Large-area ultraviolet GaN-based photonic quasicrystal laser with high-efficiency green color emission of semipolar {10-11} In0.3Ga0.7N/GaN multiple quantum wells

Abstract In this study, we demonstrated large-area high quality multi-color emission from the 12-fold symmetric GaN photonic quasicrystal nanorod device which was fabricated using the nanoimprint lithography technology and multiple quantum wells regrowth procedure. High-efficiency blue and green color emission wavelengths of 460 and 520 nm from the regrown InxGa1−xN/GaN multiple quantum wells were observed under optical pumping conditions. To confirm the strongly coupling between the quantum well emissions and the photonic crystal band-edge resonant modes, the finite-element method (FEM) was applied to perform a simulation of the 12-fold symmetry photonic quasicrystal lattices.

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Multicolor Emission from Ultraviolet GaN-Based Photonic Quasicrystal Nanopyramid Structure with Semipolar InxGa1−xN/GaN Multiple Quantum Wells

Nanoscale Research Letters ◽

10.1186/s11671-021-03576-1 ◽

2021 ◽

Vol 16 (1) ◽

Author(s):

Cheng-Chang Chen ◽

Hsiang-Ting Lin ◽

Shih-Pang Chang ◽

Hao-Chung Kuo ◽

Hsiao-Wen Hung ◽

...

Keyword(s):

Quantum Wells ◽

Nanoimprint Lithography ◽

Optical Pumping ◽

High Efficiency ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Large Area ◽

Resonant Modes ◽

Color Emission ◽

Photonic Quasicrystal

AbstractIn this study, we demonstrated large-area high-quality multi-color emission from the 12-fold symmetric GaN photonic quasicrystal nanorod device which was fabricated using the nanoimprint lithography technology and multiple quantum wells regrowth procedure. High-efficiency blue and green color emission wavelengths of 460 and 520 nm from the regrown InxGa1−xN/GaN multiple quantum wells were observed under optical pumping conditions. To confirm the strong coupling between the quantum well emissions and the photonic crystal band-edge resonant modes, the finite-element method was applied to perform a simulation of the 12-fold symmetry photonic quasicrystal lattices.

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High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on c-Al2O3

Applied Physics Express ◽

10.7567/apex.11.091003 ◽

2018 ◽

Vol 11 (9) ◽

pp. 091003 ◽

Cited By ~ 11

Author(s):

Valentin N. Jmerik ◽

Dmitrii V. Nechaev ◽

Alexey A. Toropov ◽

Evgenii A. Evropeitsev ◽

Vladimir I. Kozlovsky ◽

...

Keyword(s):

Electron Beam ◽

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

High Efficiency ◽

Multiple Quantum Wells ◽

Multiple Quantum

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Development of High Power, Large Area, Deep Ultraviolet Light Emitting Devices Using Dynamic Microplasma Excitation (MIPE) of AlGaN Multiple Quantum Wells

Electronics and Communications in Japan ◽

10.1002/ecj.11768 ◽

2016 ◽

Vol 99 (7) ◽

pp. 3-11 ◽

Cited By ~ 1

Author(s):

NORIKO KUROSE ◽

YOSHINOBU AOYAGI

Keyword(s):

Quantum Wells ◽

Ultraviolet Light ◽

High Power ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Large Area ◽

Light Emitting ◽

Light Emitting Devices ◽

Deep Ultraviolet

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Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates

CrystEngComm ◽

10.1039/d0ce01491e ◽

2020 ◽

Author(s):

Yuanhao Sun ◽

Fujun Xu ◽

Na Zhang ◽

Jing Lang ◽

Jiaming Wang ◽

...

Keyword(s):

Critical Temperature ◽

Quantum Wells ◽

High Efficiency ◽

Growth Conditions ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Sapphire Substrates ◽

Patterned Sapphire Substrates

Growth of AlGaN-based multiple quantum wells (MQWs) has been attempted on nano-patterned sapphire substrates (NPSSs). By adopting a critical-temperature approach and optimizing the growth conditions of V/III ratio and Si...

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