Defect formation in the deposition of thin films for semiconductors is not yet sufficiently understood. In a showerhead-type capacitively coupled plasma (CCP) deposition reactor, the showerhead acts as both the gas distributor and the electrode. We used computational fluid dynamics to investigate ways to enhance cleanliness by analyzing the particle deposition induced by the showerhead electrode in a CCP reactor. We analyzed particle transport phenomena using a three-dimensional complex geometry, whereas SiH4/He discharges were simulated in a two-dimensional simplified geometry. The process volume was located between the RF-powered showerhead and the grounded heater. We demonstrated that the efficient transportation of particles with a radius exceeding 1 μm onto the heater is facilitated by acceleration inside the showerhead holes. Because the available space in which to flow inside the showerhead is constricted, high gas velocities within the showerhead holes can accelerate particles and lead to inertia-enhanced particle deposition. The effect of the electrode spacing on the deposition of particles generated in plasma discharges was also investigated. Smaller electrode spacing promoted the deposition of particles fed from the showerhead on the heater, whereas larger electrode spacing facilitated the deposition of particles generated in plasma discharges on the heater.
Computational Fluid Dynamics Analysis of Particle Deposition Induced by a Showerhead Electrode in a Capacitively Coupled Plasma Reactor