scholarly journals Monolithically integrated, resonant-cavity-enhanced dual-band mid-infrared photodetector on silicon

2012 ◽  
Vol 100 (21) ◽  
pp. 211106 ◽  
Author(s):  
Jianfei Wang ◽  
Timothy Zens ◽  
Juejun Hu ◽  
Piotr Becla ◽  
Lionel C. Kimerling ◽  
...  
2020 ◽  
Vol 9 (1) ◽  
pp. 27
Author(s):  
Zhao Chen ◽  
Yudong Weng ◽  
Junku Liu ◽  
Nan Guo ◽  
Yaolun Yu ◽  
...  

1997 ◽  
Vol 484 ◽  
Author(s):  
D. K. Sengupta ◽  
S. D. Gunapala ◽  
S. V. Bandara ◽  
F. Pool ◽  
J. K. Liu ◽  
...  

AbstractA monolithic quantum well infrared photodetector (QWIP) structure has been presented that is suitable for dual bands in the two atmospheric transmission windows of 3 – 5.3 μm and 7.5 – 14μm, respectively. The proposed structure employs dual stacked, strain InGaAs/AlGaAs and latticematched GaAs/AlGaAs quantum well infrared photodetector for mid wavelength and long wavelength detection. The response peak of the strain InGaAs/AlGaAs quantum well is at 4.9 μm and the lattice-matched GaAs/AlGaAs is at 10.5μm; their peak sensitivities are in the spectral regions of 3 – 5.3mu;m and 7.5 – 14μm. The peak responsivity when the dual-band QWIP is biased at 5 Volts is ∼0.065A/W at 4.9μm and ∼0.006A/W at 10.5μm; at this voltage the dual-band QWIP is more sensitive at the shorter wavelengths due to its larger impedance thus exhibiting wavelength tunability characteristics with bias. Additionally, single colored 4.9 and 10.5μm QWIPs were fabricated from the dual-band QWIP structure to study the bias-dependent behavior and also to understand the effects of growing the strain layer InGaAs/AlGaAs QWIP on top of the lattice-matched GaAs/AlGaAs QWIP. In summary, two stack dual-band QWIPs using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells have been demonstrated with peak spectral sensitivities in the spectral region of 3 – 5.3μm and 7.5 – 14μm. Also, the voltage tunable dual-band detection have been realized for this kind of QWIP structure.


2010 ◽  
Vol 18 (12) ◽  
pp. 12890 ◽  
Author(s):  
Jianfei Wang ◽  
Juejun Hu ◽  
Piotr Becla ◽  
Anuradha M. Agarwal ◽  
Lionel C. Kimerling

2016 ◽  
Vol 55 (9) ◽  
pp. 2169 ◽  
Author(s):  
You Lü ◽  
Xin He ◽  
Zhong-Hui Wei ◽  
Zhi-Yuan Sun ◽  
Song-Tao Chang

2007 ◽  
Vol 50 (2-3) ◽  
pp. 211-216 ◽  
Author(s):  
S.V. Bandara ◽  
S.D. Gunapala ◽  
D.Z. Ting ◽  
J.K. Liu ◽  
C.J. Hill ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2695
Author(s):  
Chang Liu ◽  
Xuan Zuo ◽  
Shaohui Xu ◽  
Lianwei Wang ◽  
Dayuan Xiong

We propose a stacked dual-band quantum well infrared photodetector (QWIP) integrated with a double-layer gold disk. Two 10-period quantum wells (QW) operating at different wavelengths are stacked together, and gold nano-disks are integrated on their respective surfaces. Numerical calculations by finite difference time domain (FDTD) showed that the best enhancement can be achieved at 13.2 and 11.0 µm. By integrating two metal disks, two plasmon microcavity structures can be formed with the substrate to excite localized surface plasmons (LSP) so that the vertically incident infrared light can be converted into electric field components perpendicular to the growth direction of the quantum well (EZ). The EZ electric field component can be enhanced up to 20 times compared to the incident light, and it is four times that of the traditional two-dimensional hole array (2DHA) grating. We calculated the enhancement factor and coupling efficiency of the device in the active region of the quantum well. The enhancement factor of the active region of the quantum well on the top layer remains above 25 at the wavelength of 13.2 μm, and the enhancement factor can reach a maximum of 45. Under this condition, the coupling efficiency of the device reaches 2800%. At the wavelength of 11.0 μm, the enhancement factor of the active region of the quantum well at the bottom is maintained above 6, and the maximum can reach about 16, and the coupling efficiency of the device reaches 800%. We also optimized the structural parameters and explored the influence of structural changes on the coupling efficiency. When the radius (r1, r2) of the two metal disks increases, the maximum coupling efficiency will be red-shifted as the wavelength increases. The double-layer gold disk structure we designed greatly enhances the infrared coupling of the two quantum well layers working at different wavelengths in the dual-band quantum well infrared photodetector. The structure we designed can be used in stacked dual-band quantum well infrared photodetectors, and the active regions of quantum wells working at two wavelengths can enhance the photoelectric coupling, and the enhancement effect is significant. Compared with the traditional optical coupling structure, the structure we proposed is simpler in process and has a more significant enhancement effect, which can meet the requirements of working in complex environments such as firefighting, night vision, and medical treatment.


Optica ◽  
2016 ◽  
Vol 3 (9) ◽  
pp. 979 ◽  
Author(s):  
Xuechao Yu ◽  
Zhaogang Dong ◽  
Joel K W Yang ◽  
Qi Jie Wang

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