scholarly journals Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon

2011 ◽  
Vol 110 (6) ◽  
pp. 063708 ◽  
Author(s):  
F. E. Rougieux ◽  
B. Lim ◽  
J. Schmidt ◽  
M. Forster ◽  
D. Macdonald ◽  
...  
Keyword(s):  
Carrier Density ◽  
Defect Density ◽  
Excess Carrier ◽  
Type Silicon ◽  
Oxygen Related Defect ◽  
Related Defect

scholarly journals The surface recombination velocity and bulk lifetime influences on photogenerated excess carrier density and temperature distributions in n-type silicon

2018 ◽  
Vol 31 (2) ◽  
pp. 313-328 ◽  
Author(s):  
Dragana Markushev ◽  
Dragan Markushev ◽  
Slobodanka Galovic ◽  
Sanja Aleksic ◽  
Dragan Pantic ◽  
...  
Keyword(s):  
Carrier Density ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Excess Carrier ◽  
Experimental Scheme ◽  
Type Silicon ◽  
Temperature Distributions ◽  
Recombination Processes ◽  
Sensitive Function ◽  
Recombination Velocity

The temperature distributions in the n-type silicon circular plate, excited by a frequency-modulated light source from one side, are investigated theoretically in the frequency domain. The influence of the photogenerated excess carrier density on the temperature distributions is considered with respect to the sample thickness, surface quality and carrier lifetime. The presence of the thermalization and non-radiative recombination processes are taken into account. The existence of the fast and slow heat sources in the sample is recognized. It is shown that the temperature distribution on sample surfaces is a sensitive function of an excess carrier density under a bulk and surface recombination. The most favorable values of surface velocities ratio and bulk lifetime are established, assigned for a simpler and more effective analysis of the carrier influence in semiconductors. The photothermal and photoacoustic transmission detection configuration is proposed as a most suitable experimental scheme for the investigation of the excess carrier influence on the silicon surface temperatures.

Recombination Activity and Impact of the Boron–Oxygen-Related Defect in Compensated N-Type Silicon

2011 ◽  
Vol 1 (1) ◽  
pp. 54-58 ◽  
Author(s):  
F. E. Rougieux ◽  
M. Forster ◽  
D. Macdonald ◽  
A. Cuevas ◽  
B. Lim ◽  
...  
Keyword(s):  
Recombination Activity ◽  
Type Silicon ◽  
Oxygen Related Defect ◽  
Related Defect

Burn-In Acceleration Considerations in 130nm and 90nm Products

2005 ◽  
Author(s):  
Nobuyuki Wakai ◽  
Yuji Kobira ◽  
Takashi Setoya ◽  
Tamotsu Oishi ◽  
Shinichi Yamasaki
Keyword(s):  
Failure Analysis ◽  
Shape Parameter ◽  
Defect Density ◽  
Failure Mechanisms ◽  
Effective Procedure ◽  
Time Period ◽  
Related Defect ◽  
The Relationship

Abstract An effective procedure to determine the Burn-In acceleration factors for 130nm and 90 nm processes are discussed in this paper. The relationship among yield, defect density, and reliability, is well known and well documented for defect mechanisms. In particular, it is important to determine the suitable acceleration factors for temperature and voltage to estimate the exact Burn- In conditions needed to screen these defects. The approach in this paper is found to be useful for recent Cu-processes which are difficult to control from a defectivity standpoint. Performing an evaluation with test vehicles of 130nm and 90nm technology, the following acceleration factors were obtained, Ea>0.9ev and β (Beta)>-5.85. In addition, it was determined that a lower defect density gave a lower Weibull shape parameter. As a result of failure analysis, it is found that the main failures in these technologies were caused by particles, and their Weibull shape parameter “m” was changed depending of the related defect density. These factors can be applied for an immature time period where the process and products have failure mechanisms dominated by defects. Thus, an effective Burn-In is possible with classification from the standpoint of defect density, even from a period of technology immaturity.

Exciton and Defect Photoluminescence Signatures in Single Crystal Rubrene

2006 ◽  
Vol 965 ◽  
Author(s):  
Oleg Mitrofanov ◽  
David V Lang ◽  
Christian Kloc ◽  
Theo Siegrist ◽  
Woo-Young So ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Photoluminescence Spectra ◽  
Photoluminescence Band ◽  
Exciton Dissociation ◽  
Acceptor Center ◽  
Oxygen Related Defect ◽  
Recombination Processes ◽  
Photo Conductivity ◽  
Exciton Recombination ◽  
Related Defect

ABSTRACTRadiative recombination processes provide valuable information about exciton dynamics and allow detection of defects in rubrene crystals. We demonstrate that the photoluminescence spectra of crystalline rubrene reflect exciton dissociation through oxygen-related defects in addition to the direct exciton recombination. The defect-assisted exciton dissociation results in a well-defined photoluminescence band. These defects play an important role in charge transport. Dark- and photo-conductivity is higher in rubrene crystals with a large density of the defects. The observations strongly suggest that the oxygen-related defect forms a bandgap state and acts as an acceptor center in crystalline rubrene.

Optical Investigation of Electronic Properties in Bulk and Surface Region of Sublimation-Grown 3C-SiC Crystals

2009 ◽  
Vol 615-617 ◽  
pp. 303-306 ◽  
Author(s):  
Georgios Manolis ◽  
Kęstutis Jarašiūnas ◽  
Irina G. Galben-Sandulache ◽  
Didier Chaussende
Keyword(s):  
Carrier Density ◽  
Defect Density ◽  
Surface Region ◽  
Carrier Dynamics ◽  
Optical Investigation ◽  
Extended Defects ◽  
A Value ◽  
Continuous Feed ◽  
The Given

We applied a picosecond dynamic grating technique for studies of nonequilibrium carrier dynamics in a 0.8 mm thick bulk 3C-SiC crystal grown by the continuous feed physical vapor transport (CF-PVT) on 6H-SiC (0001) substrate. Investigation of carrier dynamics at surface or bulk excitation conditions was performed for excess carrier density in range from ~ 1017 cm-3 to ~ 1020 cm3 using for excitation weakly or strongly absorbed illumination. In DPBs free domains, the bipolar diffusion coefficient and carrier lifetime value at 300K were found gradually increasing with carrier density. The bipolar mobility vs. temperature dependence, μ. ~ T -k, provided a value k = 1.2 - 2 in range T < 100 K, thus indicating a negligible scattering by point and extended defects. These data indicated strong contribution of the carrier-density dependent but not defect-density governed scattering mechanisms, thus indicating high quality of the CF-PVT grown bulk cubic SiC. These studies were found in good correlation with the structural and photoluminescence characterization of the given crystal.

Effects of Hydrogen or Nitrogen on Growth of Oxygen-Related Defects in Germanium

1992 ◽  
Vol 262 ◽  
Author(s):  
Noboru Makihara ◽  
Kazuyoshi Ito ◽  
Kaoru Mizuno ◽  
Kotaro Ono
Keyword(s):  
Electron Irradiation ◽  
Electron Trap ◽  
Hydrogen Ions ◽  
Nitrogen Implantation ◽  
Hydrogen Atoms ◽  
Active Centers ◽  
Defect Migration ◽  
Defect Growth ◽  
Oxygen Related Defect ◽  
Related Defect

ABSTRACTOxygen-doped germanium crystals were used to demonstrate the interaction between implanted hydrogen or nitrogen atoms and the oxygen-related defects. The electron trap at Eo-0.26eV associated with the germanium A-center was found to be formed by electron irradiation. Another level at Eo-0.21eV also was observed on annealing at 120 °C. As for the sample implanted with hydrogen ions following electron irradiation, the trap concentration is four times as large as that for electron irradiation alone. It is probable that the germanium A-centers produced by electron irradiation capture hydrogen atoms and increase electrically active centers. After nitrogen implantation following electron irradiation, the Eo-0.26eV level almost annealed out at 140 °C and the trap at Eo-0.21eV wasn't observed. We propose that the reduction in the oxygen-related defect growth is due to the prevention of defect migration with nitrogen atoms.

On the nature of the oxygen-related defect in aluminum nitride

1990 ◽  
Vol 5 (8) ◽  
pp. 1763-1773 ◽  
Author(s):  
J. H. Harris ◽  
R. A. Youngman ◽  
R. G. Teller
Keyword(s):  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
Lattice Parameter ◽  
Extended Defects ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Oxygen Related Defect ◽  
Diffraction Lattice ◽  
Related Defect ◽  
Oxygen Concentrations

The oxygen-related defect in an aluminum nitride (AIN) single crystal and in polycrystalline ceramics is investigated utilizing photoluminescence spectroscopy, thermal conductivity measurements, x-ray diffraction lattice parameter measurements, and transmission electron microscopy. The results of these measurements indicate that at oxygen concentrations near 0.75 at.%, a transition in the oxygen accommodating defect occurs. On both sides of this transition, simple structural models for the oxygen defect are proposed and shown to be in good agreement with the thermal conductivity and lattice parameter measurements, and to be consistent with the formation of various extended defects (e.g., inversion domain boundaries) at higher oxygen concentrations.

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