scholarly journals Forward growth of ferroelectric domains with charged domain walls. Local switching on non-polar cuts

2021 ◽  
Vol 129 (4) ◽  
pp. 044103
Author(s):  
V. Ya. Shur ◽  
E. V. Pelegova ◽  
A. P. Turygin ◽  
M. S. Kosobokov ◽  
Yu. M. Alikin
Keyword(s):  
Domain Walls ◽  
Ferroelectric Domains

scholarly journals Structure and Dynamics of Ferroelectric Domains in Polycrystalline Pb(Fe1/2Nb1/2)O3

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1327 ◽  
Author(s):  
Ursic ◽  
Bencan ◽  
Prah ◽  
Dragomir ◽  
Malic
Keyword(s):  
Domain Wall ◽  
Ambient Temperature ◽  
Domain Structure ◽  
Domain Walls ◽  
Domain Switching ◽  
Piezoresponse Force Microscopy ◽  
Paraelectric Phase Transition ◽  
Force Microscopy ◽  
Ferroelectric Domains

A complex domain structure with variations in the morphology is observed at ambient temperature in monoclinic Pb(Fe1/2Nb1/2)O3. Using electron microscopy and piezoresponse force microscopy, it is possible to reveal micrometre-sized wedge, lamellar-like, and irregularly shaped domains. By increasing the temperature, the domain structure persists up to 80 °C, and then starts to disappear at around 100 °C due to the proximity of the ferroelectric–paraelectric phase transition, in agreement with macroscopic dielectric measurements. In order to understand to what degree domain switching can occur in the ceramic, the mobility of the domain walls was studied at ambient temperature. The in situ poling experiment performed using piezoresponse force microscopy resulted in an almost perfectly poled area, providing evidence that all types of domains can be easily switched. By poling half an area with 20 V and the other half with −20 V, two domains separated by a straight domain wall were created, indicating that Pb(Fe1/2Nb1/2)O3 is a promising material for domain-wall engineering.

Synchrotron X-Ray Topographic Study of Defects in High Quality, Flux Grown Ktiopo4 Single Crystals

1993 ◽  
Vol 307 ◽  
Author(s):  
S. Wang ◽  
M. Dudley ◽  
L. K. Cheng ◽  
J. D. Bierlein
Keyword(s):  
Detailed Analysis ◽  
Single Crystals ◽  
Domain Walls ◽  
Defect Structures ◽  
Growth Sector ◽  
High Quality ◽  
X Ray ◽  
Free Region ◽  
Ferroelectric Domains ◽  
Section Topography

ABSTRACTDefect structures in large, high quality flux-grown KTP single crystals have been studied by using synchrotron white beam X-ray topography. Growth dislocations, inclusions, growth sector boundaries, growth bands and surface micro-scratches were imaged. A number of planar defects in the dislocation-free region are imaged and determined to be inversion twin lamellae (lamellar ferroelectric domains) which have never been previously reported in KTP crystals. These inversion twin lamellae were also studied by section topography. Detailed analysis of observed contrast revealed that the domain walls bounding the lamellae are faulted with a fault vector of ½[0±1±1]. This fault vector seems to be consistent with the atomic structure of KTP. A detailed analysis is presented and discussed.

Scanning secondary-electron microscopy on ferroelectric domains and domain walls in YMnO3

2012 ◽  
Vol 100 (15) ◽  
pp. 152903 ◽  
Author(s):  
J. Li ◽  
H. X. Yang ◽  
H. F. Tian ◽  
C. Ma ◽  
S. Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Secondary Electron ◽  
Domain Walls ◽  
Ferroelectric Domains

scholarly journals Microwave conductivity of ferroelectric domains and domain walls in a hexagonal rare-earth ferrite

2018 ◽  
Vol 98 (8) ◽  
Author(s):  
Xiaoyu Wu ◽  
Kai Du ◽  
Lu Zheng ◽  
Di Wu ◽  
Sang-Wook Cheong ◽  
...  
Keyword(s):  
Rare Earth ◽  
Domain Walls ◽  
Microwave Conductivity ◽  
Ferroelectric Domains

scholarly journals Formation and manipulation of domain walls with 2 nm domain periodicity in BaTiO3 without contact electrodes

Nanoscale ◽  
2020 ◽  
Vol 12 (20) ◽  
pp. 11136-11142
Author(s):  
Maya Barzilay ◽  
Yachin Ivry
Keyword(s):  
Domain Walls ◽  
Ferroelectric Domains ◽  
Contact Electrodes

In situ contactless formation and switching of two nanometre periodic ferroelectric domains in BaTiO3.

Size Effects and Domains in Ferroelectric Thin Film Actuators

1996 ◽  
Vol 433 ◽  
Author(s):  
S. Trolier-Mckinstry ◽  
C. A. Randall ◽  
J. P. Maria ◽  
C. Theis ◽  
D. G. Schlom ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Domain Walls ◽  
Sol Gel ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Thin Films ◽  
Grain Sizes ◽  
Average Grain Size ◽  
Ferroelectric Domains ◽  
Gel Processing

AbstractFerroelectric thin films typically differ from bulk ceramics in terms of both the average grain size and the degree of stress imposed on the film by the substrate. Studies on bulk ceramics have demonstrated that the number of domain variants within grains depends on the grain size for sizes <˜lμm. This can diminish the poling efficiency of the material. Since most thin films show primary grain sizes well below a micron, similar effects should be observed in films. In addition, since the perovskite ferroelectrics contain ferroelastic as well as ferroelectric domains, it seems clear that stress in thin films may markedly alter the degree to which domain walls contribute to the observed properties. In this paper, the relative importance of these factors are discussed for several types of ferroelectric thin films. Films have been prepared by pulsed laser deposition, magnetron sputtering, and by sol-gel processing. It has been found that epitaxial BaTiO3 films are ferroelectric at 77K down to thicknesses as low as ˜ 60nm. Data on the low and high field electrical properties are reported as a function of temperature, the film crystallinity, and film thickness for representative perovskite films.

scholarly journals Electric-field-driven dynamics of magnetic domain walls in magnetic nanowires patterned on ferroelectric domains

2016 ◽  
Vol 18 (3) ◽  
pp. 033027 ◽  
Author(s):  
Ben Van de Wiele ◽  
Jonathan Leliaert ◽  
Kévin J A Franke ◽  
Sebastiaan van Dijken
Keyword(s):  
Electric Field ◽  
Domain Walls ◽  
Magnetic Domain ◽  
Magnetic Nanowires ◽  
Ferroelectric Domains ◽  
Magnetic Domain Walls

scholarly journals Interfacial ferroelectricity in marginally twisted 2D semiconductors

2021 ◽  
Author(s):  
Astrid Weston ◽  
Eli Castanon ◽  
Vladimir Enaldiev ◽  
Fabio Ferreira ◽  
Shubhadeep Bhattacharjee ◽  
...  
Keyword(s):  
Room Temperature ◽  
Domain Walls ◽  
Field Effect Transistors ◽  
Theoretical Calculations ◽  
Bending Rigidity ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
2D Semiconductors ◽  
Ferroelectric Domains ◽  
Out Of Plane

Abstract Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarisation arranged into a twist-controlled network. The latter can be moved by applying out-of-plane electrical fields, as visualized in situ using channelling contrast electron microscopy. The interfacial charge transfer for the observed ferroelectric domains is quantified using Kelvin probe force microscopy and agrees well with theoretical calculations. The movement of domain walls and their bending rigidity also agrees well with our modelling results. Furthermore, we demonstrate proof-of-principle field-effect transistors, where the channel resistance exhibits a pronounced hysteresis governed by pinning of ferroelectric domain walls. Our results show a potential venue towards room temperature electronic and optoelectronic semiconductor devices with built-in ferroelectric memory functions.

Microstructure and Ferroelectric Domains of SrBi2Ta1.6Nb0.4O9

2007 ◽  
Vol 353-358 ◽  
pp. 3136-3139
Author(s):  
Hua Ke ◽  
Xiao Jing Kou ◽  
Zhe Lu ◽  
He Jun Li ◽  
Wen Wang ◽  
...  
Keyword(s):  
Domain Walls ◽  
Large Strain ◽  
Large Strains ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Constants ◽  
Transmission Electron ◽  
Ferroelectric Domains ◽  
Diffraction Patterns ◽  
Relationship Of

The microstructure and ferroelectric domains of SrBi2Ta1.6Nb0.4O9 ceramics were investigated by means of X-ray diffraction (XRD), transmission electron microscopy (TEM) equipped with energy dispersive spectroscopy (EDS). The X-ray diffraction patterns show that the lattice constants a and b decrease, and c increases by doping with Nb into SBT sample. Accordingly, it has large strain and lattice distortion in the lattice This suggests that the Nb atoms partially occupy the location of the Ta atoms in the lattice. From TEM observations, the grains show (008) preferred orientations in the sample, which agrees well with the XRD results. The 90° domain walls are identified by the 90° rotation relationship of the electron diffraction pattern about the [001] zone axis. The 180° domain walls and anti-phase boundaries (APBs) in Nb-doped SBT ceramics are also observed, which are irregularly shaped and highly curved. The traditional α-fringes can be found in the Nb-doped SBT ceramics, which are the evidence of large strains in the lattice.

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