Quantitative characterization of ion-induced SiO2/Si interface traps by means of MeV He single-ion irradiation

1999 ◽  
Vol 85 (11) ◽  
pp. 7814-7818 ◽  
Author(s):  
M. Koh ◽  
I. Ohdomari ◽  
K. Igarashi ◽  
T. Matsukawa ◽  
S. Sawara
2020 ◽  
Vol 67 (12) ◽  
pp. 5315-5321
Author(s):  
Yiming Qu ◽  
Junkang Li ◽  
Mengwei Si ◽  
Xiao Lyu ◽  
Peide D. Ye

2021 ◽  
Vol 68 (3) ◽  
pp. 1214-1220
Author(s):  
Junkang Li ◽  
Mengwei Si ◽  
Yiming Qu ◽  
Xiao Lyu ◽  
Peide D. Ye

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