Scanning secondary-electron microscopy on ferroelectric domains and domain walls in YMnO3

The intestinal roundworm of swine is pinkish in color and about the diameter of a lead pencil. Adult worms, taken from parasitized swine, frequently were observed with macroscopic lesions on their cuticule. Those possessing such lesions were rinsed in distilled water, and cylindrical segments of the affected areas were removed. Some of the segments were fixed in buffered formalin before freeze-drying; others were freeze-dried immediately. Initially, specimens were quenched in liquid freon followed by immersion in liquid nitrogen. They were then placed in ampuoles in a freezer at −45C and sublimated by vacuum until dry. After the specimens appeared dry, the freezer was allowed to come to room temperature slowly while the vacuum was maintained. The dried specimens were attached to metal pegs with conductive silver paint and placed in a vacuum evaporator on a rotating tilting stage. They were then coated by evaporating an alloy of 20% palladium and 80% gold to a thickness of approximately 300 A°. The specimens were examined by secondary electron emmission in a scanning electron microscope.

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High Resolution Low Loss Microscopy of Crystalline Surfaces

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s1431927600000696 ◽

1980 ◽

Vol 38 ◽

pp. 162-163

Author(s):

William Krakow ◽

Alec N. Broers

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

Surface Topography ◽

Secondary Electron ◽

Objective Lens ◽

Surface Imaging ◽

Low Loss ◽

Fine Grained ◽

Scanning Electron ◽

Crystalline Surfaces

Low-loss scanning electron microscopy can be used to investigate the surface topography of solid specimens and provides enhanced image contrast over secondary electron images. A high resolution-condenser objective lens has allowed the low-loss technique to resolve separations of Au nucleii of 50Å and smaller dimensions of 25Å in samples coated with a fine grained carbon-Au-palladium layer. An estimate of the surface topography of fine grained vapor deposited materials (20 - 100Å) and the surface topography of underlying single crystal Si in the 1000 - 2000Å range has also been investigated. Surface imaging has also been performed on single crystals using diffracted electrons scattered through 10−2 rad in a conventional TEM. However, severe tilting of the specimen is required which degrades the resolution 15 to 100 fold due to image forshortening.

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Forward growth of ferroelectric domains with charged domain walls. Local switching on non-polar cuts

Journal of Applied Physics ◽

10.1063/5.0037680 ◽

2021 ◽

Vol 129 (4) ◽

pp. 044103

Author(s):

V. Ya. Shur ◽

E. V. Pelegova ◽

A. P. Turygin ◽

M. S. Kosobokov ◽

Yu. M. Alikin

Keyword(s):

Domain Walls ◽

Ferroelectric Domains

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A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient

MRS Proceedings ◽

10.1557/proc-815-j1.5 ◽

2004 ◽

Vol 815 ◽

Cited By ~ 3

Author(s):

S. Rao ◽

S.E. Saddow ◽

F. Bergamini ◽

R. Nipoti ◽

Y. Emirov ◽

...

Keyword(s):

Electron Microscopy ◽

Atomic Force Microscopy ◽

Secondary Electron ◽

High Dose ◽

Rf Power ◽

Plan View ◽

Force Microscopy ◽

Atomic Force ◽

Process Pressure ◽

Robust Process

AbstractHigh-dose Al implants in n-type epitaxial layers have been successfully annealed at 1600°C without any evidence of step bunching. Anneals were conducted in a silane ambient and at a process pressure of 150 Torr. Silane, 3% premixed in 97% UHP Ar, was further diluted in a 6 slm Ar carrier gas and introduced into a CVD reactor where the sample was heated via RF induction. A 30 minute anneal was performed followed by a purge in Ar at which time the RF power was switched off. The samples were then studied via plan-view secondary electron microscopy (SEM) and atomic force microscopy (AFM). The resulting surface morphology was step- free and flat.

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Ambient Variable Pressure Field Emission Scanning Electron Microscopy for Trichome Profiling of Plectranthus tomentosa by Secondary Electron Imaging

Applied Microscopy ◽

10.9729/am.2013.43.1.34 ◽

2013 ◽

Vol 43 (1) ◽

pp. 34-39 ◽

Cited By ~ 4

Author(s):

Ki Woo Kim

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Field Emission ◽

Secondary Electron ◽

Pressure Field ◽

Variable Pressure ◽

Electron Imaging ◽

Scanning Electron

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Dielectric Anisotropy in Partially Grain-Oriented Bi2VO5.5Ceramics

Active and Passive Electronic Components ◽

10.1155/1995/85454 ◽

1995 ◽

Vol 18 (3) ◽

pp. 137-144 ◽

Cited By ~ 1

Author(s):

K. V. R. Prasad ◽

K. B. R. Varma

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Grain Orientation ◽

Hysteresis Loops ◽

Dielectric Constants ◽

Dielectric Anisotropy ◽

Ferroelectric Domains ◽

Ferroelectric Hysteresis ◽

Microstructural Studies ◽

Scanning Electron

Ceramics obtained from quenching melts of prereacted polycrystalline Bi2V5.5exhibit grain orientation (~ 55%). Microstructural studies carried out using scanning electron microscopy (SEM) on subsequently annealed ceramics show ferroelectric domains. These post-annealed ceramics possess dielectric anisotropies of about 1:1.2 at 300 K and 1:4.3 in the vicinity of the Curie temperature (~ 730 K) between the directions parallel and perpendicular to the quenching direction. The dielectric constants of the samples, obtained by quenching the melts, are higher than that of the post-annealed ceramics. Electrically poled and thermally cycled samples of both as-quenched and post-annealed exhibit ferroelectric hysteresis loops at 300 K.

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