Use of negative capacitance to simulate the electrical characteristics in double-gate ferroelectric field-effect transistors
2012 ◽
Vol 12
(6)
◽
pp. 1591-1595
◽
Keyword(s):
2012 ◽
Vol 52
(4)
◽
pp. 757-760
◽
2016 ◽
Vol 2
(4)
◽
pp. 1500467
◽
Keyword(s):
2016 ◽
Vol 63
(8)
◽
pp. 3291-3299
◽
Keyword(s):
2015 ◽
Vol 48
(36)
◽
pp. 365103
◽
Keyword(s):
Keyword(s):
Keyword(s):