pH-Responsive carbon dots with red emission for real-time and visual detection of amines

2020 ◽  
Vol 8 (33) ◽  
pp. 11563-11571
Author(s):  
Xiaoqin Zhang ◽  
Chongyuan Chen ◽  
Dongping Peng ◽  
Yizi Zhou ◽  
Jianle Zhuang ◽  
...  
Keyword(s):  
Fermi Level ◽  
Real Time ◽  
Carbon Dots ◽  
Visual Detection ◽  
Level Shift ◽  
Ph Responsive ◽  
Red Emission ◽  
The Real ◽  
Fermi Level Shift

The pH-responsive emission of R-CDs with H-aggregation and Fermi level shift has been applied in the real-time and visual detection of amines.

Contribution of the Fermi Level Shift to the Low Temperature Magnetoresistance in α-Si:H

1982 ◽  
Vol 113 (1) ◽  
pp. K39-K42 ◽  
Author(s):  
P. Kuivalainen ◽  
J. Heleskivi ◽  
M. Leppihalme
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Level Shift ◽  
Fermi Level Shift

Fermi Level Shift in Photoconductive Organic Pigment Films Measured by Kelvin Vibrating Capacitor Method

1995 ◽  
Vol 34 (Part 1, No. 7B) ◽  
pp. 3803-3807 ◽  
Author(s):  
Masahiro Hiramoto ◽  
Kiyoaki Ihara ◽  
Masaaki Yokoyama
Keyword(s):  
Fermi Level ◽  
Level Shift ◽  
Organic Pigment ◽  
Fermi Level Shift

High energy photon induced Fermi-level shift of Ba 0.5 Sr 0.5 TiO 3 thin films

2017 ◽  
Vol 639 ◽  
pp. 107-112 ◽  
Author(s):  
Surendra Singh Barala ◽  
Vijendra Singh Bhati ◽  
Mahesh Kumar
Keyword(s):  
Thin Films ◽  
Fermi Level ◽  
High Energy ◽  
Level Shift ◽  
High Energy Photon ◽  
Energy Photon ◽  
Fermi Level Shift

The Increased Response Time in Hydrogenated Microcrystalline Silicon - A Fermi Level Effect or a Structural Effect in a Grainy Material?

1996 ◽  
Vol 420 ◽  
Author(s):  
S. Grebner ◽  
P. Popovic ◽  
J. Furlan ◽  
Q. Gu ◽  
R. Schwarz
Keyword(s):  
Fermi Level ◽  
Structural Effect ◽  
Level Shift ◽  
Microcrystalline Silicon ◽  
One Dimensional ◽  
Fermi Level Shift ◽  
Multiple Trapping ◽  
Multiple Trapping Model ◽  
Simulation Based ◽  
Level Effect

AbstractThe typical photocurrent decay time τR in intrinsic prepared hydrogenated microcrystalline silicon (μc-Si:H) is around lms similar to its n-doped amorphous counterpart (a-Si:H:P). Depending on the crystalline fraction Xc, the μc-Si:H films show an activation energy near to or below 0.5eV. To find out if this analogy ofτR could be due to a Fermi level shift or to the grainy structure in gc-Si:H films, we have studied the behaviour of τR in doped a-Si:H and gc-Si:H films of different XC. One-dimensional numerical simulation based on the Multiple Trapping Model (MTM) can explain this increase in terms of a Fermi level shift towards the conduction band. On the other hand, detailed measurements for temperatures from 100 to 400 K point to carrier trapping in deep states, most probably located at grain boundaries.

DEPENDENCE OF THE GAP-RATIO ON THE FERMI LEVEL SHIFT IN A VAN HOVE SUPERCONDUCTOR

2000 ◽  
Vol 14 (19n20) ◽  
pp. 2127-2133
Author(s):  
S. KASKAMALAS ◽  
B. KRUNAVAKARN ◽  
S. YOKSAN
Keyword(s):  
Fermi Level ◽  
High Temperature Superconductivity ◽  
Bcs Theory ◽  
Level Shift ◽  
Zero Temperature ◽  
Fermi Level Shift ◽  
Gap Ratio ◽  
Close Proximity ◽  
Analytic Expressions ◽  
Van Hove Superconductor

To understand the origin of high temperature superconductivity model based on the close proximity of the Fermi level to a quasi-two-dimensional Van Hove Singularity (VHS) in the density of states has been suggested. Here we present our study of the dependence of the zero temperature gap to the critical temperature for s- and d-wave superconductors on the Fermi level shift (δ) from the VHS within the BCS theory. Exact numerical calculations for the s and d gap ratios are carried out and approximate analytic expressions for the ratio are given. We find that the maximum gap ratio occurs at δ=0, and it decreases symmetrically with increasing δ.

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