain energy per unit volume was increased. These results surely show the dependence of the change of the preferred orientation on the strain energy in the TiN thin films.

Two critical thicknesses in the preferred orientation of TiN thin film

1998 ◽  
Vol 13 (5) ◽  
pp. 1225-1229 ◽  
Author(s):  
U. C. Oh ◽  
Jung Ho Je ◽  
Jeong Y. Lee
Keyword(s):  
Strain Energy ◽  
Strong Dependence ◽  
Middle Layer ◽  
Bottom Layer ◽  
Columnar Structure ◽  
Preferred Orientation ◽  
Cross Sectional ◽  
Tin Film ◽  
Tin Thin Films ◽  
The Cross

The preferred orientation of the TiN film grown by sputter-deposition was studied by the cross-sectional TEM. The preferred orientation was changed from the (200) through the (110), and then finally to the (111) with the film thickness. The cross-sectional microstructure also shows that the film consists of three layers which are all columnar structure. The (111) preferred orientation was observed in the top layer, and the (110) in the middle layer, and finally the (200) in the bottom layer. It is very surprising that the (110) preferred orientation could be observed in a medium thickness region and there are two kinds of critical thicknesses. These results surely show the strong dependence of the change in the preferred orientation on the strain energy in TiN thin films.

Hardness and Texture Evolution of Sputtered TiN Thin Films with Different Thicknesses on Ti6Al4V Substrate

2016 ◽  
Vol 709 ◽  
pp. 91-94
Author(s):  
Na Xiao ◽  
Bo Yang ◽  
Fei Fei Du ◽  
Yan Wu ◽  
Xiang Zhao ◽  
...  
Keyword(s):  
Film Thickness ◽  
Strain Energy ◽  
Texture Evolution ◽  
X Ray Diffraction ◽  
Tin Films ◽  
X Ray ◽  
Tin Film ◽  
Dc Reactive Magnetron Sputtering ◽  
Tin Thin Films ◽  
Scanning Electron

In this present work, TiN films with various thicknesses (from 0.3 μm to 2 μm) were deposited by DC reactive magnetron sputtering on Ti6Al4V substrates. The evolution of texture and microstructure were studied by X-ray diffraction and Scanning Electron Microscopy, respectively. The XRD characterization indicates that the preferred texture of TiN films is changed from (111) to (100) with increasing the film thickness. The microstructure characterization shows that their microstructure transform from continuous into columnar with increasing the TiN film thickness. It is considered these results are arised from the change of overall energy including surface energy and strain energy with the film thickness. The hardness of TiN film increases with increasing the film thickness.

scholarly journals MAGNETRON SPUTTERED NANOCRYSTALLINE TiN THIN FILMS AND CORROSION PROPERTIES

2020 ◽  
Vol 17 (35) ◽  
pp. 164-173
Author(s):  
Muslim Idan HAMIL ◽  
Mohammed K. KHALAF ◽  
Mundher AL-SHAKBAN
Keyword(s):  
Thin Films ◽  
Corrosion Current ◽  
X Ray Diffraction ◽  
Corrosion Properties ◽  
Uncoated Sample ◽  
Tin Films ◽  
Before And After ◽  
Tin Thin Films ◽  
Cohesion Degree ◽  
Thermally Treated

In this report, TiN nanocrystalline thin films were deposited on glass and Ti-6Al-4V substrates using a DC-magnetron sputtering technique. The TiN films were sputtered using a pure Ti target (99.9%) with 40W of power in Ar/N2 gas mixture atmosphere. The structure of the TiN films was characterized by X-Ray diffraction, as prepared films exhibited a (200) preferred orientation, while film annealed at 500 °C shows the (111), (200) and (311). Polycrystalline, cubic, (111)-orientated TiN films were produced by annealing temperature of 500 °C. The effect of deposited temperature on the microstructural morphologies of the thin films was studied by Field Emission Scanning Electron Microscope (FESEM). The particle size of the sputtered TiN films ranged from 50 to 70 nm and was strongly influenced by annealing temperatures, the morphology of the films deposited before and after annealing has a characteristic agglomeration of particles. Potentiodynamic polarization analysis of the TiN films confirms the inverse relationship between polarization resistance and corrosion current. The biocorrosion measurements for TiN films deposited on the Ti-6Al-4V substrate in 3.5% NaCl solution have also been obtained. Clear improvement in the corrosion resistance was observed rather than for untreated, especially for thermally annealed (500 oC) TiN/Ti-6Al-4V samples. The corrosion rate was 0.1458 mm/y for the uncoated sample, while 2.68510-4 mm/y for TiN/Ti-6Al-4V in samples after annealing. The average corrosion potential calculated was - 0.117 V. The results confirmed that coated alloys with 500 °C thermally treated exhibited a better electrochemical behavior compare with uncoated and non-thermally treated alloys possibly due to the better cohesion degree of the coatings.

Measuring the Absorption Coefficients of TiN Thin Films with Different Thickness

2017 ◽  
Vol 904 ◽  
pp. 120-124
Author(s):  
Hao Yu Chu ◽  
Yu Xiong Li ◽  
Cheng Yan Gu ◽  
Chun Ping Jiang
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
Absorption Coefficients ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cathodoluminescence Spectroscopy ◽  
Tin Thin Films ◽  
Tin Metal ◽  
Different Thickness

In this work, different thick TiN thin films were prepared by pulsed laser deposition on GaN substrates at 650°C. The crystal structure and morphology are characterized by X-ray Diffraction and Atomic Force Microscopy. We characterized the sample by cathodoluminescence spectroscopy at room temperature and measured the thickness of the film by a cross-sectional scanning electron microscopy. Combining the attenuation of light intensity and the thickness, the absorption coefficient of the samples can be estimated by the Beer-Lambert law. The absorption coefficients of TiN metal thin film obtained here are closed with each other. The optical properties may not change with increasing thickness.

scholarly journals Pressure and Temperature Effects on Stoichiometry and Microstructure of Nitrogen-Rich TiN Thin Films Synthesized via Reactive Magnetron DC-Sputtering

2008 ◽  
Vol 2008 ◽  
pp. 1-9 ◽  
Author(s):  
E. Penilla ◽  
J. Wang
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Xrd Analysis ◽  
Preferred Orientation ◽  
Reactive Magnetron ◽  
Sem Images ◽  
Cross Sectional ◽  
X Ray ◽  
Dc Sputtering ◽  
Tin Thin Films

Nitrogen-rich titanium nitride (TiN) thin films containing excess nitrogen up to 87.0 at.% were produced on (100) Si substrates via the reactive magnetron DC-sputtering of a commercially available 99.995 at.% pure Ti target within an argon-nitrogen (Ar-N2) atmosphere with a 20-to-1 gas ratio. The process pressure (PP) and substrate temperature (TS) at which deposition occurred were varied systematically between 0.26 Pa–1.60 Pa and between15.0∘C–600∘C, respectively, and their effects on the chemical composition, surface morphology, and preferred orientation were characterized by energy dispersive X-ray spectroscopy (EDS), field emission scanning electron microscopy (FE-SEM), and X-ray diffraction (XRD). The EDS analysis confirms increasing nitrogen content with increasingPPandTS. The SEM images reveal a uniform and crystallized surface morphology as well as a closely packed cross-sectional morphology for all crystalline films and a loosely packed cross-sectional morphology for amorphous films. Films produced at lowerPPandTShave a pyramidal surface morphology which transitions to a columnar and stratified structure asPPandTSincrease. The XRD analysis confirms the existence of only theδ-TiN phase and the absence of other nitrides, oxides, and/or sillicides in all cases. It also indicates that at lowerPPandTS, the preferred orientation relative to the substrate is along the (111) planes, and that it transitions to a random orientation along the (200), (220), and (311) planes asPPandTSincrease and these results correlate with and qualify those observed by SEM.

Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering

1996 ◽  
Vol 11 (10) ◽  
pp. 2458-2462 ◽  
Author(s):  
L. Hultman ◽  
H. Ljungcrantz ◽  
C. Hallin ◽  
E. Janzén ◽  
J-E. Sundgren ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Specific Contact Resistance ◽  
Room Temperature Resistivity ◽  
Reactive Magnetron ◽  
Cross Sectional ◽  
Tin Films ◽  
Transmission Electron ◽  
Specific Contact ◽  
Tin Thin Films

Epitaxial TiN films were grown on cubic (3C)-SiC(001) and hexagonal (6H)-SiC(0001) substrates by ultrahigh vacuum reactive magnetron sputtering from a Ti target in a mixed Ar and N2 discharge at a substrate temperature of 700 °C. Cross-sectional transmission electron microscopy, including high-resolution imaging, showed orientational relationships TiN(001)‖3C-SiC(001), and TiN[110]‖3C-SiC[110], and TiN(111)‖6H-SiC(0001) and . In the latter case, twin-related TiN domains formed as the result of nucleation on SiC terraces with an inequivalent stacking sequence of Si and C. The TiN/SiC interface was locally atomically sharp for both SiC polytypes. Defects in the TiN layers consisted of threading double positioning domain boundaries in TiN(111) on 6H-SiC. Stacking faults in 3C-SiC did not propagate upon growth of TiN. Room-temperature resistivity of TiN films was ρ = 14 μΩ cm for 6H-SiC(0001) and ρ = 17 μΩ cm for 3C-SiC(001) substrates. Specific contact resistance of TiN to 6H-SiC(0001) was 1.3 3 10−3 Ω cm2 for a 6H-SiC substrate with an n-type doping of 5 × 1017 cm−3.

Effect of Heat Treatment on the Microstructures and Electrical Properties of Insb Thin Films

1990 ◽  
Vol 202 ◽  
Author(s):  
P. W. Wang ◽  
S. Yeh ◽  
L. Chang
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Preferred Orientation ◽  
Electrical Mobility ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Thermal Evaporation Method ◽  
Insb Thin Films ◽  
Diffraction Patterns ◽  
Deposited Film

ABSTRACTPolycrystalline InSb thin films have been prepared by two-source thermal evaporation method. The as-deposited randomly oriented thin films develop (111) preferred orientation upon heat treatment of different maximum setting temperatures, T(max)s. Under different T(max)s, the elongate (111) grains rotate gradually the direction of the elongation respect to the thermally oxidized Si(100) substrate.The (111) preferred orientation has been seen from both cross-sectional TEM and X-ray diffraction patterns. The electrical mobility value of the thin film has been measured by the Van der Pauw′s method. A dramatic increase in the electrical mobility from few thousands, for the as-deposited film, to intermediate values of 15,000-30,000 cm2/v-s and the highest value of 36,000 cm2/v-s for thin films subjected to different T(max)s, can be correlated well to the corresponding microstruetures.

Investigation of TiN/TiSi2 Bilayer Thin Films on Si (100) Substrate

1995 ◽  
Vol 402 ◽  
Author(s):  
Y. Shor ◽  
J. Pelleg
Keyword(s):  
Layer Structure ◽  
Reactive Sputtering ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Tin Films ◽  
X Ray ◽  
Resistivity Measurements ◽  
Transmission Electron

AbstractIn this work the conditions of forming a bi – layer structure of TiN/TiSi2 thin film on Si (100) substrate is investigated. Two methods of producing this structure were used: a) Deposition of Ti on Si (100), followed by reactive sputtering to obtain TiN on top of this layer and b) codeposition of Ti and Si on Si (100) and then deposition of TiN by reactive sputtering. The reactive sputtering was carried out in a mixture of N2/Ar with 20% N2. This amount is believed to be optimal for obtaining good quality and stoichiometric TiN films. Annealing is essential to form TiSi2 and it was performed either in the sputtering chamber immediately after the deposition or by rapid thermal annealing (RTA). The structure of the specimens was analyzed by X-ray diffraction using step scanning, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). TEM analysis was done on cross sectional specimens and also electron diffraction results were recorded. Resistivity measurements were performed by four – point probe method. The influence of TiN on the silicide formation was established. The results indicate that in the presence of TiN the phase TiSi2 was obtained, but in its absence Ti5 Si3 is formed under the same conditions of deposition and annealing. The stress distribution was investigated by Hall – Williamson curves and it was found that TiN stabilizes the silicide film and no peeling was observed. The effectiveness of TiN as diffusion barrier against Al and Si penetration was tested at 500°C/lh. It was found, that under these conditions, the TIN/TiSi2 structure is about the same, as before the heat treatment. No Al penetration is observed.

Analysis of Sputtered Zinc Oxide Films

1980 ◽  
Vol 38 ◽  
pp. 416-417
Author(s):  
T. A. Emma ◽  
M. P. Singh
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Piezoelectric Materials ◽  
Oxide Films ◽  
Optical Quality ◽  
Zno Films ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Sputtered Films ◽  
Zinc Oxide Films

Optical quality zinc oxide films have been characterized using reflection electron diffraction (RED), replication electron microscopy (REM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Significant microstructural differences were observed between rf sputtered films and planar magnetron rf sputtered films. Piezoelectric materials have been attractive for applications to integrated optics since they provide an active medium for signal processing. Among the desirable physical characteristics of sputtered ZnO films used for this and related applications are a highly preferred crystallographic texture and relatively smooth surfaces. It has been found that these characteristics are very sensitive to the type and condition of the substrate and to the several sputtering parameters: target, rf power, gas composition and substrate temperature.

Sign in / Sign up

Export Citation Format

Share Document