Low Temperature Grown Graphene on Ultra-Long Copper Nanowire By Carbon-Enclosed Chemical Vapor Deposition As Stable Transparent Conducting Electrodes in Harsh Environments

2016 ◽  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Harsh Environments ◽  
Copper Nanowire ◽  
Transparent Conducting ◽  
Grown Graphene ◽  
Transparent Conducting Electrodes

Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition

2007 ◽  
Vol 515 (5) ◽  
pp. 2921-2925 ◽  
Author(s):  
Chunyu Wang ◽  
Volker Cimalla ◽  
Genady Cherkashinin ◽  
Henry Romanus ◽  
Majdeddin Ali ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Indium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Graphene-coated copper nanowire networks as a highly stable transparent electrode in harsh environments toward efficient electrocatalytic hydrogen evolution reactions

2017 ◽  
Vol 5 (26) ◽  
pp. 13320-13328 ◽  
Author(s):  
Arumugam Manikandan ◽  
Ling Lee ◽  
Yi-Chung Wang ◽  
Chia-Wei Chen ◽  
Yu-Ze Chen ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Graphene Layer ◽  
Chemical Vapor ◽  
Transparent Electrode ◽  
Harsh Environments ◽  
Copper Nanowire ◽  
Transparent Conducting ◽  
Vapor Deposition Technique ◽  
Hydrogen Evolution Reactions ◽  
Nanowire Networks

Copper nanowire networks (NWs) coated with a graphene layer through a carbon-enclosed chemical vapor deposition technique at a low temperature of 400 °C with a low sheet resistance of 23.2 Ω sq−1 and a high transmittance of 83.4%, which is comparable to typical values of tin-doped indium oxide (ITO), as a transparent conducting electrode were demonstrated.

Low-Temperature Chemical Vapor Deposition Growth of Graphene Layers on Copper Substrate Using Camphor Precursor

2020 ◽  
Vol 20 (12) ◽  
pp. 7698-7704
Author(s):  
K. Kavitha ◽  
Akanksha R. Urade ◽  
Gurjinder Kaur ◽  
Indranil Lahiri
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Graphene Layer ◽  
Copper Substrate ◽  
Chemical Vapor ◽  
Large Area ◽  
Chemical Vapor Deposition Growth ◽  
Graphene Layers ◽  
Grown Graphene

A two-step, low-temperature thermal chemical vapor deposition (CVD) process, which uses camphor for synthesizing continuous graphene layer on Cu substrate is reported. The growth process was performed at lower temperature (800 °C) using camphor as the source of carbon. A threezone CVD system was used for controlled heating of precursor, in order to obtain uniform graphene layer. As-grown samples were characterized by X-ray diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM). The results show the presence of 4–5 layers of graphene. As-grown graphene transferred onto a glass substrate through a polymer-free wet-etching process, demonstrated transmittance ~91% in visible spectra. This process of synthesizing large area, 4–5 layer graphene at reduced temperature represents an energy-efficient method of producing graphene for possible applications in opto-electronic industry.

scholarly journals Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Cold Wall ◽  
Polycrystalline Nickel ◽  
Large Area ◽  
Temperature Growth ◽  
Low Temperature Growth
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