Quantitative characterization of Si/SiO2 interface traps induced by energetic ions by means of single ion microprobe and single ion beam induced charge imaging

1997 ◽  
Vol 117-118 ◽  
pp. 171-175 ◽  
Author(s):  
M. Koh ◽  
K. Igarashi ◽  
T. Sugimoto ◽  
T. Matsukawa ◽  
S. Mori ◽  
...  
Keyword(s):  
Ion Beam ◽  
Interface Traps ◽  
Ion Microprobe ◽  
Quantitative Characterization ◽  
Energetic Ions ◽  
Induced Charge

A Direct and Quantitative Three-Dimensional Reconstruction of the Internal Structure of Disordered Mesoporous Carbon with Tailored Pore Size

2013 ◽  
Vol 19 (3) ◽  
pp. 745-750 ◽  
Author(s):  
Juan Balach ◽  
Flavio Soldera ◽  
Diego F. Acevedo ◽  
Frank Mücklich ◽  
César A. Barbero
Keyword(s):  
Pore Size ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Quantitative Characterization ◽  
Resorcinol Formaldehyde ◽  
Dual Beam ◽  
Dimensional Reconstruction ◽  
A New Technique

AbstractA new technique that allows direct three-dimensional (3D) investigations of mesopores in carbon materials and quantitative characterization of their physical properties is reported. Focused ion beam nanotomography (FIB-nt) is performed by a serial sectioning procedure with a dual beam FIB-scanning electron microscopy instrument. Mesoporous carbons (MPCs) with tailored mesopore size are produced by carbonization of resorcinol-formaldehyde gels in the presence of a cationic surfactant as a pore stabilizer. A visual 3D morphology representation of disordered porous carbon is shown. Pore size distribution of MPCs is determined by the FIB-nt technique and nitrogen sorption isotherm methods to compare both results. The obtained MPCs exhibit pore sizes of 4.7, 7.2, and 18.3 nm, and a specific surface area of ca. 560 m2/g.

Characterization of Surfaces and Thin Films by Means of an Ion Microprobe Analyzer

1986 ◽  
Vol 75 ◽  
Author(s):  
Eiichi Izumi ◽  
Yoshinori Ikebe ◽  
Hiroyasu Shichi ◽  
Hifumi Tamura
Keyword(s):  
Thin Films ◽  
Depth Profile ◽  
Ion Beam ◽  
Depth Resolution ◽  
Negative Ion ◽  
Plastic Film ◽  
Ion Microprobe ◽  
Monitoring Method ◽  
Secondary Ion

A variety of materials such as semiconductors, metals, and insulators have been analyzed by use of the Hitachi IMA-3 ion microprobe analyzer. From the depth profile of a GaAs/AQ GaAs superlattice(50Å), a depth resolution of 45Å was obtained at 2350Å below the surface. The stable depth profile of a multilayer plastic film was obtained by using the negative ion beam(O) as a primary ion for charge neutralization. Further, the usefulness of the total ion monitoring method for correcting the changing factors of secondary ion intensity is demonstrated.

Quantitative characterization of ion-induced SiO2/Si interface traps by means of MeV He single-ion irradiation

1999 ◽  
Vol 85 (11) ◽  
pp. 7814-7818 ◽  
Author(s):  
M. Koh ◽  
I. Ohdomari ◽  
K. Igarashi ◽  
T. Matsukawa ◽  
S. Sawara
Keyword(s):  
Ion Irradiation ◽  
Interface Traps ◽  
Quantitative Characterization

Lateral micro-ion beam induced charge characterization of chemical vapor deposition diamond

2002 ◽  
Vol 90 (1-2) ◽  
pp. 191-195
Author(s):  
Lu Rongrong ◽  
C. Manfredotti ◽  
F. Fizzotti ◽  
E. Vittone ◽  
A. Logiudice
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Diamond ◽  
Induced Charge

Ion Beam Induced Charge characterization of epitaxial single crystal CVD diamond

2007 ◽  
Vol 16 (4-7) ◽  
pp. 940-943 ◽  
Author(s):  
C. Manfredotti ◽  
M. Jaksic ◽  
S. Medunic ◽  
A. Lo Giudice ◽  
Y. Garino ◽  
...  
Keyword(s):  
Single Crystal ◽  
Ion Beam ◽  
Cvd Diamond ◽  
Induced Charge

Three-Dimensional Characterization of Pigment Dispersion in Dried Paint Films Using Focused Ion Beam–Scanning Electron Microscopy

2012 ◽  
Vol 18 (2) ◽  
pp. 266-271 ◽  
Author(s):  
Jui-Ching Lin ◽  
William Heeschen ◽  
John Reffner ◽  
John Hook
Keyword(s):  
Image Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Pigment Dispersion ◽  
Beam Scanning ◽  
Quantitative Characterization ◽  
Paint Films ◽  
Scanning Electron

AbstractThe combination of integrated focused ion beam–scanning electron microscope (FIB-SEM) serial sectioning and imaging techniques with image analysis provided quantitative characterization of three-dimensional (3D) pigment dispersion in dried paint films. The focused ion beam in a FIB-SEM dual beam system enables great control in slicing paints, and the sectioning process can be synchronized with SEM imaging providing high quality serial cross-section images for 3D reconstruction. Application of Euclidean distance map and ultimate eroded points image analysis methods can provide quantitative characterization of 3D particle distribution. It is concluded that 3D measurement of binder distribution in paints is effective to characterize the order of pigment dispersion in dried paint films.

Quantitative Characterization of Interface Traps in Ferroelectric/Dielectric Stack Using Conductance Method

2020 ◽  
Vol 67 (12) ◽  
pp. 5315-5321
Author(s):  
Yiming Qu ◽  
Junkang Li ◽  
Mengwei Si ◽  
Xiao Lyu ◽  
Peide D. Ye
Keyword(s):  
Interface Traps ◽  
Quantitative Characterization ◽  
Conductance Method

scholarly journals Semiconductor Characterization by Scanning Ion Beam Induced Charge (IBIC) Microscopy

2013 ◽  
Vol 2013 ◽  
pp. 1-17 ◽  
Author(s):  
Ettore Vittone
Keyword(s):  
Theoretical Model ◽  
Ion Beam ◽  
Ion Beams ◽  
Semiconductor Materials ◽  
Current Status ◽  
Free Carriers ◽  
Microscopy Technique ◽  
Comprehensive Survey ◽  
Induced Charge

The ion beam induced charge (IBIC) technique is a scanning microscopy technique which uses finely focused MeV ion beams as probes to measure and image the transport properties of semiconductor materials and devices. Its success stems from the combination of three main factors: the first is strictly technical and lies in the availability of laboratories and expertise around the world to provide scanning MeV ion beams focused down to submicrometer spots. The second reason stems from the peculiarity of MeV ion interaction with matter, due to the ability to penetrate tens of micrometers with reduced scattering and to excite a high number of free carriers to produce a measurable charge pulse from each incident ion. Last, but not least, is the availability of a robust theoretical model able to extract from the measurements all the parameters for an exhaustive characterization of the semiconductor. This paper is focused on these two latter issues, which are examined by reviewing the current status of IBIC by a comprehensive survey of the theoretical model and remarkable examples of IBIC applications and of ancillary techniques to the study of advanced semiconductor materials and devices.

Sign in / Sign up

Export Citation Format

Share Document