Hydrogen plasma treatments for passivation of amorphous-crystalline silicon-heterojunctions on surfaces promoting epitaxy

ABSTRACTHydrogen plasma treatments applied on standard Czochralski silicon (Cz Si) wafers cause a structuring of the surface regions on the sub-100 nm scale, i.e. a thin ‘nano-structured’ Si layer is created up to a depth of ∼ 150 nm. The formation of the ‘nano-structures’ and their evolution in dependence on the process conditions was studied. The impact of post-hydrogenation annealing on the morphology of the structural defects was studied up to 1200 °C. The H-plasma treated and annealed samples were analyzed at surface and sub-surface regions by scanning electron microscopy (SEM), atomic force microscopy (AFM), and μ-Raman spectroscopy.

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Electrical characterization ofn‐amorphous/p‐crystalline silicon heterojunctions

Journal of Applied Physics ◽

10.1063/1.362526 ◽

1996 ◽

Vol 79 (11) ◽

pp. 8493-8497 ◽

Cited By ~ 46

Author(s):

L. F. Marsal ◽

J. Pallarès ◽

X. Correig ◽

J. Calderer ◽

R. Alcubilla

Keyword(s):

Crystalline Silicon ◽

Electrical Characterization ◽

Silicon Heterojunctions

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High-bias current voltage temperature characteristics of undoped rf magnetron sputter deposited boron carbide (B5C)/p-type crystalline silicon heterojunctions

Semiconductor Science and Technology ◽

10.1088/0268-1242/18/1/302 ◽

2002 ◽

Vol 18 (1) ◽

pp. 7-22 ◽

Cited By ~ 35

Author(s):

M M Abdul-Gader Jafar

Keyword(s):

Boron Carbide ◽

Crystalline Silicon ◽

Bias Current ◽

Current Voltage ◽

High Bias ◽

Rf Magnetron Sputter ◽

Magnetron Sputter ◽

Silicon Heterojunctions ◽

Sputter Deposited ◽

P Type

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The Impact of Hydrogen Plasma Treatments at Moderate Temperatures on Sintered Zinc Oxide Samples - Evidence for Hydrogen Induced Nano-Void Formation

MRS Proceedings ◽

10.1557/proc-0957-k10-40 ◽

2006 ◽

Vol 957 ◽

Cited By ~ 1

Author(s):

Reinhart Job

Keyword(s):

Zinc Oxide ◽

Oxygen Vacancies ◽

Hydrogen Plasma ◽

Void Formation ◽

Vibration Modes ◽

Plasma Exposure ◽

Plasma Treatments ◽

The Impact ◽

Substrate Temperatures ◽

Defect Species

ABSTRACTUsing μ-Raman spectroscopy (μRS) analyses, the impact of hydrogen plasma treatments on sintered zinc oxide (ZnO) samples was investigated. H-plasma exposures (150 W, 13.56 MHz) were carried out for 1 hour at substrate temperatures between 250 °C and 500 °C. μRS reveals that plasma hydrogenated ZnO samples are more defective than non-treated ones. On one hand non-specified defect species are created with a maximal density upon plasma hydrogenation at 350 °C, on the other hand the formation of oxygen vacancies (VO) can be traced. The density of VO defects, appearing upon H-plasma exposure, is not significantly correlated to the applied substrate temperatures. μRS also reveals vibration modes of H2 molecules trapped in nano-voids. The μRS results indicate that those nano-voids are created by the coalescence of VO defects.

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