Atomic layer doping of strained Ge-on-insulator thin films with high electron densities

2013 ◽  
Vol 102 (15) ◽  
pp. 151103 ◽  
Author(s):  
W. M. Klesse ◽  
G. Scappucci ◽  
G. Capellini ◽  
J. M. Hartmann ◽  
M. Y. Simmons
Keyword(s):  
Thin Films ◽  
Atomic Layer ◽  
High Electron ◽  
Electron Densities

scholarly journals Atomic Layer Deposition of InN Using Trimethylindium and Ammonia Plasma

2018 ◽  
Author(s):  
Petro Deminskyi ◽  
Polla Rouf ◽  
Ivan G. Ivanov ◽  
Henrik Pedersen
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Film Deposition ◽  
High Electron ◽  
Low Carbon ◽  
Carbon Level ◽  
Ammonia Plasma ◽  
Layer Deposition ◽  
Film Bulk

<div>InN is a low band gap, high electron mobility semiconductor material of interest to optoelectronics and telecommunication. Such applications require the deposition of uniform crystalline InN thin films on large area substrates, with deposition temperatures compatible with this temperature-sensitive material. As conventional chemical vapor deposition (CVD) struggles with the low temperature tolerated by the InN crystal, we hypothesize that a time-resolved, surface-controlled CVD route could offer a way</div><div>forward for InN thin film deposition. In this work, we report atomic layer deposition of crystalline, wurtzite InN thin films using trimethylindium and ammonia plasma on Si (100). We found a narrow ALD window of 240–260 °C with a deposition rate of 0.36 Å/cycle and that the flow of ammonia into the plasma is an important parameter for the crystalline quality of the film. X-ray photoelectron spectroscopy measurements shows nearly stoichiometric InN with low carbon level (< 1 atomic %) and oxygen level (< 5 atomic %) in the film bulk. The low carbon level is attributed to a favorable surface chemistry enabled by the NH<sub>3</sub> plasma. The film bulk oxygen content is attributed to oxidation upon exposure to air via grain boundary diffusion and possibly by formation of oxygen containing species in the plasma discharge.</div>

An Oxygen Radical Source with High Electron Densities for Preparation of YBCO Thin Films

1993 ◽  
pp. 961-964
Author(s):  
Takeshi Suzuki ◽  
Toshiyuki Matsui ◽  
Akihiko Ohi ◽  
Takashi Ishi ◽  
Hiroshi Kimura ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Radical ◽  
High Electron ◽  
Electron Densities ◽  
Ybco Thin Films

scholarly journals Atomic Layer Deposition of InN Using Trimethylindium and Ammonia Plasma

2019 ◽  
Author(s):  
Petro Deminskyi ◽  
Polla Rouf ◽  
Ivan G. Ivanov ◽  
Henrik Pedersen
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Film Deposition ◽  
High Electron ◽  
Low Carbon ◽  
Carbon Level ◽  
Ammonia Plasma ◽  
Layer Deposition ◽  
Film Bulk

<div>InN is a low band gap, high electron mobility semiconductor material of interest to optoelectronics and telecommunication. Such applications require the deposition of uniform crystalline InN thin films on large area substrates, with deposition temperatures compatible with this temperature-sensitive material. As conventional chemical vapor deposition (CVD) struggles with the low temperature tolerated by the InN crystal, we hypothesize that a time-resolved, surface-controlled CVD route could offer a way</div><div>forward for InN thin film deposition. In this work, we report atomic layer deposition of crystalline, wurtzite InN thin films using trimethylindium and ammonia plasma on Si (100). We found a narrow ALD window of 240–260 °C with a deposition rate of 0.36 Å/cycle and that the flow of ammonia into the plasma is an important parameter for the crystalline quality of the film. X-ray photoelectron spectroscopy measurements shows nearly stoichiometric InN with low carbon level (< 1 atomic %) and oxygen level (< 5 atomic %) in the film bulk. The low carbon level is attributed to a favorable surface chemistry enabled by the NH<sub>3</sub> plasma. The film bulk oxygen content is attributed to oxidation upon exposure to air via grain boundary diffusion and possibly by formation of oxygen containing species in the plasma discharge.</div>

scholarly journals Atomic Layer Deposition of Inn Using Trimethylindium and Ammonia Plasma

2018 ◽  
Author(s):  
Petro Deminskyi ◽  
Polla Rouf ◽  
Ivan G. Ivanov ◽  
Henrik Pedersen
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Film Deposition ◽  
High Electron ◽  
Low Carbon ◽  
Carbon Level ◽  
Ammonia Plasma ◽  
Layer Deposition ◽  
Film Bulk

<div>InN is a low band gap, high electron mobility semiconductor material of interest to optoelectronics and telecommunication. Such applications require the deposition of uniform crystalline InN thin films on large area substrates, with deposition temperatures compatible with this temperature-sensitive material. As conventional chemical vapor deposition (CVD) struggles with the low temperature tolerated by the InN crystal, we hypothesize that a time-resolved, surface-controlled CVD route could offer a way</div><div>forward for InN thin film deposition. In this work, we report atomic layer deposition of crystalline, wurtzite InN thin films using trimethylindium and ammonia plasma on Si (100). We found a narrow ALD window of 240–260 °C with a deposition rate of 0.36 Å/cycle and that the flow of ammonia into the plasma is an important parameter for the crystalline quality of the film. X-ray photoelectron spectroscopy measurements shows nearly stoichiometric InN with low carbon level (< 1 atomic %) and oxygen level (< 5 atomic %) in the film bulk. The low carbon level is attributed to a favorable surface chemistry enabled by the NH<sub>3</sub> plasma. The film bulk oxygen content is attributed to oxidation upon exposure to air via grain boundary diffusion and possibly by formation of oxygen containing species in the plasma discharge.</div>

scholarly journals Electrochemical Atomic Layer Deposition (EC-ALD) Low Cost Synthesis of Engineered Materials a Short Review

2018 ◽  
Vol 2 (1) ◽  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Communication Systems ◽  
Atomic Layer ◽  
Mass Scale ◽  
Silicon Compound ◽  
Scale Production ◽  
High Electron ◽  
Electron Hole ◽  
Layer Deposition

Having mastered the technology of epitaxial deposition of crystalline thin films (i.e. homo and heteroepitaxy) on crystalline substrates has already been found providing better device designs with numerous advantages in the development of microelectronics devices and circuits. Consequently, mass-scale production of epitaxial thin films could successfully be developed and used in fabricating discrete devices and integrated circuits (ICs) using silicon/compound semiconductors commercially. Especially, realizing the hetero-epitaxial interfaces possessing two-dimensional electron/hole gas (2DEG/2DHG) sheets could offer very-high electron/hole mobilities for producing high-electronmobility transistors (HEMTs) and amplifiers for microwave/millimeter-wave communication systems. However, the major limitation of this technology was its requirement of extremely high cost infrastructures. Subsequently, the rising demands of the technologies to produce large-size displays/electronics systems, and large-numbers of sensors/ actuators in Internet of Thing (IoT) made it imminent for the researchers to explore replacing the existing cost intensive technologies by more affordable ones. In such an endeavor, developing a simpler and alternate epitaxial technology became imminent to look for. Incidentally, electrodeposition based epitaxy attracted the attention of the researchers by employing potentiostatic set-up for understanding the growth kinetics of the ionic species involved. While going through these studies, starting with the deposition of metallic/semiconducting thin films, atomic-layer epitaxial depositions could be successfully made and named as electrochemical atomic layer deposition (EC-ALD). Despite numerous attempts made for almost two decades in this fascinating field the related technology is not yet ready for its commercial exploitations. Some of the salient features of this process (i.e. commonly known as EC-ALD or EC-ALE) are examined here with recent results along with future prospects. Indexing Terms: Vapor Phase Epitaxy (VPE), Liquid Phase Epitaxy (LPE), Atomic Layer Deposition, Atomic Layer Epitaxy (ALE), and Molecular Beam Epitaxy (MBE); Electrochemical Atomic Layer Deposition (EC-ALD)

scholarly journals Atomic Layer Deposition of InN Using Trimethylindium and Ammonia Plasma

2019 ◽  
Author(s):  
Petro Deminskyi ◽  
Polla Rouf ◽  
Ivan G. Ivanov ◽  
Henrik Pedersen
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Film Deposition ◽  
High Electron ◽  
Low Carbon ◽  
Carbon Level ◽  
Ammonia Plasma ◽  
Layer Deposition ◽  
Film Bulk

<div>InN is a low band gap, high electron mobility semiconductor material of interest to optoelectronics and telecommunication. Such applications require the deposition of uniform crystalline InN thin films on large area substrates, with deposition temperatures compatible with this temperature-sensitive material. As conventional chemical vapor deposition (CVD) struggles with the low temperature tolerated by the InN crystal, we hypothesize that a time-resolved, surface-controlled CVD route could offer a way</div><div>forward for InN thin film deposition. In this work, we report atomic layer deposition of crystalline, wurtzite InN thin films using trimethylindium and ammonia plasma on Si (100). We found a narrow ALD window of 240–260 °C with a deposition rate of 0.36 Å/cycle and that the flow of ammonia into the plasma is an important parameter for the crystalline quality of the film. X-ray photoelectron spectroscopy measurements shows nearly stoichiometric InN with low carbon level (< 1 atomic %) and oxygen level (< 5 atomic %) in the film bulk. The low carbon level is attributed to a favorable surface chemistry enabled by the NH<sub>3</sub> plasma. The film bulk oxygen content is attributed to oxidation upon exposure to air via grain boundary diffusion and possibly by formation of oxygen containing species in the plasma discharge.</div>

scholarly journals On the Use of MOFs and ALD Layers as Nanomembranes for the Enhancement of Gas Sensors Selectivity

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1552 ◽  
Author(s):  
Weber ◽  
Graniel ◽  
Balme ◽  
Miele ◽  
Bechelany
Keyword(s):  
Thin Films ◽  
Gas Sensors ◽  
Gas Sensing ◽  
Metal Organic Frameworks ◽  
Atomic Layer ◽  
Operational Performance ◽  
Layer Deposition ◽  
Metal Organic ◽  
Further Development ◽  
Different Gases

Improving the selectivity of gas sensors is crucial for their further development. One effective route to enhance this key property of sensors is the use of selective nanomembrane materials. This work aims to present how metal-organic frameworks (MOFs) and thin films prepared by atomic layer deposition (ALD) can be applied as nanomembranes to separate different gases, and hence improve the selectivity of gas sensing devices. First, the fundamentals of the mechanisms and configuration of gas sensors will be given. A selected list of studies will then be presented to illustrate how MOFs and ALD materials can be implemented as nanomembranes and how they can be implemented to improve the operational performance of gas sensing devices. This review comprehensively shows the benefits of these novel selective nanomaterials and opens prospects for the sensing community.

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