scholarly journals Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

AIP Advances ◽  
2013 ◽  
Vol 3 (11) ◽  
pp. 112116 ◽  
Author(s):  
Nazek El-Atab ◽  
Ayman Rizk ◽  
Ali K. Okyay ◽  
Ammar Nayfeh
Keyword(s):  
Zinc Oxide ◽  
Chromium Oxide ◽  
Charge Trapping ◽  
Memory Cell ◽  
Oxide Charge ◽  
Thin Chromium ◽  
Charge Trapping Memory

scholarly journals Low power zinc-oxide based charge trapping memory with embedded silicon nanoparticles via poole-frenkel hole emission

2014 ◽  
Vol 104 (1) ◽  
pp. 013112 ◽  
Author(s):  
Nazek El-Atab ◽  
Ayse Ozcan ◽  
Sabri Alkis ◽  
Ali K. Okyay ◽  
Ammar Nayfeh
Keyword(s):  
Zinc Oxide ◽  
Low Power ◽  
Silicon Nanoparticles ◽  
Charge Trapping ◽  
Charge Trapping Memory

Charge Trapping Memory Cell of TANOS (Oxide-SiN-Al2O3-TaN) Structure Erased by Fowler-Nordheim Tunneling of Holes

2006 ◽  
Vol 933 ◽  
Author(s):  
Chang-Hyun Lee ◽  
Changseok Kang ◽  
Yoocheol Shin ◽  
Jaesung Sim ◽  
Jongsun Sel ◽  
...  
Keyword(s):  
Energy Level ◽  
Threshold Voltage ◽  
Charge Trapping ◽  
Memory Cell ◽  
Floating Gate ◽  
Hole Trap ◽  
Hole Trapping ◽  
High K ◽  
Charge Trapping Memory ◽  
Nordheim Tunneling

ABSTRACTWe present the TANOS (Si-Oxide-SiN-Al2O3-TaN) cell with 40 Å-thick tunnel oxide erased by Fowler-Nordheim (FN) tunneling of hole. Thanks to introducing high-k dielectrics, alumina (Al2O3) as a blocking oxide, the erase threshold voltage can be maintained to less than - 3.0 V, meaning hole-trapping in SiN. We extracted the nitride trap densities of electron and hole for the TANOS cell. It is demonstrated that the TANOS structure is very available to investigate the trap density with shallower energy. The energy level of hole trap (1.28 eV) is found to be deeper than that of electron (0.8 eV). As the cycling stress is performed, persistent hole-trapping is observed unlike endurance characteristics of conventional floating-gate cell. The hole trapping during the cycling stress can be attributed to two possibilities. The injected holes are trapped in neutral trap of tunnel oxide and residue of holes which is not somewhat compensated by injected electrons may be accumulated in SiN. It is demonstrated the erase operation of the TANOS cell is governed by Fowler-Nordheim tunneling of hole due to the field concentration across the tunnel oxide.

Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium–Gallium–Zinc–Oxide Charge-Trapping Layer

2010 ◽  
Vol 31 (12) ◽  
pp. 1407-1409 ◽  
Author(s):  
Lun-Chun Chen ◽  
Yung-Chun Wu ◽  
Tien-Chun Lin ◽  
Jyun-Yang Huang ◽  
Min-Feng Hung ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Indium Gallium Zinc Oxide ◽  
Oxide Charge ◽  
Si Nanowire ◽  
Indium Gallium

scholarly journals Silicon nanoparticle charge trapping memory cell

2014 ◽  
Vol 8 (7) ◽  
pp. 629-633 ◽  
Author(s):  
Nazek El-Atab ◽  
Ayse Ozcan ◽  
Sabri Alkis ◽  
Ali K. Okyay ◽  
Ammar Nayfeh
Keyword(s):  
Charge Trapping ◽  
Memory Cell ◽  
Silicon Nanoparticle ◽  
Charge Trapping Memory

Total Ionization Dose Effects on Charge Storage Capability of Al 2 O 3 /HfO 2 /Al 2 O 3 -Based Charge Trapping Memory Cell

2018 ◽  
Vol 35 (11) ◽  
pp. 118501 ◽  
Author(s):  
Yan-Nan Xu ◽  
Jin-Shun Bi ◽  
Gao-Bo Xu ◽  
Bo Li ◽  
Kai Xi ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Cell ◽  
Charge Storage ◽  
Total Ionization ◽  
Dose Effects ◽  
Charge Trapping Memory
Sign in / Sign up

Export Citation Format

Share Document