UV-Sensitive Metal-Semiconductor Photodiodes on 6H-SIC.

1994 ◽  
Vol 339 ◽  
Author(s):  
Christer Fröjdh ◽  
Göran Thungström ◽  
Hans-Erik Nilsson ◽  
C. Sture Petersson
Keyword(s):  
Silicon Carbide ◽  
Optical Properties ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Fabrication Process ◽  
Electrical And Optical Properties ◽  
Peak Sensitivity

ABSTRACTSchottky diodes on Silicon Carbide (SiC) are of interest for many applications because of the relatively simple fabrication process. In this work we have fabricated Schottky diodes by evaporation of Ti on 6H-SiC and measured their electrical and optical properties. Most of the diodes show good rectifying behaviour with low reverse current and an ideality factor below 1.20. The photoresponse of the diodes has been measured in the range 200 – 400 nm. The peak sensitivity was found to be at 270 nm.

Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis

2019 ◽  
Vol 963 ◽  
pp. 511-515
Author(s):  
A. Benjamin Renz ◽  
Vishal Ajit Shah ◽  
Oliver Vavasour ◽  
Yeganeh Bonyadi ◽  
G.W.C Baker ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ideality Factor ◽  
Photoelectron Spectroscopy ◽  
Schottky Diodes ◽  
Control Sample ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
X Ray ◽  
Schottky Rectifier ◽  
Metal Oxide Semiconductor Capacitor

Passivation treatments applied prior to Mo metallisation on Silicon Carbide (SiC) Schottky rectifier and metal-oxide-semiconductor capacitor (MOSCAP) structures are studied. A control sample and two treatments, comprising of an O2 oxidation and a phosphorus pentoxide (P2O5) deposition, were studied. Electrical characterisation results show that P2O5 treatment improves the homogeneity of the diodes, with the ideality factor reducing to 1.02 and the leakage current reducing by three orders of magnitude to 2×10-5 A/cm2. Furthermore, the SBH was lowered by 0.11 eV and the variance of all the P2O5 treated Schottky characteristics over the batch reduced. Characterisation by X-ray photoelectron spectroscopy (XPS) showed that the stoichiometry, the Si:C ratio, of the SiC below the contact increased from 0.93:1 before treatment to 0.97:1 after P2O5 treatment.

Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

1996 ◽  
Vol 423 ◽  
Author(s):  
R. Eckstein ◽  
D. Hofmann ◽  
Y. Makarov ◽  
St. G. Müller ◽  
G. Pensl ◽  
...  
Keyword(s):  
Mass Transfer ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Growth Process ◽  
Numerical Models ◽  
Chemical Processes ◽  
Bulk Crystals ◽  
Electrical And Optical Properties ◽  
Bulk Growth ◽  
Sublimation Growth

AbstractExperimental and numerical analysis have been performed on the sublimation growth process of SiC bulk crystals. Crystallographic, electrical and optical properties of the grown silicon carbide (SIC) crystals have been evaluated by various characterization techniques. Numerical models for the global simulation of SiC bulk growth including heat and mass transfer and chemical processes are applied and experimentally verified.

Pt/n-GaN metal-semiconductor and Pt/HfO2/n-GaN metal-insulator-semiconductor Schottky diodes

2014 ◽  
Vol 1736 ◽  
Author(s):  
Arjun Shetty ◽  
Basanta Roul ◽  
Shruti Mukundan ◽  
Greeshma Chandan ◽  
Lokesh Mohan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Reverse Current ◽  
X Ray Diffraction ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Sapphire Substrates ◽  
Contact Metal

ABSTRACTGallium nitride (n-type) films of thickness 300nm were grown on c-plane sapphire substrates using plasma assisted molecular beam epitaxy (PA-MBE). High resolution X-ray diffraction and photoluminescence measurements were used to confirm the crystalline and optical qualities of the grown films. Metal-semiconductor Schottky diodes were fabricated using Pt as the Schottky metal and Al as the Ohmic metal contact. Metal-insulator-semiconductor Schottky diodes were also fabricated using HfO2 (10nm) as the insulator material. Diode parameters like barrier height and ideality factor were extracted from I-V measurements. Introduction of HfO2 as the insulator layer leads to better rectifying behavior (forward to reverse current ratio improves from 5.1 to 8.9) with a reduction in reverse leakage current (by 7.4 times), increase in barrier height (from 0.62eV to 0.74eV) and a reduction in ideality factor (from 6 to 4.1) of the Schottky diode.

Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method

2012 ◽  
Vol 717-720 ◽  
pp. 129-132 ◽  
Author(s):  
Siva Prasad Kotamraju ◽  
Bharat Krishnan ◽  
Franziska Christine Beyer ◽  
Anne Henry ◽  
Olle Kordina ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
High Purity ◽  
Schottky Diodes ◽  
Donor Concentration ◽  
Electrical And Optical Properties ◽  
Growth Pressure ◽  
Growth Method ◽  
First Time

A reduced growth pressure (down to 10 Torr) was employed for the low-temperature chloro-carbon epitaxial growth. More than two times lower H2 flow rate became possible. The optimal input H2/Si and C/Si ratios were also lower. A significant reduction of the net free donor concentration resulted from the use of the low pressure, delivering partially compensated epilayers with the net free donor concentration below 7x1013 cm-3. Deep levels were characterized in the low-temperature epilayers for the first time. No Z1/2 or EH6/7 centers could be detected by DLTS. No strong D1 photoluminescence signature was observed. The high purity of the obtained epitaxial layers made it possible to use the low-temperature chloro-carbon epitaxial growth to fabricate drift regions of Schottky diodes for the first time. Promising values of the reverse breakdown voltage and the leakage current were obtained from the fabricated devices.

Ideality factor dependence of capacitance and reverse current noise in Au/n-GaAs Schottky diodes with embedded self-assembled InAs quantum dots

2008 ◽  
Vol 5 (12) ◽  
pp. 3617-3621
Author(s):  
N. Arpatzanis ◽  
N. A. Hastas ◽  
C. A. Dimitriadis ◽  
C. Charitidis ◽  
J. D. Song ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Current Noise ◽  
Inas Quantum Dots ◽  
Self Assembled
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