Quantitative characterization of ion-induced SiO2/Si interface traps by means of MeV He single-ion irradiation
2020 ◽
Vol 67
(12)
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pp. 5315-5321
2021 ◽
Vol 68
(3)
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pp. 1214-1220
Keyword(s):
Keyword(s):
2016 ◽
Vol 49
(2)
◽
pp. 145-153
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