An intense metal ion beam source for HIF

1986 ◽  
Author(s):  
Ian G. Brown
Keyword(s):  
Ion Beam ◽  
1983 ◽  
Vol 22 (Part 1, No. 6) ◽  
pp. 1048-1056 ◽  
Author(s):  
Yoshiyuki Sakai ◽  
Itsuo Katsumata ◽  
Takanori Oshio

1990 ◽  
Author(s):  
X. Godechot ◽  
I.G. Brown
Keyword(s):  
Ion Beam ◽  

1995 ◽  
Vol 396 ◽  
Author(s):  
Y. Park ◽  
Y.W. Ko ◽  
M.H. Sohn ◽  
S.I. Kim

AbstractA compact negative metal ion beam source for direct low energy metal ion beam depositions studies in ultra high vacuum (UHV) environment, has been developed. The ion source is based on SKION's Solid State Ion Beam Technology. The secondary negative metal ion beam is effectively produced by primary cesium positive ion bombardment (negative ion yield varies from 0.1-0.5 for carbon). The beam diameter is in the range of 0.2∼3.0 cm depending on the focusing and ion beam energy. The ion source produces negative ion currents of about 0.8 mA/cm2. The energy spread of the ion beam is less then ±5% of the ion beam energy. The energy of negative metal ion beam can be independently controlled in the range of 10-300 eV. Due to the complete solid state ion technology , the source can be operated while maintaining chamber pressures of less then 10-10 Torr.


2014 ◽  
Vol 85 (2) ◽  
pp. 02C104 ◽  
Author(s):  
Igor B. Stepanov ◽  
Alexander I. Ryabchikov ◽  
Denis O. Sivin ◽  
Dan A. Verigin
Keyword(s):  
Ion Beam ◽  

Author(s):  
Hiroshi Inami ◽  
Fumio Fukumaru ◽  
Yutaka Inouchi ◽  
Daisuke Sato ◽  
Kazuhiko Tanaka ◽  
...  
Keyword(s):  
Ion Beam ◽  

Author(s):  
C.H. Wang ◽  
S.P. Chang ◽  
C.F. Chang ◽  
J.Y. Chiou

Abstract Focused ion beam (FIB) is a popular tool for physical failure analysis (FA), especially for circuit repair. FIB is especially useful on advanced technology where the FIB is used to modify the circuit for new layout verification or electrical measurement. The samples are prepared till inter-metal dielectric (IMD), then a hole is dug or a metal is deposited or oxide is deposited by FIB. A common assumption is made that metal under oxide can not be seen by FIB. But a metal ion image is desired for further action. Dual beam, FIB and Scanning Electron Microscope (SEM), tools have a special advantage. When switching back and forth from SEM to FIB the observation has been made that the metal lines can be imaged. The details of this technique will be discussed below.


Coatings ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 820
Author(s):  
Beibei Han ◽  
Mengyuan Yan ◽  
Dongying Ju ◽  
Maorong Chai ◽  
Susumu Sato

The amorphous hydrogenated (a-C:H) film-coated titanium, using different CH4/H2 and deposition times, was prepared by the ion beam deposition (IBD) method, which has the advantage of high adhesion because of the graded interface mixes at the atomic level. The chemical characterizations and corrosion behaviors of a-C:H film were investigated and evaluated by SEM, AFM, Raman spectroscopy, EPMA, TEM and XPS. An a-C:H film-coated titanium was corroded at 0.8 V, 90 °C in a 0.5 mol/L H2SO4 solution for 168 h. The metal ion concentration in the H2SO4 corrosion solution and the potentiodynamic polarization behavior were evaluated. Results indicate that a higher CH4/H2 of 1:0 and a deposition time of 12 h can result in a minimum ID/IG ratio of 0.827, Ra of 5.76 nm, metal ion concentration of 0.34 ppm in the corrosion solution and a corrosion current of 0.23 µA/cm2. The current density in this work meets the DOE’s 2020 target of 1 µA/cm2. Electrical conductivity is inversely proportional to the corrosion resistance. The significant improvement in the corrosion resistance of the a-C:H film was mainly attributed to the increased sp3 element and nanocrystalline TiC phase in the penetration layer. As a result, the a-C:H film-coated titanium at CH4/H2 = 1:0 with improved anti-corrosion behavior creates a great potential for PEMFC bipolar plates.


1999 ◽  
Vol 585 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Vladimir I. Merkulov ◽  
L. R. Baylor ◽  
G. E. Jellison ◽  
D. B. Poker ◽  
...  

AbstractThe principal interests in this work are energetic-beam control of carbon-film properties and the roles of doping and surface morphology in field emission. Carbon films with variable sp3-bonding fraction were deposited on n-type Si substrates by ArF (193 nm) pulsed-laser ablation (PLA) of a pyrolytic graphite target, and by direct metal ion beam deposition (DMIBD) using a primary Cs+ beam to generate the secondary C- deposition beam. The PLA films are undoped while the DMIBD films are doped with Cs. The kinetic energy (KE) of the incident C atoms/ions was controlled and varied over the range from ∼25 eV to ∼175 eV. Earlier studies have shown that C films' sp3-bonding fraction and diamond-like properties can be maximized by using KE values near 90 eV. The films' surface morphology, sp3–bonding fraction, and Cs-content were determined as a function of KE using atomic force microscopy, TEM/EELS, Rutherford backscattering and nuclear reaction measurements, respectively. Field emission (FE) from these very smooth undoped and Cs-containing films is compared with the FE from two types of deliberately nanostructured carbon films, namely hot-filament chemical vapor deposition (HF-CVD) carbon and carbon nanotubes grown by plasma-enhanced CVD. Electron field emission (FE) characteristics were measured using ∼25-μm, ∼5-μm and ∼1-μm diameter probes that were scanned with ∼75 nm resolution in the x-, y-, and z-directions in a vacuum chamber (∼5 × 10-7 torr base pressure) equipped with a video camera for viewing. The hydrogen-free and very smooth a-D or a-C films (with high or low sp3 content, and with or without ∼1% Cs doping) produced by PLD and DMIBD are not good field emitters. Conditioning accompanied by arcing was required to obtain emission, so that their subsequent FE is characteristic of the arc-produced damage site. However, deliberate surface texturing can eliminate the need for conditioning, apparently by geometrical enhancement of the local electric field. But the most promising approach for producing macroscopically flat FE cathodes is to use materials that are highly nanostructured, either by the deposition process (e.g. HF-CVD carbon) or intrinsically (e.g. carbon nanotubes). HF-CVD films were found to combine a number of desirable properties for FE displays and vacuum microelectronics, including the absence of conditioning, low turn-on fields, high emission site density, and apparent stability and durability during limited long-term testing. Preliminary FE measurements revealed that vertically aligned carbon nanotubes are equally promising.


Sign in / Sign up

Export Citation Format

Share Document