Correlation of the change in transfer characteristics with the interfacial trap densities of amorphous In–Ga–Zn–O thin film transistors under light illumination

2011 ◽  
Vol 98 (23) ◽  
pp. 232102 ◽  
Author(s):  
Jeong Hwan Kim ◽  
Un Ki Kim ◽  
Yoon Jang Chung ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Light Illumination ◽  
Transfer Characteristics

Effect of Illumination on Organic Polymer Thin-Film Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Charge Carriers ◽  
Electrical Performance ◽  
Organic Polymer ◽  
Light Illumination ◽  
Polymer Thin Film ◽  
Channel Region ◽  
White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

Pentacene Thin-film Transistors Fabricated with a Simple Solution Process

2006 ◽  
Vol 937 ◽  
Author(s):  
Yutaka Natsume ◽  
Takashi Minakata
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Solution Process ◽  
Simple Solution ◽  
Trap States ◽  
Solution Processed ◽  
High Crystallinity ◽  
Transfer Characteristics

ABSTRACTWe have succeeded in developing a simple solution process of pentacene thin films without particular precursor materials. High crystallinity and large plate-like grains of the solution-processed thin films were observed with several analyses. The solution-processed pentacene thin-film transistors (TFTs) were also fabricated and exhibited good transfer characteristics with maximum carrier mobility above 1 cm2/Vs. The solution-processed TFTs also indicated a steep subthreshold swing and high stability of the threshold voltage against the storage in the atmosphere. The trap states and the bulk carrier density in the films were evaluated from the transfer characteristics by using the analytical model. We considered that these good properties could be attributed to the high crystallinity and the large grains of the solution-processed thin films.

Crystallization and Evaluation of Non-Stoichiometric Silicon-Carbon Films for Hetero Thin-Film Transistors

1996 ◽  
Vol 452 ◽  
Author(s):  
Kwangsoo Choi ◽  
Masakiyo Matsumura
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Carbon Films ◽  
Light Illumination ◽  
Field Effect Mobility ◽  
Switching Device ◽  
Silicon Carbon ◽  
Experimental Works ◽  
Intense Light

AbstractExperimental works have been reviewed on poly-Si/poly-SiCx hetero TFTs aiming at extremely low off-current even under intense light illumination conditions with reasonable field-effect mobility. The results indicated that the hetero TFT having the stacked poly-Si/poly-SiCx layers is promising as a switching device in matrices

Light-illumination stability of amorphous InGaZnO thin film transistors in oxygen and moisture ambience

2019 ◽  
Vol 153 ◽  
pp. 74-78 ◽  
Author(s):  
Chengyuan Dong ◽  
Jianeng Xu ◽  
Yan Zhou ◽  
Ying Zhang ◽  
Haiting Xie
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Light Illumination ◽  
Amorphous Ingazno

Transfer Characteristics of a-IGZO Thin Film Transistors Prepared with Different RF Powers

2015 ◽  
Vol 10 (4) ◽  
pp. 520-523 ◽  
Author(s):  
Yeon-Hoo Jung ◽  
Kwang-Min Jo ◽  
Se-Yun Kim ◽  
Joon-Hyung Lee ◽  
Jeong-Joo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Transfer Characteristics
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