1.3 νm InAs/GaAs Quantum Dots Directly CappedWith GaAs Grown By Metal Organic Chemical Vapor Deposition

2003 ◽  
Vol 775 ◽  
Author(s):  
K.F. Huang ◽  
T.P. Hsieh ◽  
N.T. Yeh ◽  
W.J. Ho ◽  
J.I. Chyi ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Peak Wavelength ◽  
Room Temperature Photoluminescence ◽  
Periodic Growth

AbstractSystematic studies of the growth temperature and growth rate effect of the formation of InAs/GaAs quantum dots (QDs) have been demonstrated. These QDs are formed with large InAs coverage (3.0 MLs) and periodic growth interruption via Strnski-Krastonov (S-K) epitaxial growth mode by using metalorganic chemical vapor deposition (MOCVD). The room temperature photoluminescence (PL) spectra show red-shift of peak wavelength by decreasing the InAs growth temperature from 540°C to 500°C. As growth rate increases from 0.05 ML/s to 0.2 ML/s at growth temperature of 500°C, PL linewidth could be narrowed and emission intensity could be increased. These results could be correlated to the In clusters and uniformity of InAs/GaAs QDs observed by scanning electron microscopy (SEM) image. Finally, the room temperature photoluminescence spectra of InAs/GaAs QDs directly capped with GaAs shows peak wavelength of 1.35 μm with narrow linewidth of 30.8 meV is obtained.

Quality and Growth Rate of Hot-wire Chemical Vapor Deposition Epitaxial Si Layers

2008 ◽  
Vol 1066 ◽  
Author(s):  
Charles W Teplin ◽  
Ina T. Martin ◽  
Kim M. Jones ◽  
David Young ◽  
Manuel J. Romero ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Growth Phase ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
High Carrier ◽  
Substrate Temperatures

ABSTRACTFast epitaxial growth of several microns thick Si at glass-compatible temperatures by the hot-wire CVD technique is investigated, for film Si photovoltaic and other applications. Growth temperature determines the growth phase (epitaxial or disordered) and affects the growth rate, possibly due to the different hydrogen coverage. Stable epitaxy proceeds robustly in several different growth chemistry regimes at substrate temperatures above 600°C. The resulting films exhibit low defect concentrations and high carrier mobilities.

Analysis of growth rate of silicon nanowires

2004 ◽  
Vol 832 ◽  
Author(s):  
J. Kikkawa ◽  
Y. Ohno ◽  
S. Takeda
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Silicon Nanowires ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Critical Diameter ◽  
Chemical Vapor ◽  
Diameter Range

ABSTRACTWe have measured the growth rate of silicon nanowires (SiNWs) in the diameter range of 3 to 40 nm (8.4 nm on average), which were grown by chemical vapor deposition (CVD) at temperatures between 365 °C and 495 °C. It is found that SiNWs with smaller diameters grow slower than those with larger ones, and a critical diameter at which growth stops completely exists. The growth rate of the thinner SiNWs stronger depends on growth temperature than that of thicker ones in previous studies. We discuss the dependence by thermodynamics theory.

Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM

2008 ◽  
Vol 600-603 ◽  
pp. 151-154 ◽  
Author(s):  
Han Seok Seo ◽  
Ho Geun Song ◽  
Jeong Hyun Moon ◽  
Jeong Hyuk Yim ◽  
Myeong Sook Oh ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Doping Level ◽  
Chemical Vapor ◽  
Homoepitaxial Growth ◽  
Background Doping ◽  
Source Flow

Homoepitaxial growth of 4H-SiC epilayer by hot-wall chemical vapor deposition using bis-trimethylsilylmethane (BTMSM, C7H20Si2) precursor was investigated. The growth rate of 4H-SiC was investigated as a function of the growth temperature and source flow rate. The FWHM values of epilayers as the growth temperature and source flow rate also investigated. The growth rate of 4H-SiC epilayer grown by hot-wall CVD was 3.0 μm/h and the background doping level of 4H-SiC epilayer was mid 1015/cm3.

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