An Analytical Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering the Effects of Self-Heating, Source/Drain Resistance, Impact-Ionization, and Parasitic Bipolar Junction Transistor

Man-Chun Hu; Sheng-Lyang Jang; Young-Shying Chen; Shau-Shen Liu; Jien-Min Lin

doi:10.1143/jjap.36.2606

An Analytical Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering the Effects of Self-Heating, Source/Drain Resistance, Impact-Ionization, and Parasitic Bipolar Junction Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.2606 ◽

1997 ◽

Vol 36 (Part 1, No. 5A) ◽

pp. 2606-2613 ◽

Cited By ~ 8

Author(s):

Man-Chun Hu ◽

Sheng-Lyang Jang ◽

Young-Shying Chen ◽

Shau-Shen Liu ◽

Jien-Min Lin

Keyword(s):

Field Effect Transistor ◽

Impact Ionization ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Bipolar Junction Transistor ◽

Heating Source ◽

Junction Transistor ◽

Transistor Model ◽

Effect Transistor

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A Simple, Analytical and Complete Deep-Submicrometer Fully Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering Velocity Overshoot

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.1015 ◽

1997 ◽

Vol 36 (Part 1, No. 3A) ◽

pp. 1015-1024 ◽

Cited By ~ 2

Author(s):

Sheng-Lyang Jang ◽

Man-Chun Hu ◽

Shau-Shen Liu ◽

Young-Shying Chen

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Velocity Overshoot ◽

Fully Depleted ◽

Deep Submicrometer ◽

Transistor Model ◽

Effect Transistor

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Complete Surface-Potential-Based Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model for Circuit Simulation

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.2166 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 2166-2169 ◽

Cited By ~ 9

Author(s):

Daisuke Kitamaru ◽

Yasuhito Uetsuji ◽

Norio Sadachika ◽

Mitiko Miura-Mattausch

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Circuit Simulation ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Transistor Model ◽

Effect Transistor

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Development of high-performance fully depleted silicon-on-insulator based extended-gate field-effect transistor using the parasitic bipolar junction transistor effect

Applied Physics Letters ◽

10.1063/1.4757000 ◽

2012 ◽

Vol 101 (13) ◽

pp. 133703 ◽

Cited By ~ 2

Author(s):

Jin-Kwon Park ◽

Won-Ju Cho

Keyword(s):

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Fully Depleted ◽

Bipolar Junction Transistor ◽

Junction Transistor ◽

Effect Transistor

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Comprehensive analysis of low-frequency noise variability components in bulk and fully depleted silicon-on-insulator metal–oxide–semiconductor field-effect transistor

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.04fd19 ◽

2018 ◽

Vol 57 (4S) ◽

pp. 04FD19 ◽

Cited By ~ 1

Author(s):

Keiichi Maekawa ◽

Hideki Makiyama ◽

Yoshiki Yamamoto ◽

Takumi Hasegawa ◽

Shinobu Okanishi ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Comprehensive Analysis ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Fully Depleted ◽

Effect Transistor

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PH3Ion Shower Implantation and Rapid Thermal Anneal with Oxide Capping and Its Application to Source and Drain Formation of a Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.6943 ◽

2004 ◽

Vol 43 (10) ◽

pp. 6943-6947 ◽

Cited By ~ 2

Author(s):

Ki-Soo Kim ◽

Moon-Seok Yang ◽

Joo-Kyung Song ◽

Sang-Hyun Hong ◽

Ohyun Kim

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Rapid Thermal Anneal ◽

Fully Depleted ◽

Effect Transistor

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Extraction of Front and Buried Oxide Interface Trap Densities in Fully Depleted Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor

ECS Solid State Letters ◽

10.1149/2.001305ssl ◽

2013 ◽

Vol 2 (5) ◽

pp. Q32-Q34 ◽

Cited By ~ 4

Author(s):

J.-Y. Cheng ◽

C. W. Yeung ◽

C. Hu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Interface Trap ◽

Oxide Interface ◽

Fully Depleted ◽

Effect Transistor

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Two-Dimensional Analytical Modeling of Fully Depleted Short-Channel Dual-Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.104501 ◽

2009 ◽

Vol 48 (10) ◽

pp. 104501 ◽

Cited By ~ 2

Author(s):

Mohammad Kazem Anvarifard ◽

Seyed Ebrahim Hosseini ◽

Mahdi Gordi Armaki

Keyword(s):

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted ◽

Dual Gate ◽

Effect Transistor

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Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor

Acta Physica Sinica ◽

10.7498/aps.62.108501 ◽

2013 ◽

Vol 62 (10) ◽

pp. 108501

Author(s):

Xin Yan-Hui ◽

Liu Hong-Xia ◽

Fan Xiao-Jiao ◽

Zhuo Qing-Qing

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Strained Si ◽

Fully Depleted ◽

Effect Transistor

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An Analytical Symmetric Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.6250 ◽

1997 ◽

Vol 36 (Part 1, No. 10) ◽

pp. 6250-6253 ◽

Cited By ~ 1

Author(s):

Sheng-Lyang Jang ◽

Man-Chun Hu ◽

Shau-Shen Liu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Transistor Model ◽

Effect Transistor

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A Novel Step-Doping Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor for Reliable Deep Sub-micron Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.114503 ◽

2009 ◽

Vol 48 (11) ◽

pp. 114503 ◽

Cited By ~ 2

Author(s):

Hossein Elahipanah ◽

Ali A. Orouji

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Effect Transistor

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