Simulation of electrical characteristics in negative capacitance surrounding-gate ferroelectric field-effect transistors

2012 ◽  
Vol 101 (25) ◽  
pp. 253511 ◽  
Author(s):  
Y. G. Xiao ◽  
Z. J. Chen ◽  
M. H. Tang ◽  
Z. H. Tang ◽  
S. A. Yan ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Negative Capacitance ◽  
Electrical Characteristics ◽  
Surrounding Gate

Temperature effect on electrical characteristics of negative capacitance ferroelectric field-effect transistors

2012 ◽  
Vol 100 (8) ◽  
pp. 083508 ◽  
Author(s):  
Y. G. Xiao ◽  
M. H. Tang ◽  
J. C. Li ◽  
C. P. Cheng ◽  
B. Jiang ◽  
...  
Keyword(s):  
Temperature Effect ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Negative Capacitance ◽  
Electrical Characteristics

Photoswitchable organic field-effect transistors and memory elements comprising an interfacial photochromic layer

2015 ◽  
Vol 51 (28) ◽  
pp. 6130-6132 ◽  
Author(s):  
Lyubov A. Frolova ◽  
Pavel A. Troshin ◽  
Diana K. Susarova ◽  
Alexander V. Kulikov ◽  
Nataliya A. Sanina ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Memory Devices ◽  
Electrical Characteristics ◽  
Organic Field Effect Transistors

Memory devices with superior electrical characteristics were designed using an interfacial spirooxazine layer introduced between dielectric and semiconductor layers in OFETs.

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