Experimental observation on the Fermi level shift in polycrystalline Al-doped ZnO films

2012 ◽  
Vol 112 (1) ◽  
pp. 013718 ◽  
Author(s):  
Junjun Jia ◽  
Aiko Takasaki ◽  
Nobuto Oka ◽  
Yuzo Shigesato
Keyword(s):  
Fermi Level ◽  
Experimental Observation ◽  
Zno Films ◽  
Level Shift ◽  
Fermi Level Shift ◽  
Doped Zno

Contribution of the Fermi Level Shift to the Low Temperature Magnetoresistance in α-Si:H

1982 ◽  
Vol 113 (1) ◽  
pp. K39-K42 ◽  
Author(s):  
P. Kuivalainen ◽  
J. Heleskivi ◽  
M. Leppihalme
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Level Shift ◽  
Fermi Level Shift

Fermi Level Shift in Photoconductive Organic Pigment Films Measured by Kelvin Vibrating Capacitor Method

1995 ◽  
Vol 34 (Part 1, No. 7B) ◽  
pp. 3803-3807 ◽  
Author(s):  
Masahiro Hiramoto ◽  
Kiyoaki Ihara ◽  
Masaaki Yokoyama
Keyword(s):  
Fermi Level ◽  
Level Shift ◽  
Organic Pigment ◽  
Fermi Level Shift

High energy photon induced Fermi-level shift of Ba 0.5 Sr 0.5 TiO 3 thin films

2017 ◽  
Vol 639 ◽  
pp. 107-112 ◽  
Author(s):  
Surendra Singh Barala ◽  
Vijendra Singh Bhati ◽  
Mahesh Kumar
Keyword(s):  
Thin Films ◽  
Fermi Level ◽  
High Energy ◽  
Level Shift ◽  
High Energy Photon ◽  
Energy Photon ◽  
Fermi Level Shift

pH-Responsive carbon dots with red emission for real-time and visual detection of amines

2020 ◽  
Vol 8 (33) ◽  
pp. 11563-11571
Author(s):  
Xiaoqin Zhang ◽  
Chongyuan Chen ◽  
Dongping Peng ◽  
Yizi Zhou ◽  
Jianle Zhuang ◽  
...  
Keyword(s):  
Fermi Level ◽  
Real Time ◽  
Carbon Dots ◽  
Visual Detection ◽  
Level Shift ◽  
Ph Responsive ◽  
Red Emission ◽  
The Real ◽  
Fermi Level Shift

The pH-responsive emission of R-CDs with H-aggregation and Fermi level shift has been applied in the real-time and visual detection of amines.

The Increased Response Time in Hydrogenated Microcrystalline Silicon - A Fermi Level Effect or a Structural Effect in a Grainy Material?

1996 ◽  
Vol 420 ◽  
Author(s):  
S. Grebner ◽  
P. Popovic ◽  
J. Furlan ◽  
Q. Gu ◽  
R. Schwarz
Keyword(s):  
Fermi Level ◽  
Structural Effect ◽  
Level Shift ◽  
Microcrystalline Silicon ◽  
One Dimensional ◽  
Fermi Level Shift ◽  
Multiple Trapping ◽  
Multiple Trapping Model ◽  
Simulation Based ◽  
Level Effect

AbstractThe typical photocurrent decay time τR in intrinsic prepared hydrogenated microcrystalline silicon (μc-Si:H) is around lms similar to its n-doped amorphous counterpart (a-Si:H:P). Depending on the crystalline fraction Xc, the μc-Si:H films show an activation energy near to or below 0.5eV. To find out if this analogy ofτR could be due to a Fermi level shift or to the grainy structure in gc-Si:H films, we have studied the behaviour of τR in doped a-Si:H and gc-Si:H films of different XC. One-dimensional numerical simulation based on the Multiple Trapping Model (MTM) can explain this increase in terms of a Fermi level shift towards the conduction band. On the other hand, detailed measurements for temperatures from 100 to 400 K point to carrier trapping in deep states, most probably located at grain boundaries.

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