Comprehensive analysis of low-frequency noise variability components in bulk and fully depleted silicon-on-insulator metal–oxide–semiconductor field-effect transistor

Keiichi Maekawa; Hideki Makiyama; Yoshiki Yamamoto; Takumi Hasegawa; Shinobu Okanishi; Kenichiro Sonoda; Hiroki Shinkawata; Tomohiro Yamashita; Shiro Kamohara; Yasuo Yamaguchi

doi:10.7567/jjap.57.04fd19

Comprehensive analysis of low-frequency noise variability components in bulk and fully depleted silicon-on-insulator metal–oxide–semiconductor field-effect transistor

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.04fd19 ◽

2018 ◽

Vol 57 (4S) ◽

pp. 04FD19 ◽

Cited By ~ 1

Author(s):

Keiichi Maekawa ◽

Hideki Makiyama ◽

Yoshiki Yamamoto ◽

Takumi Hasegawa ◽

Shinobu Okanishi ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Comprehensive Analysis ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Fully Depleted ◽

Effect Transistor

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Modeling of low-frequency noise in metal-oxide-semiconductor field-effect transistor with electron trapping-detrapping at oxide-silicon interface

IEEE Transactions on Electron Devices ◽

10.1109/16.119029 ◽

1991 ◽

Vol 38 (8) ◽

pp. 1883-1888 ◽

Cited By ~ 6

Author(s):

H. Wong ◽

Y.C. Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electron Trapping ◽

Frequency Noise ◽

Effect Transistor ◽

Silicon Interface

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Studies on Metal–Oxide–Semiconductor Field-Effect Transistor Low-Frequency Noise for Electrometer Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3606 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3606-3608 ◽

Cited By ~ 3

Author(s):

Nicolas Clement ◽

Hiroshi Inokawa ◽

Yukinori Ono

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Effect Transistor

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PH3Ion Shower Implantation and Rapid Thermal Anneal with Oxide Capping and Its Application to Source and Drain Formation of a Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.6943 ◽

2004 ◽

Vol 43 (10) ◽

pp. 6943-6947 ◽

Cited By ~ 2

Author(s):

Ki-Soo Kim ◽

Moon-Seok Yang ◽

Joo-Kyung Song ◽

Sang-Hyun Hong ◽

Ohyun Kim

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Rapid Thermal Anneal ◽

Fully Depleted ◽

Effect Transistor

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A Simple, Analytical and Complete Deep-Submicrometer Fully Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering Velocity Overshoot

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.1015 ◽

1997 ◽

Vol 36 (Part 1, No. 3A) ◽

pp. 1015-1024 ◽

Cited By ~ 2

Author(s):

Sheng-Lyang Jang ◽

Man-Chun Hu ◽

Shau-Shen Liu ◽

Young-Shying Chen

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Velocity Overshoot ◽

Fully Depleted ◽

Deep Submicrometer ◽

Transistor Model ◽

Effect Transistor

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Complete Surface-Potential-Based Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model for Circuit Simulation

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.2166 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 2166-2169 ◽

Cited By ~ 9

Author(s):

Daisuke Kitamaru ◽

Yasuhito Uetsuji ◽

Norio Sadachika ◽

Mitiko Miura-Mattausch

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Circuit Simulation ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Transistor Model ◽

Effect Transistor

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Extraction of Front and Buried Oxide Interface Trap Densities in Fully Depleted Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor

ECS Solid State Letters ◽

10.1149/2.001305ssl ◽

2013 ◽

Vol 2 (5) ◽

pp. Q32-Q34 ◽

Cited By ~ 4

Author(s):

J.-Y. Cheng ◽

C. W. Yeung ◽

C. Hu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Interface Trap ◽

Oxide Interface ◽

Fully Depleted ◽

Effect Transistor

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Two-Dimensional Analytical Modeling of Fully Depleted Short-Channel Dual-Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.104501 ◽

2009 ◽

Vol 48 (10) ◽

pp. 104501 ◽

Cited By ~ 2

Author(s):

Mohammad Kazem Anvarifard ◽

Seyed Ebrahim Hosseini ◽

Mahdi Gordi Armaki

Keyword(s):

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted ◽

Dual Gate ◽

Effect Transistor

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Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3002732 ◽

2020 ◽

Vol 67 (8) ◽

pp. 3062-3068 ◽

Cited By ~ 2

Author(s):

K. Takakura ◽

V. Putcha ◽

E. Simoen ◽

A. R. Alian ◽

U. Peralagu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Effect Transistor

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Degradation of low frequency noise in SiGe- and SiGeC-surface channel p-type metal-oxide-semiconductor field effect transistor due to consuming the Si cap

Applied Physics Letters ◽

10.1063/1.2819071 ◽

2007 ◽

Vol 91 (23) ◽

pp. 233505 ◽

Cited By ~ 4

Author(s):

R. Yang ◽

Y. Z. Xiong ◽

W. Y. Loh ◽

J. D. Ye ◽

M. B. Yu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Effect Transistor ◽

P Type

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Low Frequency Noise Characterization in Metal Oxide Semiconductor Field Effect Transistor Based Charge Transfer Device at Room and Low Temperatures

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.034203 ◽

2010 ◽

Vol 49 (3) ◽

pp. 034203 ◽

Cited By ~ 1

Author(s):

Vipul Singh ◽

Hiroshi Inokawa ◽

Tetsuo Endoh ◽

Hiroaki Satoh

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Effect Transistor ◽

Charge Transfer Device ◽

Noise Characterization ◽

Transfer Device

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