Development of high-performance fully depleted silicon-on-insulator based extended-gate field-effect transistor using the parasitic bipolar junction transistor effect

An Analytical Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering the Effects of Self-Heating, Source/Drain Resistance, Impact-Ionization, and Parasitic Bipolar Junction Transistor

10.1143/jjap.36.2606 ◽

1997 ◽

Vol 36 (Part 1, No. 5A) ◽

pp. 2606-2613 ◽

Cited By ~ 8

Author(s):

Man-Chun Hu ◽

Sheng-Lyang Jang ◽

Young-Shying Chen ◽

Shau-Shen Liu ◽

Jien-Min Lin

Keyword(s):

Field Effect Transistor ◽

Impact Ionization ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Bipolar Junction Transistor ◽

Heating Source ◽

Junction Transistor ◽

Transistor Model ◽

Fabrication of high-performance fully depleted silicon-on-insulator based dual-gate ion-sensitive field-effect transistor beyond the Nernstian limit

Applied Physics Letters ◽

10.1063/1.3685497 ◽

2012 ◽

Vol 100 (7) ◽

pp. 073701 ◽

Cited By ~ 37

Author(s):

Hyun-June Jang ◽

Won-Ju Cho

Keyword(s):

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Fully Depleted ◽

Dual Gate ◽

Using Miller’s Theorem and Dominant Poles to Accurately Determine Field Effect Transistor and Bipolar Junction Transistor Small Signal and SPICE Capacitor Values

10.18260/1-2--22711 ◽

2020 ◽

Author(s):

Ernest Kim ◽

Thomas Schubert

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Small Signal ◽

Bipolar Junction Transistor ◽

Junction Transistor ◽

Comprehensive analysis of low-frequency noise variability components in bulk and fully depleted silicon-on-insulator metal–oxide–semiconductor field-effect transistor

10.7567/jjap.57.04fd19 ◽

2018 ◽

Vol 57 (4S) ◽

pp. 04FD19 ◽

Cited By ~ 1

Author(s):

Keiichi Maekawa ◽

Hideki Makiyama ◽

Yoshiki Yamamoto ◽

Takumi Hasegawa ◽

Shinobu Okanishi ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Comprehensive Analysis ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Fully Depleted ◽

On the high-field transport and its temperature dependence in deca-nanometer fully depleted silicon-on-insulator field-effect-transistor

Applied Physics Letters ◽

10.1063/1.3626849 ◽

2011 ◽

Vol 99 (9) ◽

pp. 092104

Author(s):

Masaharu Kobayashi ◽

Jin Cai ◽

Wilfried Haensch

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

High Field ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Fully Depleted ◽

PH3Ion Shower Implantation and Rapid Thermal Anneal with Oxide Capping and Its Application to Source and Drain Formation of a Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

10.1143/jjap.43.6943 ◽

2004 ◽

Vol 43 (10) ◽

pp. 6943-6947 ◽

Cited By ~ 2

Author(s):

Ki-Soo Kim ◽

Moon-Seok Yang ◽

Joo-Kyung Song ◽

Sang-Hyun Hong ◽

Ohyun Kim

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Rapid Thermal Anneal ◽

Fully Depleted ◽

A Simple, Analytical and Complete Deep-Submicrometer Fully Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering Velocity Overshoot

10.1143/jjap.36.1015 ◽

1997 ◽

Vol 36 (Part 1, No. 3A) ◽

pp. 1015-1024 ◽

Cited By ~ 2

Author(s):

Sheng-Lyang Jang ◽

Man-Chun Hu ◽

Shau-Shen Liu ◽

Young-Shying Chen

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Velocity Overshoot ◽

Fully Depleted ◽

Deep Submicrometer ◽

Transistor Model ◽

Complete Surface-Potential-Based Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model for Circuit Simulation

10.1143/jjap.43.2166 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 2166-2169 ◽

Cited By ~ 9

Author(s):

Daisuke Kitamaru ◽

Yasuhito Uetsuji ◽

Norio Sadachika ◽

Mitiko Miura-Mattausch

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Circuit Simulation ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Transistor Model ◽

Extraction of Front and Buried Oxide Interface Trap Densities in Fully Depleted Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor

ECS Solid State Letters ◽

10.1149/2.001305ssl ◽

2013 ◽

Vol 2 (5) ◽

pp. Q32-Q34 ◽

Cited By ~ 4

Author(s):

J.-Y. Cheng ◽

C. W. Yeung ◽

C. Hu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Interface Trap ◽

Oxide Interface ◽

Fully Depleted ◽

High-Performance Silicon-on-Insulator Based Dual-Gate Ion-Sensitive Field Effect Transistor with Flexible Polyimide Substrate-based Extended Gate

Journal of the Korean Institute of Electrical and Electronic Material Engineers ◽

10.4313/jkem.2015.28.11.698 ◽

2015 ◽

Vol 28 (11) ◽

pp. 698-703

Author(s):

Cheol-Min Lim ◽

Won-Ju Cho

Keyword(s):

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Polyimide Substrate ◽

Dual Gate ◽